Small LED source with high brightness and high efficiency

Patent metadata

Field	Value
Publication number	US-10084121-B2
Application number	US-201715661515-A
Country	US
Kind code	B2
Filing date	Jul 27, 2017
Priority date	Nov 4, 2013
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

Small LED sources with high brightness and high efficiency apparatus including the small LED sources and methods of using the small LED sources are disclosed.

First claim

What is claimed is:

1. A light source comprising: an LED die, wherein said LED die has a footprint with an area less than 250 μm×250 μm, and wherein said LED die comprises at least,
a semiconductor having bulk GaN substrate and an active region defining alight-emitting region;
at least one p-contact electrode disposed on one side of said semiconductor; and
an n-contact electrode having a first surface facing said semiconductor and a second surface facing away from said semiconductor, wherein said first surface is less than 20% of said area.

2. The light source of claim 1 , wherein said LED die has a-flip-chip configuration.

3. The light source of claim 1 , wherein said p-contact is disposed on one side of the semiconductor, and said n-contact is disposed on the opposite side of said semiconductor.

4. The light source of claim 1 , wherein said area is less than 50×50 um^2.

5. The light source of claim 1 , wherein said LED die further comprises sidewalls that are passivated.

6. The light source of claim 5 , wherein said sidewalls are passivated by a dielectric layer.

7. The light source of claim 1 , wherein said LED die is configured to operate at a current density higher than 100 A·cm−2.

8. The light source of claim 1 , wherein bulk GaN substrate has a thickness of at least 50 nm.

9. The light source of claim 1 , wherein said n-contact is disposed on the same side of said semiconductor light-emitting region as said p-contact.

10. A light source comprising: an LED die, wherein said LED die has a footprint with an area less than 250 μm×250 μm, and wherein said LED die comprises at least,
a semiconductor having a light-emitting region;
at least one p-contact electrode disposed on one side of said semiconductor; and
an n-contact electrode having a first surface facing said semiconductor and a second surface facing away from said semiconductor, wherein said first surface is less than 20% of said area, wherein said first surface is smaller than said second surface.

11. The light source of claim 10 , wherein said first surface is no more than ⅕ of said second surface.

12. The light source of claim 10 , wherein said n-contact is disposed on the same side of said semiconductor as said p-contact.

13. The light source of claim 12 , wherein a portion of said n-contact underlays at least a portion of said p-contact.

14. The light source of claim 13 , wherein a dielectric is disposed between said portion of said n-contact and said at least a portion of said p-contact.

15. The light source of claim 14 , wherein the n-electrode extends beyond said base for contacting.

16. The light source of claim 10 , wherein said LED die further comprises a substrate comprising bulk GaN.

17. The light source of claim 10 , wherein said LED die has a flip-chip configuration.

18. The light source of claim 10 , wherein said p-contact is disposed on one side of the semiconductor, and said n-contact is disposed on the opposite side of said semiconductor.

19. The light source of claim 10 , wherein said area is less than 50×50 um^2.

20. The light source of claim 10 , wherein said LED die further comprises sidewalls that are passivated.

Assignees

• Soraa Inc

Inventors

• David Aurelien J F
• Aldaz Rafael
• Krames Michael Ragan
• Steranka Frank M
• Huang Kevin
• Trottier Troy

Classifications

• H01L33/46

  Electricity · mapped topic

• H01L33/508 Primary

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title