Textured optoelectronic devices and associated methods of manufacture

Patent metadata

Field	Value
Publication number	US-10084114-B2
Application number	US-201615149740-A
Country	US
Kind code	B2
Filing date	May 9, 2016
Priority date	Jul 26, 2011
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

First claim

We claim:

1. An optoelectronic device, comprising:
an optoelectronic transducer having at least a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials;
a texturing material including titanium deposited over the optoelectronic transducer; and
a transparent conductive material on the texturing material, wherein the transparent conductive material has a plurality of protuberances projecting away from the texturing material.

2. The device of claim 1 wherein the transparent conductive material comprises indium tin oxide.

3. The device of claim 1 wherein the texturing material has a thickness from about 30 angstroms to about 60 angstroms.

4. The device of claim 1 , further comprising a mask deposited over at least a portion of the texturing material.

5. The device of claim 1 wherein the protuberances of the transparent conductive material comprise a plurality of irregular pillars in a random pattern across the optoelectronic transducer.

6. The device of claim 1 wherein the solid state optoelectronic transducer includes a N-type gallium nitride (GaN) material, an indium gallium nitride (InGaN) material over the N-type material, and a P-type GaN material over the InGaN material.

7. An optoelectronic device, comprising:
an optoelectronic transducer having a first semiconductor material, a second semiconductor material, and an active region positioned between the first and second semiconductor materials;
a texturing material positioned on the second semiconductor material;
a conductive material positioned on the texturing material and having a plurality of protuberances extending outwardly in a direction away from the texturing material, wherein the plurality of protuberances comprise a plurality of irregular pillars, wherein the conductive material is a first portion of conductive material;
a mask positioned on at least a portion of the texturing material; and
a second portion of conductive material positioned on the mask, wherein the first portion of the conductive material and the second portion of the conductive material form a pattern via absence and presence of the plurality of protuberances.

8. The optoelectronic device of claim 7 wherein the plurality of protuberances have a density, a size, a shape, an arrangement, or a combination thereof characteristic of a heating temperature used to grow the plurality of protuberances.

9. The optoelectronic device of claim 7 wherein the texturing material includes a plurality of ridges and valleys, and wherein the ridges and valleys define a pattern for the plurality of protuberances.

Assignees

• Micron Technology Inc

Inventors

• Xu Lifang
• Schellhammer Scott D
• Mou Shan Ming
• Bernhardt Michael J

Classifications

• H01L31/02363

  Electricity · mapped topic

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/02168

  Electricity · mapped topic

• H01L31/0236

  Electricity · mapped topic

• H01L33/58

  Electricity · mapped topic