Solar cell element and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10084100-B2
Application number	US-201113821821-A
Country	US
Kind code	B2
Filing date	Oct 4, 2011
Priority date	Oct 7, 2010
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

A solar cell element containing: a semiconductor substrate; an antireflection film disposed in a first region on one main surface of the semiconductor substrate; and a front surface electrode disposed in a second region on the one main surface of the semiconductor substrate and containing silver as a main component and a tellurium-based glass containing tellurium, tungsten, and bismuth. The solar cell element is manufactured by forming the antireflection film on the one main substrate surface; printing on the antireflection film a conductive paste containing a conductive powder mainly containing silver, a tellurium-based glass frit containing tellurium, tungsten, and bismuth, and an organic vehicle; and disposing the antireflection film in the first region and forming the front surface electrode in the second region, by firing the paste and eliminating the antireflection film positioned under the paste.

First claim

The invention claimed is:

1. A solar cell element, comprising:
a semiconductor substrate with a main surface having a texture structure in which projections having an average width and height of 2 μm or less are formed;
an antireflection film disposed in a first region on the main surface of the semiconductor substrate; and
a front surface electrode which is disposed in a second region on the main surface of the semiconductor substrate, comprises silver as a main component and contains a tellurium-based glass containing tellurium, tungsten, and bismuth as essential components, wherein the tellurium-based glass does not contain copper and comprises, in terms of oxide, tellurium in an amount of 50.0 to 70.0 mol %, tungsten in an amount of 19.0 to 40.0 mol %, and bismuth in an amount of 5.0 to 25.0 mol %, the sum of the tellurium, tungsten and bismuth, in terms of oxide, being at least 80 mol %, wherein
the semiconductor substrate is a multicrystalline silicon semiconductor substrate,
the front surface electrode has a plurality of finger electrodes, and
the finger electrodes essentially have no bleeding of the glass component from an outer rim thereof.

2. The solar cell element according to claim 1 , wherein the average width and average height of the projections are not less than 0.1 μm but not more than 1 μm.

3. The solar cell element according to claim 2 , wherein the projections have an average aspect ratio of 0.1 to 2.

Assignees

• Nakamura Masami
• Shindo Naoto
• Kanasaku Tadashi
• Atobe Junichi
• Shoei Chemical Ind Co
• Kyocera Corp

Inventors

• Nakamura Masami
• Shindo Naoto
• Kanasaku Tadashi
• Atobe Junichi

Classifications

• H01B1/22

  the conductive material comprising metals or alloys · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/02363

  Electricity · mapped topic

• H01L31/022425 Primary

  Electricity · mapped topic

• H01L31/18

  Electricity · mapped topic