Apparatus and method for FinFETs

Patent metadata

Field	Value
Publication number	US-10084069-B2
Application number	US-201715647820-A
Country	US
Kind code	B2
Filing date	Jul 12, 2017
Priority date	Mar 1, 2012
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.

First claim

What is claimed is:

1. A device comprising:
a first isolation region formed in a substrate, wherein the first isolation region has a first non-vertical sidewall;
a second isolation region formed in the substrate, wherein the second isolation region has a second non-vertical sidewall; and
a cloak-shaped active region comprising:
an upper portion protruding above a top surface of the first isolation region;
a first triangular portion extending into the first isolation region; and
a second triangular portion extending into the second isolation region.

2. The device of claim 1 , wherein the cloak-shaped active region comprises:
a source region;
a drain region;
a channel between the source region and the drain region; and
a gate stack on a top surface and sidewalls of the upper portion of the cloak-shaped active region.

3. The device of claim 1 , wherein the cloak-shaped active region further comprises a portion between the first isolation region and the second isolation region, and the portion of the cloak-shaped active region has a V-shaped bottom surface.

4. The device of claim 3 , wherein the V-shaped bottom surface comprises two portions forming an angle in a range between about 100 degrees and about 110 degrees.

5. The device of claim 3 , wherein bottom surfaces of the V-shape are connected to a bottom surface of the first triangular portion and a bottom surface of the second triangular portion.

6. The device of claim 1 , wherein the first triangular portion has a slanted sidewall contacting the first non-vertical sidewall of the first isolation region.

7. The device of claim 6 , wherein a bottom surface of the first triangular portion is slanted.

8. The device of claim 6 , wherein a bottom surface of the first triangular portion forms an angle with the slanted sidewall, and the angle is in a range between about 130 degrees and about 160 degrees.

9. A device comprising:
a semiconductor substrate;
a first isolation region extending into the semiconductor substrate;
a second isolation region extending into the semiconductor substrate; and
a semiconductor region between a first portion of the first isolation region and a first portion of the second isolation region, wherein the semiconductor region comprises a first slanted bottom surface and a second slanted bottom surface forming a V-shape in a cross-sectional view of the semiconductor region, and wherein the first slanted bottom surface and the second slanted bottom surface extend into the first isolation region and the second isolation region, respectively.

10. The device of claim 9 , wherein the V-shape has an angle between about 100 degrees and about 110 degrees.

11. The device of claim 9 , wherein the first isolation region further comprises a second portion overlapped by a portion of the semiconductor region.

12. The device of claim 9 , wherein the semiconductor region further comprises a substantially straight sidewall joined to the first slanted bottom surface of the semiconductor region.

13. The device of claim 12 , wherein the substantially straight sidewall and the first slanted bottom surface of the semiconductor region form an angle in a range between about 130 degrees and about 160 degrees.

14. The device of claim 12 , wherein the substantially straight sidewall of the semiconductor region continuously extends to be higher than top surfaces of the first isolation region and the second isolation region.

15. The device of claim 14 further comprising a gate dielectric contacting a portion of the semiconductor region higher than the top surfaces of the first isolation region and the second isolation region.

16. A device comprising:
a semiconductor substrate;
a first isolation region extending into the semiconductor substrate; and
a semiconductor region comprising:
a first slanted sidewall extending into the first isolation region 106 ; and
a slanted bottom surface extending into the first isolation region, wherein the first slanted sidewall is joined to the slanted bottom surface.

17. The device of claim 16 , wherein the first slanted sidewall is substantially straight.

18. The device of claim 17 , wherein the slanted bottom surface is substantially straight, and the slanted bottom surface continuously extends out of the first isolation region to contact a portion of the semiconductor substrate.

19. The device of claim 16 further comprising a second isolation region, wherein a portion of the semiconductor region is between the first isolation region and the second isolation region.

20. The device of claim 16 , wherein a top portion of the semiconductor region is higher than a top surface of the first isolation region, and the device further comprises:
a gate dielectric contacting the top portion of the semiconductor region; and
a gate electrode over the gate dielectric.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Yi-Jing
• Lin You-Ru
• Wan Cheng-Tien
• Wu Cheng-Hsien
• Ko Chih-Hsin

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title