Image sensor having pickup region

Patent metadata

Field	Value
Publication number	US-10084007-B2
Application number	US-201615173326-A
Country	US
Kind code	B2
Filing date	Jun 3, 2016
Priority date	Jan 11, 2016
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

The present invention provides an image sensor. An image sensor include a pixel array. The pixel array includes: a plurality of pixels; and an isolation structure suitable for insulating between the plurality of pixels. The isolation structure includes: a first conductivity-type conductive layer formed over a substrate; and a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between each plurality of pixels.

First claim

What is claimed is:

1. An image sensor comprising:
a plurality of unit pixel groups; and
an isolation structure suitable for insulating between the plurality of unit pixel groups,
wherein the isolation structure comprises:
a first conductivity-type conductive layer formed over a substrate; and
a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between two adjacent unit pixel groups,
wherein the first conductivity-type conductive layer comprises either a first conductivity-type well formed in the substrate, or a first conductivity-type epitaxial layer formed over the substrate.

2. The image sensor of claim 1 , wherein the isolation structure further comprises:
an element isolation layer formed over the first conductivity-type conductive layer and having a bottom surface in contact with the second conductivity-type pickup region; and
a plug formed through the element isolation layer and connected to the second conductivity-type pickup region.

3. The image sensor of claim 1 , wherein a positive voltage variable within a voltage range from a voltage higher than a ground voltage to a voltage equal to or lower than a supply voltage is applied to the second conductivity-type pickup region.

4. The image sensor of claim 1 , wherein when the plurality of unit pixel groups operate in a global shutter mode, a positive voltage is applied to the second conductivity-type pickup region during an integration time.

5. The image sensor of claim 1 , wherein when the plurality of unit pixel groups operate in a rolling shutter mode, a positive voltage is always applied to the second conductivity-type pickup region.

6. The image sensor of claim 1 , wherein each of the plurality of unit pixel groups comprises:
a light-receiving part comprising a plurality of photoelectric conversion elements suitable for generating photocharges in response to incident light and sharing a single floating diffusion region; and
an output part suitable for outputting an image signal corresponding to the photocharges generated in the light-receiving part.

7. The image sensor of claim 6 , wherein the second conductivity-type pickup region is disposed between two adjacent light-receiving parts.

8. An image sensor comprising:
a plurality of unit pixel groups; and
an isolation structure suitable for insulating between the plurality of unit pixel groups,
wherein the isolation structure comprises:
a first conductivity-type conductive layer formed over a substrate; and
a second conductivity-type pickup region formed in the first conductivity-type conductive layer and disposed between the plurality of unit pixel groups,
wherein the second conductivity-type pickup region has a dot shape.

9. An image sensor comprising:
a plurality of unit pixel groups;
an isolation structure suitable for insulating between the plurality of unit pixel groups; and
a first pickup region of a first conductivity-type formed in the isolation structure and disposed between two adjacent unit pixel groups,
wherein the isolation structure comprises:
a first conductivity-type conductive layer; and
a second pickup region of a second conductivity-type formed in the first conductivity-type conductive layer and disposed between two adjacent unit pixel groups,
wherein the first and second pickup regions have a dot shape.

10. The image sensor of claim 9 , wherein the isolation structure further comprises:
an element isolation layer formed over the first conductivity-type conductive layer and having a bottom surface in contact with the first and second pickup regions;
a first plug formed through the element isolation layer and connected to the first pickup region; and
a second plug formed through the element isolation layer and connected to the second pickup region.

11. The image sensor of claim 9 , wherein a positive voltage variable within a voltage range from a voltage higher than a ground voltage to a voltage equal to or lower than a supply voltage is applied to the second pickup region.

12. The image sensor of claim 9 , wherein when the plurality of unit pixel groups operate in a global shutter mode, a positive voltage is applied to the second pickup region during an integration time.

13. The image sensor of claim 9 , wherein when the plurality of unit pixel groups operate in a rolling shutter mode, a positive voltage is always applied to the second pickup region.

14. The image sensor of claim 9 , wherein a ground voltage is applied to the first pickup region.

15. The image sensor of claim 9 , wherein the first conductivity-type conductive layer comprises either a first conductivity-type well formed in the substrate, or a first conductivity-type epitaxial layer formed over the substrate.

16. The image sensor of claim 9 , wherein each of the plurality of unit pixel groups comprises:
a light-receiving part comprising a plurality of photoelectric conversion elements suitable for generating photocharges in response to incident light and sharing a single floating diffusion region; and
an output part suitable for outputting an image signal corresponding to the photocharges generated in the light-receiving part.

17. The image sensor of claim 16 , wherein the first pickup region is disposed between two adjacent output parts.

18. The image sensor of claim 16 , wherein the second pickup region is disposed between two adjacent light-receiving parts.

Assignees

• Sk Hynix Inc

Inventors

• Lee Woong-Hee

Classifications

• H04N25/621

  for the control of blooming · CPC title

• H01L27/14636

  Electricity · mapped topic

• H01L27/14605

  Electricity · mapped topic

• H01L27/14654 Primary

  Electricity · mapped topic

• H01L27/1463

  Electricity · mapped topic