Circuit for amplifying radio signal using high frequency

Patent metadata

Field	Value
Publication number	US-10079579-B2
Application number	US-201715487905-A
Country	US
Kind code	B2
Filing date	Apr 14, 2017
Priority date	Apr 14, 2016
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

A high frequency amplifier circuit includes a transistor including a drain, a gate, and a source, an inductance-capacitor (LC) tank connected to the drain, and a transformer connected to the gate and the source.

First claim

What is claimed is:

1. A high frequency amplifier circuit comprising:
a transistor including a drain, a gate, and a source;
an inductance-capacitance (LC) tank connected to the drain; and
a transformer connected to the gate and the source,
wherein the transformer includes:
a first transformer including a second inductor connected to the gate, and a third inductor connected to an input end of the high frequency amplifier circuit; and
a second transformer including the third inductor and a fourth inductor connected to the source, and
wherein the second inductor and the fourth inductor have opposite polarities.

2. The high frequency amplifier circuit of claim 1 , wherein one terminal of the second inductor is connected to a reference voltage and another terminal of the second inductor is connected to the gate.

3. The high frequency amplifier circuit of claim 1 , wherein one terminal of the third inductor is connected to an input end of the high frequency amplifier circuit and another terminal of the third inductor is connected to a ground.

4. The high frequency amplifier circuit of claim 1 , wherein one terminal of the fourth inductor is connected to the source and another terminal of the fourth inductor is connected to a ground.

5. The high frequency amplifier circuit of claim 1 , wherein:
the high frequency amplifier circuit has a perpendicular structure including a first layer and a second layer, and
the second inductor and the third inductor are included in the first layer and the fourth inductor is included in the second layer.

6. The high frequency amplifier circuit of claim 1 , wherein the LC tank includes a first inductor and a first capacitor.

7. A high frequency amplifier circuit comprising:
a first transistor including a first drain, a first gate, and a first source, and a second transistor including a second drain, a second gate, and a second source;
a first inductance-capacitance (LC) tank connected to the first drain and a first output end, and a second LC tank connected to the second drain and a second output end; and
a first transformer and a second transformer connected to the first gate, the first source, a first input end, the second gate, the second source, and a second input end,
wherein the first input end and the second input end are included in a differential input end,
wherein the first transformer includes a third inductor connected to the first gate and the second gate, and a fourth inductor connected to the first input end and the second input end,
wherein the second transformer includes the fourth inductor and a fifth inductor connected to the first source and the second source, and
wherein the third inductor and the fifth inductor have opposite polarities.

8. The high frequency amplifier circuit of claim 7 , wherein the first LC tank includes a first inductor and a first capacitor, and the second LC tank includes a second inductor and a second capacitor.

9. The high frequency amplifier circuit of claim 7 , wherein:
the high frequency amplifier circuit has a perpendicular structure including a first layer and a second layer, and
the third inductor and the fourth inductor are included in the first layer and the fifth inductor is included in the second layer.

10. A matching circuit comprising:
a first transistor; and
a high frequency amplifier circuit connected to a first drain of the first transistor,
wherein the high frequency amplifier circuit includes:
a second transistor including a second drain, a gate, and a source;
an inductance-capacitor (LC) tank connected to the second drain and an output end; and
a first transformer and a second transformer connected to the gate, the source, and the first drain,

wherein the first transformer includes a second inductor connected to the gate, and a third inductor connected to the first drain,
wherein the second transformer includes the third inductor and a fourth inductor connected to the source, and
wherein the second inductor and the fourth inductor have opposite polarities.

11. The matching circuit of claim 10 , wherein the third inductor is connected to a supply voltage.

12. The matching circuit of claim 10 , wherein the third inductor and the fourth inductor are connected to a bypass capacitor.

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Kong Sunwoo
• Park Bong Hyuk
• Lee Moon-Sik
• Lee Hui Dong

Classifications

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F1/56 Primary

  Modifications of input or output impedances, not otherwise provided for · CPC title

• H03F2200/391

  the output circuit of an amplifying stage comprising an LC-network · CPC title

• H03F3/195

  in integrated circuits · CPC title

• H03F2200/534

  Transformer coupled at the input of an amplifier · CPC title