Metal-doped graphene and growth method of the same

Patent metadata

Field	Value
Publication number	US-10079392-B2
Application number	US-201615202582-A
Country	US
Kind code	B2
Filing date	Jul 6, 2016
Priority date	Mar 8, 2016
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

A metal-doped graphene and a growth method of the same are provided. The metal-doped graphene includes graphene and metal elements, wherein the metal elements accounts for 1-30 at % based on the total content of the metal-doped graphene. The growth method includes performing a PECVD by using a carbon precursor, a metal precursor, and a group VI precursor in order to grow the metal-doped graphene.

First claim

What is claimed is:

1. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum chloride, ferric chloride or palladium dichloride.

2. The method of growing metal-doped graphene as claimed in claim 1 , wherein the carbon precursor comprises hydrocarbon gas.

3. The method of growing metal-doped graphene as claimed in claim 1 , wherein the carbon precursor is provided at a flow rate of 1 sccm-100 sccm.

4. The method of growing metal-doped graphene as claimed in claim 1 , wherein the group VI precursor comprises sulfur, oxygen or selenium.

5. The method of growing metal-doped graphene as claimed in claim 1 , wherein an amount of the metal precursor and the group VI precursor is independently between 10 mg and 1000 mg.

6. The method of growing metal-doped graphene as claimed in claim 1 , wherein a flame temperature is less than 500° C. during the microwave plasma torch (MPT) chemical vapor deposition process.

7. The method of growing metal-doped graphene as claimed in claim 1 , wherein a microwave power ranges from 100 W to 2000 W during the micro plasma torch (MPT) chemical vapor deposition process.

8. The method of growing metal-doped graphene as claimed in claim 1 , wherein a deposition time ranges from 0.5 min to 10 min during the micro plasma torch (MPT) chemical vapor deposition process.

9. The method of growing metal-doped graphene as claimed in claim 1 , wherein a working pressure ranges from 0.001 torr to 300 torr during the micro plasma torch (MPT) chemical vapor deposition process.

10. The method of growing metal-doped graphene as claimed in claim 1 , wherein the step of forming the metal-doped graphene comprises growing graphene and doping metal at the same time.

11. The method of growing metal-doped graphene as claimed in claim 1 , wherein the step of forming the metal-doped graphene further comprises providing inert gas.

12. The method of growing metal-doped graphene as claimed in claim 1 , wherein the step of forming the metal-doped graphene further comprises doping nitrogen.

13. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor n order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a flame temperature is less than 500° C. during the microwave plasma torch (MPT) chemical vapor deposition process.

14. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a microwave power ranges from 100 W to 2000 W during the micro plasma torch (MPT) chemical vapor deposition process.

15. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a deposition time ranges from 0.5 min to 10 min during the micro plasma torch (MPT) chemical vapor deposition process.

16. A method of growing metal-doped graphene, comprising the steps of:
providing a carbon precursor, a metal precursor, and a group VI precursor;
adding the carbon precursor, the metal precursor, and the group VI precursor into a reactor of a microwave plasma torch (MPT) chemical vapor deposition apparatus; and
performing a microwave plasma torch (MPT) chemical vapor deposition process on the carbon precursor, the metal precursor, and the group VI precursor in order to form a metal-doped graphene, wherein the metal precursor comprises aluminum precursor, palladium precursor or iron precursor, and a working pressure ranges from 0.001 torr to 300 torr during the micro plasma torch (MPT) chemical vapor deposition process.

Assignees

• Ind Tech Res Inst

Inventors

• Huang kun-ping
• Chi Yu-Wen

Classifications

• H01M4/8867

  Vapour deposition · CPC title

• H01M4/9041

  Metals or alloys (H01M4/92 takes precedence) · CPC title

• H01M4/8652 Primary

  as mixture · CPC title

• H01G11/86

  specially adapted for electrodes (carbonisation or activation of carbon for the manufacture of electrodes H01G11/34) · CPC title

• C23C16/26 Primary

  Deposition of carbon only · CPC title