High index dielectric film to increase extraction efficiency of nanowire LEDs

Patent metadata

Field	Value
Publication number	US-10079331-B2
Application number	US-201414776340-A
Country	US
Kind code	B2
Filing date	Mar 12, 2014
Priority date	Mar 15, 2013
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

Various embodiments include semiconductor devices, such as nanowire LEDs, that include a plurality of first conductivity type semiconductor nanowire cores located over a support, a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, and a layer of a high index of refraction material over at least a portion of a surface of at least one of the nanowire cores and the shells, wherein the high index of refraction material has an index of refraction that is between about 1.4 and about 4.5. Light extraction efficiency may be improved.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a plurality of first conductivity type semiconductor nanowire cores located over a support;
a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores;
a layer of a high index of refraction material over at least a portion of a surface of at least one of the nanowire cores and the shells, wherein the high index of refraction material has an index of refraction that is between about 1.4 and about 4.5 and wherein the high index of refraction material comprises a dielectric material; and
a silicon oxide layer over at least a portion of a surface of at least one of the nanowire cores and the shells and below the layer of high index of refraction material, wherein the silicon oxide layer has an index of refraction that is lower than the index of refraction of the high index of refraction material.

2. The semiconductor device of claim 1 , wherein the device comprises a nanowire LED.

3. The semiconductor device of claim 2 , wherein the first conductivity type semiconductor nanowire core and the second conductivity type semiconductor shell are configured to form a pn or pin junction that in operation provides an active region for light generation.

4. The semiconductor device of claim 2 , wherein the nanowire LED is configured to generate light in at least one emission wavelength in the visible, ultraviolet or infrared range, and the high index of refraction material has an index of refraction that is between about 1.4 and about 4.5 for the at least one emission wavelength.

5. The semiconductor device of claim 4 , wherein the at least one emission wavelength is between 350 to 650 nm.

6. The semiconductor device of claim 4 , wherein the high index of refraction material has an index of refraction that is between about 2.0 and 2.5 for the at least one emission wavelength.

7. The semiconductor device of claim 4 , wherein the layer of the high index of refraction material has a transmissivity of greater than about 85% for the at least one emission wavelength.

8. The semiconductor device of claim 1 , wherein the high index of refraction material comprises at least one of an oxide and a nitride.

9. The semiconductor device of claim 8 , wherein the high index of refraction material comprises TiO 2 .

10. The semiconductor device of claim 9 , wherein the high index of refraction material comprises at least one of Si 3 N 4 and SiO x N y .

11. The semiconductor device of claim 1 , further comprising:
a transparent, electrically conductive material over at least a portion of the surface of the second conductive type semiconductor shell, such that the layer of high index of refraction material is located over the transparent, electrically conductive material.

12. The semiconductor device of claim 11 , wherein the transparent, electrically conductive material comprises a transparent conductive film electrode of the device.

13. The semiconductor device of claim 1 , wherein each nanowire core and respective shell form a structure having a base, proximate to the support, and at least one sidewall extending from the base to a tip end of the structure, wherein the layer of high index of refraction material is provided over at least one of the tip end and the at least one sidewall of the structure.

14. The semiconductor device of claim 13 , wherein the tip end of the structure comprises a substantially flat surface, and the layer of high index of refraction material is provided over the substantially flat surface of the tip end and at least partially along a sidewall of the structure.

15. The semiconductor device of claim 13 , further comprising a transparent, electrically conductive material over the sidewall but not the tip end of the structure, such that the layer of high index of refraction material is located over the transparent, electrically conductive material over at least part of the sidewall.

16. The semiconductor device of claim 13 , wherein the tip end of the structure comprises a substantially conical-shaped tip and the layer of high index of refraction material is provided over the substantially conical-shaped tip and at least partially along a sidewall of the structure.

17. The semiconductor device of claim 2 , wherein the nanowire LED comprises a GaN-based nanowire LED.

18. The semiconductor device of claim 2 , wherein an external quantum efficiency of the nanowire LED device having a high index of refraction material layer is increased by a factor of 1.1-3.0 relative to the external quantum efficiency of the same device without a high index of refraction material layer.

19. The semiconductor device of claim 2 , wherein at least about 75% of the nanowire LEDs having a high index of refraction material layer on the support have an external quantum efficiency of greater than 3.0% at 20 mA.

20. The semiconductor device of claim 1 , wherein the semiconductor nanowire cores comprise a III-V semiconductor material.

21. The semiconductor device of claim 20 , wherein the III-V semiconductor material comprises at least one of GaAs, GaAs, GaAsP, InAs, Ge, ZnO, InN, GaInN, GaN, AlGaInN, BN, InP, InAsP, GaInP, InGaP:Si, InGaP:Zn, GaInAs, AlInP, GaAlInP, GaAlInAsP, GaInSb, InSb, InN and AlN.

22. The semiconductor device of claim 1 , wherein the semiconductor shells comprise a III-V semiconductor material.

23. The semiconductor device of claim 20 , wherein the III-V semiconductor material comprises at least one of GaAs, GaAs, GaAsP, InAs, Ge, ZnO, InN, GaInN, GaN, AlGaInN, BN, InP, InAsP, GaInP, InGaP:Si, InGaP:Zn, GaInAs, AlInP, GaAlInP, GaAlInAsP, GaInSb, InSb, InN and AlN.

Assignees

• Glo Ab

Inventors

• Herner Scott Brad
• Ji Xiaoming

Classifications

• H01L33/24

  Electricity · mapped topic

• H01L33/0075

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic

• H01L33/08

  Electricity · mapped topic

• H01L33/44 Primary

  Electricity · mapped topic