Semiconductor nanocrystals, a method for preparing a semiconductor nanocrystal, and product including same

Patent metadata

Field	Value
Publication number	US-10079328-B2
Application number	US-201615180630-A
Country	US
Kind code	B2
Filing date	Jun 13, 2016
Priority date	Aug 13, 2015
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

First claim

What is claimed is:

1. A method for preparing a semiconductor nanocrystal comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, the method comprising:
heating a first mixture comprising a Group II-precursor and a Group III-precursor at a first temperature,
adding an Sb-precursor and an Group VI-precursor to the first mixture at a second temperature to form a reaction mixture, the Sb-precursor comprising a composition represented by the formula (1):
Sb(Y(R) 3 ) 3   (I)

where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, or thioalkyl; and
heating the reaction mixture at a third temperature to form the semiconductor nanocrystal comprising the alloy including a Group III element, a Group II element, antimony, and a Group VI element.

2. A method in accordance with claim 1 wherein the first temperature is greater than room temperature but less than about 150° C.

3. A method m accordance with claim 1 wherein the second temperature is greater than 220° C.

4. A method m accordance with claim 1 wherein the third temperature is less than 325° C.

5. A method in accordance with claim 1 wherein the first temperature is in a range from about 75° C. to about 125° C.

6. A method in accordance with claim 1 wherein the second temperature is in a range from about 250° C. to about 325° C.

7. A method in accordance with claim 1 wherein the third temperature is in a range from about 260° C. to about 300° C.

8. A method in accordance with claim 1 wherein the mixture further includes a carboxylic acid compound.

9. A method in accordance with claim 1 wherein the molar ratio of Group III elements to Group II elements to antimony to Group VI elements included in the reaction mixture is 1 to 2 to 1 to 0.5.

10. A method m accordance with claim 1 further including overcoating the semiconductor nanocrystal cores with one or more morgamc semiconductor materials.

11. A method in accordance with claim 1 wherein the Group III element comprises aluminum, gallium, indium, or thallium.

12. A method in accordance with claim 1 wherein the Group II element comprises zinc, cadmium, or mercury.

13. A method in accordance with claim 1 wherein the Group VI element comprises oxygen, sulfur, selenium, or tellurium.

14. A method in accordance with claim 1 wherein the Group III element comprises indium, the Group II element comprises zinc, and the Group VI element comprises sulfur.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kamplain Justin W

Classifications

• C22C1/00

  Making non-ferrous alloys (by electrothermic methods C22B4/00; by electrolysis C25C1/24, C25C3/36) · CPC title

• H01L33/06 Primary

  Electricity · mapped topic

• C22C30/06 Primary

  containing zinc · CPC title

• H01L33/26

  Electricity · mapped topic

• H10H20/822

  Materials of the light-emitting regions · CPC title