Displays With Silicon and Semiconducting Oxide Thin-Film Transistors
US-2015055051-A1 · Feb 26, 2015 · US
US10079276B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10079276-B2 |
| Application number | US-201414571638-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2014 |
| Priority date | Aug 14, 2014 |
| Publication date | Sep 18, 2018 |
| Grant date | Sep 18, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An organic light emitting display panel is provided that comprises a substrate comprising an emission area and a non-emission area; a black matrix disposed on the non-emission area and comprising at least one open area that exposes at least a portion of a pattern formed on the substrate, wherein the pattern or the exposed portion of the pattern comprises a multi-layer structure comprising a conductive layer and at least one low reflective layer.
Opening claim text (preview).
What is claimed is: 1. An organic light emitting display panel, comprising: a substrate comprising an emission area and a non-emission area; a black matrix disposed on the non-emission area of the substrate and comprising at least one open area; a first overcoat layer formed on the black matrix; a first insulating layer formed on the first overcoat layer; a plurality of transistors formed on the first insulating layer, each of the transistors comprising a semi-conductive layer, a gate electrode, a drain electrode and a source electrode; a second insulating layer formed on the semi-conductive layer; a plurality of signal lines formed on the second insulating layer, where the at least one open area exposes at least a portion of a signal line where the open area is a marker for location of pixel repair, and where the plurality of lines contains redundant lines for an identical function; a third insulating layer formed on the signal lines; a second overcoat layer formed on the third insulating layer; a pixel electrode formed on the second overcoat layer and located in an emission area; a bank formed along an edge of the pixel electrode exposes a part of the pixel electrode and is located in a non-emission area; and a common electrode layered on the entire area of the pixel electrode and the bank, wherein: the plurality of transistors comprises a driving transistor which drives the pixel electrode, a sensing transistor which is connected between a storage capacitor and a reference voltage line, and a switching transistor which is connected between a data line and a gate electrode of the driving transistor, a first open area exposes a drain electrode of the driving transistor, a second open area exposes a drain electrode of the sensing transistor, a third open area exposes a drain electrode of the switching transistor, and the at least one open area exposes a portion of a gate line which is connected to at least one of a gate electrode of the sensing transistor and a gate electrode of the switching transistor, the signal line or the exposed portion of the signal line comprises a multi-layer structure comprising a conductive layer and at least one low reflective layer, the at least one open area overlaps with at least a portion of a shielding layer formed between the first overcoat layer and one of the plurality transistors, and the shielding layer comprises a conductive layer, a first low reflective layer formed on the conductive layer and comprising a metallic oxide, and a second low reflective layer formed on the first low reflective layer and comprising a material that absorbs light introduced from outside the substrate. 2. The organic light emitting display panel according to claim 1 , wherein the light introduced through the substrate is non-polarized light. 3. The organic light emitting display panel according to claim 1 , wherein the black matrix comprises heat-tolerant organic matter. 4. The organic light emitting display panel according to claim 1 , wherein the plurality of lines containing redundant lines for an identical function are exposed through the open area. 5. An organic light emitting display panel, comprising: a substrate comprising an emission area and a non-emission area; a black matrix disposed on the non-emission area of the substrate and comprising at least one open area exposing an emission area of each of a plurality of pixels formed at intersection points between a plurality of data lines and a plurality of gate lines; a first overcoat layer formed on the black matrix; a first insulating layer formed on the first overcoat layer; a plurality of transistors formed on the first insulating layer, each of the transistors comprising a semi-conductive layer, a gate electrode, a drain electrode and a source electrode; and a second insulating layer formed on the semi-conductive layer, wherein: the plurality of transistors comprises a driving transistor which drives a pixel electrode, a sensing transistor which is connected between a storage capacitor and a reference voltage line, and a switching transistor which is connected between a data line and a gate electrode of the driving transistor, at least one pixel from the plurality of pixels is a pixel from which a portion of a pattern is cut, the black matrix further comprises open areas disposed on the non-emission area exposing the cut portion, exposing a drain electrode of the driving transistor, exposing a drain electrode of the sensing transistor, exposing a drain electrode of the switching transistor, and exposing a portion of a gate line which is connected to at least one of a gate electrode of the sensing transistor and a gate electrode of the switching transistor, the at least one open area exposes a portion of a signal line formed on the substrate and is a marker for location of pixel repair, a plurality of signal lines formed on the substrate contains redundant lines for an identical function, and the at least one open area overlaps with at least a portion of a shielding layer formed between the first overcoat layer and one of the plurality of transistors, where the shielding layer comprises a conductive layer, a first low reflective layer formed on the conductive layer and comprising a metallic oxide, and a second low reflective layer formed on the first low reflective layer and comprising a material that absorbs light introduced from outside the substrate. 6. The organic light emitting display panel according to claim 5 , wherein the light introduced through the substrate is non-polarized light. 7. The organic light emitting display panel according to claim 5 , wherein the black matrix comprises heat-tolerant organic matter. 8. The organic light emitting display panel according to claim 5 , wherein the plurality of lines containing redundant lines for an identical function are exposed through the open area.
Repairing · CPC title
Interconnections, e.g. wiring lines or terminals · CPC title
Shielding, e.g. light-blocking means over the TFTs · CPC title
comprising light absorbing layers, e.g. light-blocking layers · CPC title
comprising light absorbing layers, e.g. black layers · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.