Interconnect Structures for Wafer Level Package and Methods of Forming Same
US-2016172329-A1 · Jun 16, 2016 · US
US10079220B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10079220-B2 |
| Application number | US-201715798698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 31, 2017 |
| Priority date | Nov 4, 2016 |
| Publication date | Sep 18, 2018 |
| Grant date | Sep 18, 2018 |
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Official abstract text for this publication.
This disclosure provides a package substrate and its fabrication method. The package substrate includes: a dielectric body; a first circuit device disposed in the dielectric body, the first circuit device comprising a first terminal and a second terminal at a top of the first circuit device; a second circuit device disposed in the dielectric body, the second circuit device comprising a third terminal at a top of the second circuit device; a first conductive pillar formed in the dielectric body and connected to the first terminal; a first bonding wire connecting the second terminal and the third terminal; and a redistribution layer comprising a first conductive wire formed on the dielectric body, the conductive wire connected to the first conductive pillar.
Opening claim text (preview).
What is claimed is: 1. A package substrate comprising: a dielectric body; a first circuit device disposed in the dielectric body, the first circuit device comprising a first terminal and a second terminal at a top of the first circuit device; a second circuit device disposed in the dielectric body and not vertically overlapped with the first circuit device, the second circuit device comprising a third terminal at a top of the second circuit device; a first conductive pillar formed in the dielectric body and connected to the first terminal; a first bonding wire connecting the second terminal and the third terminal; and a redistribution layer comprising a first conductive wire formed on the dielectric body, the conductive wire connected to the first conductive pillar; wherein the first and second terminals are located at a first depth of the dielectric body, the third terminal is located at a second depth of the dielectric body, and the first depth is different from the second depth. 2. The package substrate of claim 1 , wherein the first bonding wire is made of gold, silver, copper, palladium, or their combinations. 3. The package substrate of claim 1 , wherein the first circuit device comprises a semiconductor chip or an electronic component, and the second circuit device comprises a semiconductor chip or an electronic component. 4. The package substrate of claim 1 , wherein the second circuit device further comprises a fourth terminal at the top of the second circuit device, the redistribution layer further comprises a second conductive wire, and the package substrate further comprises a second conductive pillar formed in the dielectric body and connecting the fourth terminal and the second conductive wire. 5. The package substrate of claim 1 , wherein the second circuit device further comprises a fourth terminal at the top of the second circuit device, and the package substrate further comprises: a third circuit device disposed in the dielectric body, the third circuit device comprising a fifth terminal at a top of the third circuit device; and a second bonding wire connecting the fourth terminal and the fifth terminal. 6. The package substrate of claim 1 , wherein a protective layer is formed below the dielectric body.
comprising gold [Au] · CPC title
Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers · CPC title
of die-attach connectors · CPC title
of bond wires · CPC title
Die-attach connectors and bond wires · CPC title
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