High temperature superconducting quantum interference device (Hi-SQUID)

US10078118B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10078118-B2
Application numberUS-201615148062-A
CountryUS
Kind codeB2
Filing dateMay 6, 2016
Priority dateMay 6, 2016
Publication dateSep 18, 2018
Grant dateSep 18, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A High Temperature Superconducting (HTS) Superconducting Quantum Interference Device and methods for fabrication can include at least one bi-Superconducting Quantum Interference Device. The bi-SQUID can include an HTS substrate that can be formed with a step edge. A superconducting loop of YBCO can be deposited on the step edge to establish two Josephson Junctions. A superconducting path that bi-sects the superconducting loop path can also be deposited onto the substrate. In some embodiments, the bisecting path can cross the step edge twice, and the bisecting path can be ion milled at one of the crossing points to round the bisecting path and thereby remove the fourth Josephson Junction at the other crossing point. In still other embodiments, the bisecting path can be completely on the upper shelf (or the lower shelf), and the bisecting path can be ion damaged, ion damaged, or particle damaged, to establish the third Josephson Junction.

First claim

Opening claim text (preview).

What is claimed is: 1. A bi-Superconducting Quantum Interference Device (bi-SQUID) comprising: a substrate formed with a step edge to establish an upper step and a lower step on said substrate; a superconducting loop deposited on said step edge to establish two Josephson Junctions; and, a superconductive bisecting path deposited onto said substrate, said bisecting path bisecting said superconducting loop to establish a third Josephson Junction, resulting in said bi-SQUID, wherein said bisecting path crosses said step edge twice at a first crossing point and a second crossing point, wherein a region of said bisecting path is ion milled at one of said first crossing point and said second crossing point, so that said bisecting path is rounded at said region. 2. The bi-SQUID of claim 1 wherein said substrate is a High Temperature Superconductivity (HTS) material. 3. The bi-SQUID of claim 2 , wherein said HTS material is MgO. 4. The bi-SQUID of claim 1 , wherein said superconducting loop is made of a YBCO material.

Assignees

Inventors

Classifications

  • using superconductive devices · CPC title

  • Electricity · mapped topic

  • SQUIDS · CPC title

  • Superconducting devices (integrated devices or assemblies of multiple devices H10N69/00) · CPC title

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What does patent US10078118B2 cover?
A High Temperature Superconducting (HTS) Superconducting Quantum Interference Device and methods for fabrication can include at least one bi-Superconducting Quantum Interference Device. The bi-SQUID can include an HTS substrate that can be formed with a step edge. A superconducting loop of YBCO can be deposited on the step edge to establish two Josephson Junctions. A superconducting path that b…
Who is the assignee on this patent?
Berggren Susan Anne Elizabeth, Taylor Benjamin J, Leese De Escobar Anna, and 1 more
What technology area does this patent fall under?
Primary CPC classification G01R33/0354. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 18 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).