Solution growth of single-crystal perovskite structures

Patent metadata

Field	Value
Publication number	US-10077507-B2
Application number	US-201514954442-A
Country	US
Kind code	B2
Filing date	Nov 30, 2015
Priority date	Nov 30, 2015
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.

First claim

What is claimed is:

1. A method for growing single-crystal perovskite structures, the method comprising immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B into the solution to form an intermediate complex with the anion X in the solution and sufficient to induce recrystallization of the intermediate complex with the cation ion A out of the solution to form a plurality of single-crystal perovskite structures composed of A, B and X,
wherein the structures of the plurality of single-crystal perovskite structures are elongated structures having opposing end facets which are substantially parallel to one another and substantially perpendicular to a longitudinal axis of the elongated structure,
and further wherein the perovskite of the perovskite structures has a formula ABX 3 , wherein A, the cation ion, is a protonated amine comprising an organic group; B, the metal ion, is selected from Pb 2+ , Sn 2+ , and Ge 2+ ; and X, the anion, is a halide; or further wherein perovskite of the perovskite structures has formula A 2 BX 4 , wherein A, the cation ion, is selected from C n1 H 2n1+1 NH 3 + , wherein n 1 is 3 or greater; Cn 2 H 2n2−1 C n3 H 2n3 NH 3 + , wherein n 2 is 3 or greater and wherein n 3 is 0 or greater; and C 6 H 5 C n4 H 2n4 NH 3 + , wherein n 4 is 0 or greater; B, the metal ion, is selected from Pb 2+ , Sn 2+ , and Ge 2+ ; and X, the anion, is a halide.

2. The method of claim 1 , wherein the perovskite of the perovskite structures has the formula ABX 3 .

3. The method of claim 1 , wherein the perovskite of the perovskite structures has the formula ABX 3 , and further wherein A is selected from a primary ammonium and an iminium.

4. The method of claim 3 , wherein A is selected from methylammonium, formamidinium, and phenethylamine; and X is selected from F − , I − , Br − and Cl − .

5. The method of claim 1 , wherein the film is positioned to oppositely face a surface of a second substrate and the plurality of single-crystal perovskite structures are formed on the surface of the second substrate.

6. The method of claim 5 , wherein the perovskite of the perovskite structures has the formula A 2 BX 4 .

7. The method of claim 6 , wherein A is selected from phenethylamine and cyclohexylamine.

8. The method of claim 1 , wherein the structures comprise plates, belts, rods, wires, tubes or combinations thereof.

9. The method of claim 1 , wherein the structures are characterized by an average aspect ratio of 10 or greater.

10. The method of claim 9 , wherein the structures are characterized by an average thickness t or average diameter d in the range of from about 50 nm to about 10 μm.

11. The method of claim 10 , wherein the structures are characterized by an average thickness t or average diameter d in the range of from about 50 nm to about 1 μm.

12. The method of claim 1 , wherein the structures are nanowires configured to produce lasing action when the nanowires are under the influence of an applied electromagnetic field.

13. The method of claim 1 , wherein the concentration of the cation precursor compound is sufficiently high to dissolve the film of the metal precursor compound, but sufficiently low such that the perovskite is able to crystallize out of the solution.

14. The method of claim 1 , wherein the growth temperature is room temperature or no more than about 40° C. above room temperature.

15. The method of claim 1 , wherein the elongated structures of the plurality of single-crystal perovskite structures are each composed of a plurality of facets, the opposing end facets being ones of the plurality of facets, wherein neighboring facets of the plurality of facets meet at substantially sharp edges.

16. The method of claim 1 , further comprising collecting the plurality of single-crystal perovskite structures from the surface of the substrate.

17. A method for growing single-crystal perovskite structures, the method comprising immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X, wherein the structures are nanowires configured to produce lasing action when the nanowires are under the influence of an applied electromagnetic field, and further wherein the nanowires are characterized by a rectangular cross-section or a hexagonal cross-section;
and further wherein the perovskite of the perovskite structures has a formula ABX 3 , wherein A, the cation ion, is a protonated amine comprising an organic group; B, the metal ion, is selected from Pb 2+ , Sn 2+ , and Ge 2+ ; and X, the anion, is a halide; or further wherein perovskite of the perovskite structures has formula A 2 BX 4 , wherein A, the cation ion, is selected from C n1 H 2n1+1 NH 3 + , wherein n 1 is 3 or greater; Cn 2 H 2n2−1 C n3 H 2n3 NH 3 + , wherein n 2 is 3 or greater and wherein n 3 is 0 or greater; and C 6 H 5 C n4 H 2n4 NH 3 + , wherein n 4 is0 or greater; B, the metal ion, is selected from Pb 2+ , Sn 2+ , and Ge 2+ ; and X, the anion, is a halide.

18. A method for growing single-crystal perovskite structures, the method comprising immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X, wherein the structures are nanowires configured to produce lasing action when the nanowires are under the influence of an applied electromagnetic field, and further wherein the nanowires have end facets configured to provide a Fabry-Perot optical cavity;
and further wherein the perovskite of the perovskite structures has a formula ABX 3 , wherein A, the cation ion, is a protonated amine comprising an organic group; B, the metal ion, is selected from Pb 2+ , Sn 2+ , and Ge 2+ ; and X, the anion, is a halide; or further wherein perovskite of the perovskite structures has formula A 2 BX 4 , wherein A, the cation ion, is selected from C n1 H 2n1+1 NH 3 + , wherein n 1 is 3 or greater; Cn 2 H 2n2−1 C n3 H 2n3 NH 3 + , wherein n 2 is 3 or greater and wherein n 3 is 0 or greater; and C 6 H 5 C n4 H 2n4 NH 3 + , wherein n 4 is 0 or greater; B, the metal ion, is selected from Pb 2+ , Sn 2+ , and Ge 2+ ; and X, the anion, is a halide.

19. A single-crystal perovskite structure configured to produce lasing action when under the influence of an applied

Assignees

• Wisconsin Alumni Res Found

Inventors

• Jin Song
• Fu Yongping
• Meng Fei

Classifications

• C30B29/60

  characterised by shape · CPC title

• C30B29/12

  Halides · CPC title

• C07F7/24

  Lead compounds · CPC title

• H01L51/5012

  Electricity · mapped topic

• C30B7/14 Primary

  the crystallising materials being formed by chemical reactions in the solution · CPC title