Organoaminodisilane precursors and methods for depositing films comprising same

Patent metadata

Field	Value
Publication number	US-10077364-B2
Application number	US-201715461999-A
Country	US
Kind code	B2
Filing date	Mar 17, 2017
Priority date	Jun 1, 2012
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

First claim

The invention claimed is:

1. A composition comprising di-iso-propylaminodisilane wherein the composition contains less than 5 ppm chloride ions.

2. The composition of claim 1 wherein the composition contains less than 3 ppm chloride ions.

3. The composition of claim 1 wherein the composition contains less than 1 ppm chloride ions.

4. The composition of claim 1 further comprising at least one solvent wherein the solvent does not react with di-iso-propylaminodisilane, has a boiling point and wherein the difference between the boiling point of the solvent and that of the at least one organoaminodisilane is 40° C. or less.

5. The composition of claim 1 further comprising at least one solvent selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, tertiary aminoether.

6. The composition of claim 1 further comprising at least one purge gas.

7. The composition of claim 6 wherein the purge gas comprises at least one member selected from the group consisting of argon, nitrogen, helium, neon and hydrogen.

8. The composition of claim 1 further comprising at least one oxygen source.

9. The composition of claim 8 wherein the oxygen source comprises at least one member selected from the group consisting of water, oxygen plasma, ozone, carbon monoxide, and carbon dioxide.

10. The composition of claim 1 further comprising at least one nitrogen source.

11. The composition of claim 10 wherein the nitrogen-containing source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixtures thereof.

12. The composition of claim 1 further comprising at least one reducing agent source.

13. The composition of claim 12 wherein the reducing agent is at least one selected from the group consisting of hydrogen, hydrogen plasma, or hydrogen chloride.

14. The composition of claim 1 wherein di-iso-propylaminodisilane is a liquid.

15. The composition of claim 1 wherein the precursor comprises less than 0.5% by weight bis-disilane.

16. The composition of claim 15 wherein the bis-disilane comprises bis(di-iso-propylamino)disilane.

17. The composition of claim 1 further comprising at least one solvent selected from the group consisting of octane, ethylcyclohexane, and toluene.

18. The composition of claim 1 wherein the di-iso-propylaminodisilane is greater than 99.5 weight % pure.

19. The composition of claim 1 further comprising at least one member selected from the group consisting of solvents, nitrogen, argon, helium and combinations thereof.

20. The composition of claim 19 wherein the composition is maintained within a vessel.

21. The composition of claim 19 wherein the composition is in an ALD reactor.

22. The composition of claim 1 further comprising at least one member selected from the group consisting of solvents, nitrogen, argon, oxygen, helium and combinations thereof.

23. The composition of claim 22 wherein the composition is in a CVD reactor.

24. A composition comprising di-iso-proplyaminodisilane wherein the di-iso-propylaminodisilane contains less than 5 ppm chloride ions and is made by a process comprising reacting disilane with diisopropylamine in the presence of a catalyst.

25. The composition of claim 24 wherein process uses disilane and diisopropylamine that are substantially free of halides.

Assignees

• Versum Mat Us Llc

Inventors

• Mayorga Steven Gerard
• Bowen Heather Regina
• Lei Xinjian
• Xiao Manchao
• Chandra Haripin
• Mallikarjunan Anupama
• Pearlstein Ronald Martin

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title