Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US10077189B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10077189-B2 |
| Application number | US-201113577223-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 7, 2011 |
| Priority date | Feb 5, 2010 |
| Publication date | Sep 18, 2018 |
| Grant date | Sep 18, 2018 |
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Various embodiments relate to a method of modifying the electrical properties of carbon nanotubes. The method may include providing a substrate having carbon nanotubes deposited on a surface of the substrate, and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid. A field-effect transistor including the modified carbon nanotubes is also provided.
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The invention claimed is: 1. A method of modifying electrical properties of carbon nanotubes, comprising: providing a substrate having carbon nanotubes deposited on a surface of the substrate; and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid, the coating layer modifying the electrical properties of the carbon nanotubes, wherein the ionic liquid is incorporated in the matrix such that the matrix hosts the nanoparticles and the ionic liquid therein, and wherein the mixture of the nanoparticles, the matrix in which the nanoparticles are dissolved or stabilized, and the ionic liquid is mixed prior to coating on carbon nanotubes. 2. The method of claim 1 , wherein the nanoparticles are selected from the group consisting of silica, ZnO, TiO 2 , Al 2 O 3 , Fe 3 O 4 , Fe 2 O 3 , clay, opal, glass, aerogel, and mixtures thereof. 3. The method of claim 2 , wherein the nanoparticles comprise silica. 4. The method of claim 3 , wherein the silica nanoparticles comprise dimethylvinylated and trimethylated silica nanoparticles. 5. The method of claim 1 , wherein the matrix comprises an elastomer. 6. The method of claim 5 , wherein the elastomer comprises silicone. 7. The method of claim 6 , wherein the silicone elastomer comprises polydimethylsiloxane. 8. The method of claim 1 , wherein the ionic liquid comprises an organic azolium salt. 9. The method of claim 8 , wherein the ionic liquid is 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide. 10. The method of claim 1 , wherein the carbon nanotubes comprise single-walled carbon nanotubes. 11. The method of claim 1 , wherein the substrate forms part of a transistor or resistor. 12. The method of claim 11 , wherein the substrate forms part of a field-effect transistor. 13. The method of claim 1 , wherein the coating layer is deposited in ambient. 14. The method of claim 1 , wherein the mixture is mixed for about 1 to about 30 minutes prior to coating on carbon nanotubes. 15. The method of claim 1 , wherein the nanoparticles are dissolved in the matrix prior to mixing with the ionic liquid. 16. The method of claim 15 , wherein the matrix is a silicone elastomer base. 17. The method of claim 1 , wherein the substrate forms part of a conductive electrode. 18. A method for manufacturing a field-effect transistor, the method comprising: modifying electrical properties of at least one carbon nanotube, the modifying comprising: providing a substrate having carbon nanotubes deposited on a surface of the substrate; and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid, wherein the ionic liquid is incorporated in the matrix such that the matrix hosts the nanoparticles and the ionic liquid therein, and wherein the mixture of the nanoparticles, the matrix in which the nanoparticles are dissolved or stabilized, and the ionic liquid is mixed prior to coating on carbon nanotubes; forming the field-effect transistor, the forming including using the at least one modified carbon nanotube to form a conductive channel at an active area of the field-effect transistor.
Ingredients treated with inorganic substances · CPC title
Electricity · mapped topic
Carbon · CPC title
modified by treatment with other compounds · CPC title
Electricity · mapped topic
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