Power converter

Patent metadata

Field	Value
Publication number	US-10075098-B2
Application number	US-201715658851-A
Country	US
Kind code	B2
Filing date	Jul 25, 2017
Priority date	Jul 28, 2016
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

An inverter main circuit using high-side MOSFETS converts a power source voltage of a battery to an alternating current, and supplies the alternating current to a three-phase motor. A control circuit drives, via a high-side drive circuit and a low-side drive circuit, the MOSFETS. A charge pump circuit boosts the power source voltage to a charge pump voltage. A bootstrap circuit outputs a bootstrap voltage that is boosted by diodes and capacitors, which is then passed to a clamp circuit for clamping and outputting as a clamp voltage. Based on the supply of the charge pump voltage or the clamp voltage in response to a fluctuation of the power source voltage, a continuous circuit operation is provided while protecting the circuit in operation.

First claim

What is claimed is:

1. A power converter comprising:
a gate-control-type semiconductor element provided on a power supply path from a power source to a load;
a high-side drive circuit configured to provide a drive voltage to a gate of the gate-control-type semiconductor element, wherein a provided drive voltage is higher than a power source voltage;
a charge pump circuit configured to generate and to supply an output voltage to the high-side drive circuit, wherein a generated output voltage is higher than the power source voltage;
a bootstrap circuit configured to generate an output voltage higher than the power source voltage; and
a clamp circuit configured to receive the output voltage of the bootstrap circuit, to clamp a higher-than-preset-value voltage to a clamp voltage, and to supply the clamp voltage to the high-side drive circuit, the clamp circuit including an input terminal, an output terminal, and a switching element connected in series between the input terminal and the output terminal, the clamp circuit disposed so that the switching element is connected in series between an output terminal of the bootstrap circuit and the output terminal of the clamp circuit, wherein the clamp circuit is further configured to output a constant voltage from the switching element.

2. The power converter of claim 1 , wherein
the clamp circuit is configured to clamp a preset voltage for a direct output to the high-side drive circuit regardless of the output voltage of the bootstrap circuit.

3. The power converter of claim 2 , wherein
the clamp circuit is configured to clamp the output voltage to the preset voltage relative to a ground voltage.

4. The power converter of claim 2 , wherein
the clamp circuit is configured to generate the output voltage based on (i) a reference voltage set as a constant voltage relative to a ground potential and (ii) a division voltage derived from a voltage division of the output voltage.

5. The power converter of claim 2 , wherein
the clamp circuit is configured to set the preset voltage to a voltage level lower than an output voltage of the charge pump circuit operating in a normal state by receiving a normal power source voltage.

6. The power converter of claim 2 , wherein
the switching element is a bipolar transistor configured to receive the output voltage of the bootstrap circuit at an emitter and to output the constant voltage from a collector.

7. The power converter of claim 2 , wherein
the switching element is a MOSFET configured to receive the output voltage of the bootstrap circuit at a source and to output the constant voltage from a drain.

8. The power converter of claim 1 , wherein
the gate-control-type semiconductor element is disposed in an inverter circuit provided as a bridge connection of a plurality inverters and configured to convert a direct voltage to an alternating voltage.

9. The power converter of claim 1 , wherein
the charge pump circuit is packaged together with the high-side drive circuit as a single integrated circuit package.

Assignees

• Denso Corp

Inventors

• Imura Takashi

Classifications

• H03K2217/0054

  Gating switches, e.g. pass gates · CPC title

• H03K17/0822

  in field-effect transistor switches · CPC title

• H02M1/08

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02P27/08

  with pulse width modulation · CPC title

• H02M7/5395 Primary

  by pulse-width modulation · CPC title