Organic semiconductors as window layers for inorganic solar cells
US-9118026-B2 · Aug 25, 2015 · US
US10074820B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10074820-B2 |
| Application number | US-201314429929-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2013 |
| Priority date | Sep 26, 2012 |
| Publication date | Sep 11, 2018 |
| Grant date | Sep 11, 2018 |
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The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E G ), and an organic sensitizing window layer disposed on the inorganic subcell. In one aspect, the organic sensitizing window layer comprises a singlet fission material. In another aspect, the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, where the singlet fission host exhibits an excitation triplet energy (E T-SF ) greater than or equal to an excitation triplet energy (E T-PE ) exhibited by the phosphorescent emitter dopant.
Opening claim text (preview).
What is claimed is: 1. A photosensitive optoelectronic device comprising: two electrodes; an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E G ); and an organic sensitizing window layer disposed on the inorganic subcell, wherein the organic sensitizing window layer comprises a singlet fission host and a phosphorescent emitter dopant, the singlet fission host exhibiting an excitation triplet energy (E T-SF ) greater than or equal to an excitation triplet energy (E T-PE ) exhibited by the phosphorescent emitter dopant. 2. The device of claim 1 , wherein the singlet fission host exhibits an absorptivity of light of at least 10 3 cm −1 at one or more wavelengths ranging from 300 to 700 nm. 3. The device of claim 1 , wherein the singlet fission host has an excitation singlet energy (E S-SF ) greater than 2.0 eV. 4. The device of claim 1 , wherein the phosphorescent emitter dopant emits radiation at one or more wavelengths in the red/NIR spectral region. 5. The device of claim 4 , wherein the phosphorescent emitter dopant exhibits highest phosphorescence efficiency in the red/NIR spectral region. 6. The device of claim 1 , wherein the phosphorescent emitter emits radiation at an energy greater than or equal to the band gap energy (E G ). 7. The device of claim 1 , wherein the singlet fission host is chosen from polyacenes, rylenes, rubrenes, and biradicaloids. 8. The device of claim 7 , wherein the polyacenes are anthracene, tetracene, pentacene, and derivatives thereof, and the biradicaloids are benzofurans. 9. The device of claim 1 , wherein the phosphorescent emitter dopant comprises a material chosen from metal porphyrins and phthalocyanines. 10. The device of claim 9 , wherein the metal porphyrins are platinum porphyrins. 11. The device of claim 10 , wherein the platinum porphyrins are platinum tetraphenyl-tetrabenzo-porphyrin (PtTPBP), tetraphenyltetranaptho platinum porphyrin (PtTPNP), tetraphenyltetraanthro platinum porphyrin (PtANP), platinum-diphenyltetranaptho-porphyrin (PtDPNP), and derivatives thereof.
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