Materials and Method for Trapping Lead Leakage in Perovskite Solar Cells
US-2024215432-A1 · Jun 27, 2024 · US
US10074814B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10074814-B2 |
| Application number | US-201414244572-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 3, 2014 |
| Priority date | Apr 22, 2013 |
| Publication date | Sep 11, 2018 |
| Grant date | Sep 11, 2018 |
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The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
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What is claimed is: 1. A two-dimensional layer comprising M-R, wherein M is selected from the group consisting of Ge, and Sn; wherein R is C 1-18 alkyl; and wherein the M-R is crystalline. 2. The two-dimensional layer of claim 1 , wherein M is Ge. 3. The two-dimensional layer of claim 1 , wherein R is CH 3 . 4. The two-dimensional layer of claim 1 , wherein the layer is stable up to about 300° C. 5. The two-dimensional layer of claim 1 , wherein the layer has a band gap of from about 0.1 eV to about 3.4 eV. 6. A stack comprising the two-dimensional layer of claim 1 . 7. The stack of claim 6 , wherein M is Ge. 8. The stack of claim 6 , wherein R is CH 3 . 9. A two-dimensional layer of claim 1 , wherein M-R is Ge(CH 3 ). 10. A stack comprising the two-dimensional layer of claim 9 . 11. The two-dimensional layer of claim 1 , wherein R is a branched or unbranched hydrocarbon. 12. A light-emitting device comprising the two-dimensional layer of claim 1 . 13. The light-emitting device of claim 12 , wherein the light-emitting device is selected from the group consisting of light-emitting diodes and lasers. 14. The light-emitting device of claim 12 , wherein the two dimensional layer comprises GeCH 3 . 15. A light-absorbing device comprising the two dimensional layer of claim 1 . 16. The light-absorbing device of claim 15 , wherein the light-absorbing device is selected from the group consisting of photovoltaics and photodetectors. 17. The light-absorbing device of claim 15 , wherein the two dimensional layer comprises GeCH 3 . 18. A transistor comprising the two-dimensional layer of claim 1 . 19. The transistor of claim 18 , wherein the two dimensional layer comprises GeCH 3 .
Electricity · mapped topic
Electricity · mapped topic
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Electricity · mapped topic
Chemical synthesis, e.g. chemical bonding or breaking · CPC title
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