Germanane analogs and optoelectronic devices using the same

US10074814B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10074814-B2
Application numberUS-201414244572-A
CountryUS
Kind codeB2
Filing dateApr 3, 2014
Priority dateApr 22, 2013
Publication dateSep 11, 2018
Grant dateSep 11, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

First claim

Opening claim text (preview).

What is claimed is: 1. A two-dimensional layer comprising M-R, wherein M is selected from the group consisting of Ge, and Sn; wherein R is C 1-18 alkyl; and wherein the M-R is crystalline. 2. The two-dimensional layer of claim 1 , wherein M is Ge. 3. The two-dimensional layer of claim 1 , wherein R is CH 3 . 4. The two-dimensional layer of claim 1 , wherein the layer is stable up to about 300° C. 5. The two-dimensional layer of claim 1 , wherein the layer has a band gap of from about 0.1 eV to about 3.4 eV. 6. A stack comprising the two-dimensional layer of claim 1 . 7. The stack of claim 6 , wherein M is Ge. 8. The stack of claim 6 , wherein R is CH 3 . 9. A two-dimensional layer of claim 1 , wherein M-R is Ge(CH 3 ). 10. A stack comprising the two-dimensional layer of claim 9 . 11. The two-dimensional layer of claim 1 , wherein R is a branched or unbranched hydrocarbon. 12. A light-emitting device comprising the two-dimensional layer of claim 1 . 13. The light-emitting device of claim 12 , wherein the light-emitting device is selected from the group consisting of light-emitting diodes and lasers. 14. The light-emitting device of claim 12 , wherein the two dimensional layer comprises GeCH 3 . 15. A light-absorbing device comprising the two dimensional layer of claim 1 . 16. The light-absorbing device of claim 15 , wherein the light-absorbing device is selected from the group consisting of photovoltaics and photodetectors. 17. The light-absorbing device of claim 15 , wherein the two dimensional layer comprises GeCH 3 . 18. A transistor comprising the two-dimensional layer of claim 1 . 19. The transistor of claim 18 , wherein the two dimensional layer comprises GeCH 3 .

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • Electricity · mapped topic

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Electricity · mapped topic

  • Chemical synthesis, e.g. chemical bonding or breaking · CPC title

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What does patent US10074814B2 cover?
The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
Who is the assignee on this patent?
Ohio State Innovation Foundation
What technology area does this patent fall under?
Primary CPC classification H01L51/0077. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).