Photon extraction from nitride ultraviolet light-emitting devices

Patent metadata

Field	Value
Publication number	US-10074784-B2
Application number	US-201514596806-A
Country	US
Kind code	B2
Filing date	Jan 14, 2015
Priority date	Jul 19, 2011
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

First claim

What is claimed is:

1. An illumination device comprising:
a ultraviolet (UV) light-emitting semiconductor die;
a rigid lens for extracting light from the light-emitting semiconductor die; and
a layer of encapsulant attaching the rigid lens to the light-emitting semiconductor die,
wherein (i) thickness of the encapsulant is insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the light-emitting semiconductor die, and (ii) the rigid lens has (a) a substantially hemispherical portion and (b) a substantially cylindrical portion disposed between the substantially hemispherical portion and the layer of encapsulant, the substantially cylindrical portion having a straight vertical sidewall.

2. The illumination device of claim 1 , wherein the thickness of the layer of encapsulant is less than approximately 10 μm.

3. The illumination device of claim 1 , wherein the encapsulant is organic.

4. The illumination device of claim 1 , wherein the encapsulant comprises silicone.

5. The illumination device of claim 1 , wherein the rigid lens is inorganic.

6. The illumination device of claim 1 , wherein the rigid lens comprises at least one of fused silica, quartz, or sapphire.

7. The illumination device of claim 1 , wherein the rigid lens and the encapsulant are both substantially transparent to light emitted by the light-emitting semiconductor die.

8. The illumination device of claim 1 , wherein the layer of encapsulant is disposed on a surface of the light-emitting semiconductor die, the surface being at least one of roughened, textured, or patterned.

9. The illumination device of claim 1 , wherein indices of refraction of the rigid lens and the encapsulant are approximately equal to each other.

10. The illumination device of claim 1 , wherein, for light having a wavelength of approximately 260 nm, the index of refraction of the rigid lens is approximately 1.5 and the index of refraction of the encapsulant is approximately 1.4.

11. The illumination device of claim 1 , wherein the light-emitting semiconductor die is a light-emitting diode die.

12. The illumination device of claim 1 , wherein the light-emitting semiconductor die is a laser die.

13. The illumination device of claim 1 , wherein a radius of the substantially cylindrical portion of the rigid lens is at least twice an edge length or diameter of the light-emitting semiconductor die.

14. The illumination device of claim 1 , wherein the semiconductor die emits light having a wavelength less than 300 nm.

15. The illumination device of claim 1 , wherein the thickness of the layer of encapsulant is less than approximately 5 μm.

16. The illumination device of claim 1 , wherein the substantially cylindrical portion of the rigid lens degrades a photon extraction efficiency of the illumination device.

17. The illumination device of claim 1 , wherein the substantially cylindrical portion of the rigid lens has a thickness greater than 0.5 mm.

18. The illumination device of claim 1 , wherein the substantially cylindrical portion of the rigid lens has a thickness greater than 1 mm.

19. An illumination device comprising:
a ultraviolet (UV) light-emitting semiconductor die;
a rigid lens for extracting light from the light-emitting semiconductor die; and
a layer of encapsulant attaching the rigid lens to the light-emitting semiconductor die,
wherein (i) a thickness of the encapsulant is less than approximately 10 μm, and (ii) the rigid lens has (a) a substantially hemispherical portion and (b) a substantially cylindrical portion disposed between the substantially hemispherical portion and the layer of encapsulant, the substantially cylindrical portion having a straight vertical sidewall.

20. The illumination device of claim 19 , wherein the thickness of the layer of encapsulant is less than approximately 5 μm.

21. The illumination device of claim 19 , wherein the substantially cylindrical portion of the rigid lens degrades a photon extraction efficiency of the illumination device.

22. The illumination device of claim 19 , wherein the substantially cylindrical portion of the rigid lens has a thickness greater than 0.5 mm.

23. The illumination device of claim 19 , wherein the substantially cylindrical portion of the rigid lens has a thickness greater than 1 mm.

24. A method of operating an illumination device, the method comprising:
providing an illumination device comprising:
a ultraviolet (UV) light-emitting semiconductor die,
a rigid lens for extracting light from the light-emitting semiconductor die, and
a layer of encapsulant attaching the rigid lens to the light-emitting semiconductor die, wherein (i) a thickness of the encapsulant is less than approximately 10 μm, and (ii) the rigid lens has (a) a substantially hemispherical portion and (b) a substantially cylindrical portion disposed between the substantially hemispherical portion and the layer of encapsulant, the substantially cylindrical portion having a straight vertical sidewall; and

operating the light-emitting semiconductor die for at least 1000 hours to expose the rigid lens and the layer of encapsulant to UV light,
wherein, after operation of the light-emitting semiconductor die, (i) a transmittance of the layer of encapsulant decreases by at least 10%, and (ii) a transmittance of the rigid lens decreases by no more than 1%.

Assignees

• Schowalter Leo J
• Chen Jianfeng
• Grandusky James R
• Crystal Is Inc

Inventors

• Schowalter Leo J
• Chen Jianfeng
• Grandusky James R

Classifications

• H01L33/22

  Electricity · mapped topic

• H01L33/54

  Electricity · mapped topic

• H01L33/58 Primary

  Electricity · mapped topic

• H01L33/405

  Electricity · mapped topic

• H01L33/56

  Electricity · mapped topic