Solid-state image pickup unit and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10074697-B2
Application number	US-201715581317-A
Country	US
Kind code	B2
Filing date	Apr 28, 2017
Priority date	Jan 16, 2013
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

First claim

What is claimed is:

1. An imaging device comprising:
a photoelectric converter including an organic photoelectric conversion element;
a transfer transistor coupled to the photoelectric converter;
a floating diffusion region coupled to the transfer transistor;
an amplification transistor coupled to the floating diffusion region;
a reset transistor coupled to the transfer transistor;
a semiconductor substrate, wherein at least part of the amplification transistor and at least part of the reset transistor are disposed in the semiconductor substrate; and
a multilayer wiring layer between the semiconductor substrate and the organic photoelectric conversion element,
wherein a first part of the transfer transistor includes at least a portion of an oxide semiconductor layer; and
wherein a second part of the transfer transistor is disposed in the multilayer wiring layer.

2. The imaging device according to claim 1 , wherein the organic photoelectric conversion element includes a buffer layer, and wherein the oxide semiconductor layer is coupled to the organic photoelectric conversion element.

3. The imaging device according to claim 1 , wherein the oxide semiconductor layer includes at least one of indium (In), gallium (Ga), and zinc (Zn).

4. The imaging device according to claim 1 , wherein the semiconductor substrate includes a first photoelectric conversion region.

5. The imaging device according to claim 4 , wherein
the semiconductor substrate includes a second photoelectric conversion region,
at least a portion of the second photoelectric conversion region is located between the first photoelectric conversion region and the organic photoelectric conversion element,
the first photoelectric conversion region is configured to convert a red light,
the second photoelectric conversion region is configured to convert a blue light, and
the organic photoelectric conversion element is configured to convert a green light.

6. The imaging device according to claim 1 , wherein the floating diffusion region is coupled to the reset transistor.

7. The imaging device according to claim 1 , further comprising:
a selection transistor coupled to the amplification transistor, wherein at least a part of the selection transistor is disposed in the semiconductor substrate, and
a signal line coupled to the selection transistor.

8. The imaging device according to claim 1 , further comprising an upper electrode over the organic photoelectric conversion element.

9. The imaging device according to claim 1 , further comprising a light-shielding layer over a part of the organic photoelectric conversion element.

10. The imaging device according to claim 1 , further comprising an ultraviolet-cut filter over the organic photoelectric conversion element.

11. The imaging device according to claim 1 , wherein the second part of the transfer transistor includes a gate electrode between the semiconductor substrate and the oxide semiconductor layer.

12. The imaging device according to claim 11 ,
wherein a portion of the multilayer wiring layer is disposed between the gate electrode of the transfer transistor and the oxide semiconductor layer.

13. The imaging device according to claim 1 , wherein the oxide semiconductor layer includes a lower electrode, the floating diffusion region, and an active region.

14. An imaging device comprising:
an organic photoelectric conversion layer;
an electrode overlapping with the organic photoelectric conversion layer;
an oxide semiconductor layer between the organic photoelectric conversion layer and the electrode;
an amplification transistor;
a floating diffusion region coupled to the electrode;
a reset transistor coupled to the floating diffusion region;
a semiconductor substrate, wherein at least part of the amplification transistor and at least part of the reset transistor are disposed in the semiconductor substrate; and
a multilayer wiring layer between the semiconductor substrate and the organic photoelectric conversion layer,
wherein the electrode is configured to transfer a carrier from the organic photoelectric conversion layer to the amplification transistor via the oxide semiconductor layer; and
wherein the electrode is disposed in the multilayer wiring layer at a position that is closer to the oxide semiconductor layer than the semiconductor substrate.

15. The imaging device according to claim 14 , wherein the organic photoelectric conversion layer includes a buffer layer, and wherein the oxide semiconductor layer is coupled to the organic photoelectric conversion layer.

16. The imaging device according to claim 14 , wherein the oxide semiconductor layer includes at least one of indium (In), gallium (Ga), and zinc (Zn).

17. The imaging device according to claim 14 , wherein the semiconductor substrate includes a first photoelectric conversion region.

18. The imaging device according to claim 17 , wherein
the semiconductor substrate includes a second photoelectric conversion region,
at least a portion of the second photoelectric conversion region is located between the first photoelectric conversion region and the organic photoelectric conversion layer,
the first photoelectric conversion region is configured to convert a red light,
the second photoelectric conversion region is configured to convert a blue light, and
the organic photoelectric conversion layer is configured to convert a green light.

19. The imaging device according to claim 17 ,
wherein a portion of the multilayer wiring layer is disposed between the electrode and the oxide semiconductor layer.

20. The imaging device according to claim 14 , wherein the floating diffusion region is coupled to the amplification transistor and the electrode, wherein the electrode transfers the carrier from the organic photoelectric conversion layer to the amplification transistor via the oxide semiconductor layer and the floating diffusion region.

21. The imaging device according to claim 20 , wherein a part of the floating diffusion region is included in the oxide semiconductor layer.

22. The imaging device according to claim 21 , further comprising:
a selection transistor coupled to the amplification transistor, wherein at least part of the selection transistor is disposed in the semiconductor substrate; and
a signal line coupled to the selection transistor.

23. The imaging device according to claim 14 , further comprising an upper electrode over the organic photoelectric conversion layer.

24. The imaging device according to claim 14 , further comprising a light-shielding layer over a part of the organic photoelectric conversion layer.

25. The imaging device according to claim 14 , further comprising an ultraviolet-cut filter over the organic photoelectric conversion layer.

26. The imaging device according to claim 14 , wherein the electrode is a gate electrode of a transfer transistor.

27. The imaging device according to claim 14 , further comprising a transfer transistor including a part of the oxide semiconductor layer and the electrode.

28. The imaging device according to claim 14 , wherein the oxide semiconductor layer includes a lower electrode, the floating diffusion region and an active region.

Assignees

• Sony Corp
• Sony Semiconductor Solutions Corp

Inventors

• Yamaguchi Tetsuji

Classifications

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/63

  applied to dark current · CPC title

• H01L27/307 Primary

  Electricity · mapped topic