Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10074648-B2
Application number	US-201715718749-A
Country	US
Kind code	B2
Filing date	Sep 28, 2017
Priority date	Nov 15, 2016
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A method of manufacturing a semiconductor device includes: implanting charged particles into a first range and a second range in a semiconductor substrate from at least one of a first surface of the semiconductor substrate and a second surface of the semiconductor substrate located on an opposite side of the first surface so as to increase crystal defect densities in the first range and the second range; implanting n-type impurities into the first range from the first surface so as to make a region amorphous, the region being in the first range and disposed at the first surface; irradiating the first surface with first laser after the implantation of the charged particles and the implantation of the n-type impurities so as to heat the first range and the second range; and crystallizing the region which has been made amorphous in or after the irradiation of the first laser.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device including a diode, the method comprising:
implanting charged particles into a first range and a second range in a semiconductor substrate from at least one of a first surface of the semiconductor substrate and a second surface of the semiconductor substrate located on an opposite side of the first surface so as to increase crystal defect densities in the first range and the second range;
implanting n-type impurities into the first range from the first surface so as to make a region amorphous by changing the region from crystal state to amorphous state, the region being in the first range and disposed at the first surface;
irradiating the first surface with a first laser after the implantation of the charged particles and the implantation of the n-type impurities so as to heat the first range and the second range, wherein the crystal defect density in the second range decreases more than the crystal defect density in the first range in the irradiation of the first laser so that a distribution is obtained after the irradiation of the first laser where the crystal defect density in the second range is lower than the crystal defect density in the first range; and
crystalizing the region which has been made amorphous in or after the irradiation of the first laser.

2. The method of claim 1 , wherein the crystallization comprises irradiating the first surface with second laser having a smaller wavelength than the first laser so as to heat the first range.

3. The method of claim 1 , wherein a diode is formed in the first range, and
an IGBT is formed in the second range.

4. The method of claim 1 , wherein the charged particles are electrons.

Assignees

• Toyota Motor Co Ltd

Inventors

• Hosokawa Hiroshi
• Iwasaki Shinya
• Nishiwaki Tsuyoshi
• Imai Atsushi
• Oki Shuhei

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P36/00

  Gettering within semiconductor bodies · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title