Capacitor

Patent metadata

Field	Value
Publication number	US-10074478-B2
Application number	US-201615224781-A
Country	US
Kind code	B2
Filing date	Aug 1, 2016
Priority date	Aug 6, 2015
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A capacitor that includes a conductive porous base material; an electrode layer; a dielectric layer between the conductive porous base material and the electrode layer; and at least one silicon-containing layer between the dielectric layer and the electrode layer.

First claim

What is claimed is:

1. A capacitor comprising:
a conductive porous base material;
an electrode layer;
a dielectric layer between the conductive porous base material and the electrode layer; and
at least one silicon-containing layer between the dielectric layer and the electrode layer,
wherein the conductive porous base material includes a first porosity part and a second porosity part, the first porosity part having a porosity 60% or less of that of the second porosity part.

2. The capacitor according to claim 1 , wherein the electrode layer contains chlorine.

3. The capacitor according to claim 1 , wherein the electrode layer is an atomic deposition layer.

4. The capacitor according to claim 1 , wherein the electrode layer comprises TiN.

5. The capacitor according to claim 4 , wherein the electrode layer contains chlorine.

6. The capacitor according to claim 1 , wherein the dielectric layer comprises Al 2 O 3 .

7. The capacitor according to claim 1 , wherein the at least one silicon-containing layer comprises SiO 2 .

8. The capacitor according to claim 1 , wherein the at least one silicon-containing layer is an atomic deposition layer.

9. The capacitor according to claim 1 , wherein the conductive porous base material is an aluminum porous base material.

10. The capacitor according to claim 1 , wherein the second porosity part has a porosity of 20% or more.

11. The capacitor according to claim 1 , wherein the second porosity part has a porosity of 40% or more.

12. The capacitor according to claim 1 , wherein the second porosity part has a porosity of 20% to 90%.

13. The capacitor according to claim 1 , wherein the second porosity part has a porosity of 60% to 80%.

14. The capacitor according to claim 1 , wherein
the electrode layer comprises TiN and contains chlorine,
the dielectric layer comprises Al 2 O 3 ,
the at least one silicon-containing layer comprises SiO 2 , and
the conductive porous base material is an aluminum porous base material.

15. The capacitor according to claim 1 , further comprising an extension electrode in electrical connection with the electrode layer.

16. The capacitor according to claim 1 , wherein a material of the at least one silicon-containing layer is selected from the group consisting of SiO x , SiTiO x , HfSiO x , ZrSiO x , and SiAlO x , wherein x is greater than 0.

Assignees

• Murata Manufacturing Co

Inventors

• Saeki Hiromasa
• Iwaji Naoki

Classifications

• H01L28/82

  Electricity · mapped topic

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G4/085

  Vapour deposited · CPC title

• H01G4/10

  Metal-oxide dielectrics {(H01G4/085 takes precedence)} · CPC title

• H01G4/008 Primary

  Selection of materials · CPC title