Conductive structure and preparation method therefor

US10073572B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10073572-B2
Application numberUS-201515037583-A
CountryUS
Kind codeB2
Filing dateMay 7, 2015
Priority dateMay 12, 2014
Publication dateSep 11, 2018
Grant dateSep 11, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The present application relates to a conductive structure body and a method for manufacturing the same. A conductive structure body according to an exemplary embodiment of the present application includes a transparent conductive layer, a metal layer which is provided on the transparent conductive layer and includes aluminum, and an aluminum oxynitride layer which is provided on the metal layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A conductive structure body comprising: a transparent conductive layer having a thickness of 15 nm or more and 20 nm or less; a metal layer provided on the transparent conductive layer and including aluminum; and an aluminum oxynitride layer provided on the metal layer, wherein at a high-temperature and humidity atmosphere of 85° C. and relative humidity of 85%, after 210 hours, a rate of increase in surface resistance of the conductive structure body is 1% or less. 2. The conductive structure body of claim 1 , wherein the aluminum oxynitride layer includes aluminum oxynitride represented by AlOxNy, x is more than 0 and 1.5 or less and y is 0.1 or more and 1 or less, x is a content ratio of oxygen atoms in aluminum oxynitride, and y is a content ratio of nitrogen atoms in aluminum oxynitride. 3. The conductive structure body of claim 1 , wherein the thickness of the aluminum oxynitride layer is 10 nm or more and 100 nm or less. 4. The conductive structure body of claim 1 , wherein the transparent conductive layer includes one or more kinds selected from a group consisting of indium oxide, zinc oxide, indium tin oxide, indium zinc oxide, and a transparent conductive polymer. 5. The conductive structure body of claim 1 , wherein the thickness of the metal layer is 0.01 μm or more and 30 μm or less. 6. The conductive structure body of claim 1 , wherein the aluminum oxynitride layer is provided on at least one surface of the conductive line. 7. The conductive structure body of claim 1 , wherein a line width of the metal pattern layer is 0.1 μm or more and 100 μm or less. 8. A conductive structure body comprising: a transparent conductive layer; a metal layer comprising aluminum provided on the transparent conductive layer, wherein the metal layer is a metal pattern layer including one or more conductive lines, wherein a line distance between adjacent conductive lines of the metal pattern layer is 0.1 μm or more and 100 μm or less; and an aluminum oxynitride layer provided on the metal layer. 9. The conductive structure body of claim 1 , wherein surface resistance of the conductive structure body is 0.1 Ω/sq or more and 300 Ω/sq or less. 10. A method for manufacturing the conductive structure body of claim 1 , comprising: preparing a transparent conductive layer; forming a metal layer including aluminum on the transparent conductive layer; and forming an aluminum oxynitride layer on the metal layer. 11. The method of claim 10 , further comprising: individually or simultaneously patterning the metal layer and the aluminum oxynitride layer. 12. The method of claim 10 , wherein in the patterning, the metal layer and the aluminum oxynitride layer are integrally etched by using an etchant. 13. A display device including the conductive structure body of claim 1 . 14. The display device of claim 13 , wherein the conductive structure body is a wire portion of a bezel area.

Assignees

Inventors

Classifications

  • Indexing scheme relating to printed circuits covered by H05K1/00 · CPC title

  • Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

  • Apparatus or processes for manufacturing printed circuits · CPC title

  • Interconnects · CPC title

  • Digitisers structurally integrated in a display · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10073572B2 cover?
The present application relates to a conductive structure body and a method for manufacturing the same. A conductive structure body according to an exemplary embodiment of the present application includes a transparent conductive layer, a metal layer which is provided on the transparent conductive layer and includes aluminum, and an aluminum oxynitride layer which is provided on the metal layer.
Who is the assignee on this patent?
Lg Chemical Ltd
What technology area does this patent fall under?
Primary CPC classification G06F3/044. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).