Electrodeposition system and method incorporating an anode having a back side capacitive element
US-2015376812-A1 · Dec 31, 2015 · US
US10072347B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10072347-B2 |
| Application number | US-201213646401-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 5, 2012 |
| Priority date | Jul 31, 2012 |
| Publication date | Sep 11, 2018 |
| Grant date | Sep 11, 2018 |
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Systems and methods for tin antimony plating are provided. One plating method includes doping a tin (Sn) plating solution with antimony (Sb). One method also includes electroplating a component using the antimony-doped tin plating. The antimony-doped tin plating formed by one method includes between about 1% and about 3% antimony.
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What is claimed is: 1. A plating method comprising: heating a tin (Sn) plating solution to a first temperature between 70° C. and 80° C.; forming an antimony-doped tin plating solution by adding an antimony (Sb)-containing solution to the tin (Sn) plating solution while maintaining the tin (Sn) plating solution at a second temperature that is different than the first temperature; and electroplating substrate with the antimony-doped tin plating solution to form an antimony-doped tin plating on the substrate, wherein the antimony-doped tin plating comprises 1% to 5% antimony by weight of the antimony-doped tin plating, wherein the antimony-doped tin plating reduces tin whisker compared to an undoped tin plating. 2. The plating method of claim 1 , wherein the antimony-doped tin plating comprises 97.6% tin by weight of the antimony-doped tin plating. 3. The method of claim 1 , wherein the second temperature at which the tin (Sn) plating solution is maintained is a temperature other than 75° C. 4. The method of claim 3 , wherein the second temperature at which the tin (Sn) plating solution is maintained is above 75° C. 5. The method of claim 3 , wherein the second temperature at which the tin (Sn) plating solution is maintained is below 75° C.
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