Graphene-metal chalcogenide porous material
US-2016332136-A1 · Nov 17, 2016 · US
US10071360B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10071360-B2 |
| Application number | US-201715433854-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 15, 2017 |
| Priority date | May 11, 2009 |
| Publication date | Sep 11, 2018 |
| Grant date | Sep 11, 2018 |
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The electronic structure of nanowires, nanotubes and thin films deposited on a substrate is varied by doping with electrons or holes. The electronic structure can then be tuned by varying the support material or by applying a gate voltage. The electronic structure can be controlled to absorb a gas, store a gas, or release a gas, such as hydrogen, oxygen, ammonia, carbon dioxide, and the like.
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I claim: 1. A method for storing and releasing a gas comprising: providing a device comprising: a support deposited on a gate wherein the support is in electrical communication with the gate; a material deposited on the support, wherein the support is in electrical communication with the material and wherein the material is separated from the gate by the support; and a power supply comprising the gate in electrical communication with the support and the material, wherein the…
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