Image sensor, optoelectronic system comprising said image sensor, and method for manufacturing said image sensor

Patent metadata

Field	Value
Publication number	US-10070083-B2
Application number	US-201615178857-A
Country	US
Kind code	B2
Filing date	Jun 10, 2016
Priority date	Jun 10, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit. The invention also relates to an optoelectronic system comprising said image sensor and to a method of manufacturing said image sensor.

First claim

The invention claimed is:

1. An image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit for selectively reading out the photo-signals generated by the light impinging on the plurality of pixels,
wherein the image sensor comprises a monolithic three-dimensional integrated circuit comprising an upper level having a first plurality of stacked layers and a lower level having a second plurality of stacked layers, the lower level being disposed underneath the upper level; wherein each pixel of the plurality of pixels comprises:
a photosensitive element arranged at a selected location of said upper level, the photosensitive element comprising a photosensitizing layer associated to a transport layer, the transport layer including at least one layer of a two-dimensional material;
an active device arranged at a selected location of said lower level, the active device comprising at least one layer of a semiconductor material and being operatively coupled to the photosensitive element;
a first intermediate terminal circuitally connected to the photosensitive element; and
an output terminal circuitally connected to the readout circuit;

wherein the image sensor further comprises a dark current suppressing circuit configured to substantially suppress the dark current generated by the photosensitive element of the pixels during an exposure cycle; and
wherein the control unit is arranged, at least partially, in said lower level and configured to, when a given pixel is to be read out, circuitally connect the first intermediate terminal of said pixel:
with the output terminal of said pixel through the dark current suppressing circuit; or
with the output terminal of said pixel and with the dark current suppressing circuit; or
with the output terminal of said pixel, said output terminal being circuitally connected to the readout circuit through the dark current suppressing circuit.

2. The image sensor according to claim 1 , wherein the control unit comprises a biasing circuit for biasing the plurality of pixels;
wherein the dark current suppressing circuit comprises at least one reference element having a dark conductance that substantially matches the dark conductance of the photosensitive element of the pixels; wherein the/each reference element is circuitally connected between a second intermediate terminal and a second biasing terminal, the second biasing terminal being circuitally connected to the biasing circuit;
wherein the photosensitive element of each pixel is circuitally connected between the first intermediate terminal of said pixel and a first biasing terminal provided in said pixel, the first biasing terminal of each pixel being circuitally connected to the biasing circuit;
wherein the biasing circuit is adapted to provide a biasing voltage between the first biasing terminal of the photosensitive element of the pixels of the plurality of pixels and the second biasing terminal of the at least one reference element; and
wherein the control unit is configured to, when a given pixel is to be read out, circuitally connect the first intermediate terminal of said pixel and the second intermediate terminal of a reference element of said at least one reference element with the output terminal of said pixel.

3. The image sensor according to claim 2 , wherein a reference element of the at least one reference element is arranged in said upper level and comprises a transport layer including at least one layer of a two-dimensional material.

4. The image sensor according to claim 3 , wherein said reference element further comprises a photosensitizing layer associated to the transport layer of said reference element.

5. The image sensor according to claim 4 , wherein said reference element further comprises: a first light-blocking layer disposed above the photosensitizing layer and the transport layer of said reference element.

6. The image sensor according to claim 5 , wherein a second light-blocking layer is disposed below the photosensitizing layer and the transport layer of said reference element.

7. The image sensor according to claim 3 , wherein said reference element is arranged below the photosensitive element of a pixel of the plurality of pixels.

8. The image sensor according to claim 2 , wherein a reference element of the at least one reference element is arranged in said lower level and comprises a variable resistor.

9. The image sensor according to claim 1 , wherein the upper level comprises one or more insulating layers associated to the photosensitive element of the plurality of pixels.

10. The image sensor according to claim 9 , wherein at least one pixel of the plurality of pixels comprises:
a back-gate terminal disposed below the photosensitive element of said at least one pixel, between an insulating layer disposed below the photosensitive element of the plurality of pixels and the lower level of the monolithic three-dimensional integrated circuit; and/or
a top-gate terminal disposed above the photosensitive element of said at least one pixel.

11. The image sensor according to claim 1 , wherein at least one pixel of the plurality of pixels comprises a conductive interconnect to couple the active device of said pixel to the photosensitive element of said pixel, the conductive interconnect comprising:
a vertical contact extending from the lower level to the upper level of the monolithic three-dimensional integrated circuit and having a first section connected to the active device of said pixel, said first section being disposed on the at least one semiconductor layer of said active device; and
a lateral contact arranged on said upper level and connected to a second section of the vertical contact;

wherein the lateral contact is ohmically connected to the transport layer of the photosensitive element of said pixel and comprises portion being parallel to the transport layer of said photosensitive element.

12. The image sensor according to claim 1 , wherein the active device of each pixel of the plurality of pixels comprises at least one of: a switch, an amplifier, a filter, a digitizer, a level shifter and a storage element.

13. The image sensor according to claim 1 , wherein the plurality of pixels are grouped into clusters, each cluster comprising one or more pixels; and wherein the photosensitizing layer of the photosensitive element of the one or more pixels of each cluster is sensitive to a different range of the spectrum.

14. The image sensor according to claim 1 , wherein, for at least one pixel of the plurality of pixels, the active device of said at least one pixel is operatively coupled to the first intermediate terminal of the photosensitive element of said at least one pixel.

15. The image sensor according to claim 2 , wherein the plurality of pixels are arranged as a two-dimensional array comprising a plurality of rows and columns; wherein the dark current suppressing circuit comprises as many reference elements as there are columns in the array, each reference element being associated to the pixels of a different column; wherein the active device of each pixel comprises a first switch configured to selectively connect the first intermediate terminal of the pixel to the second intermediate terminal of the reference element associated to the column of said pixel, and a second switch configured to selectively connect the first intermediate terminal of the pixel to its output terminal; and wherein the readout circuit comprises:
as many amplifiers as there are columns, each amplifier having an input terminal, circuitally connected to

Assignees

• Fundacio Inst De Ciencies Fotòniques

Inventors

• Konstantatos Gerasimos
• Koppens Frank
• Goossens Stijn
• Piqueras Juan José
• Pérez Raúl

Classifications

• H04N25/76 Primary

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/14612

  Electricity · mapped topic

• H01L27/14643

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H04N5/378

  Electricity · mapped topic