Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

Patent metadata

Field	Value
Publication number	US-10069280-B2
Application number	US-201514825660-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Feb 13, 2013
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.

First claim

What is claimed is:

1. A semiconductor laser element that is an edge emitting semiconductor laser element, comprising:
a semiconductor layer portion including an active layer, wherein
the semiconductor layer portion has a non-window region including a part of the active layer and extending in a deposition direction, and a window region provided at least in a region adjacent to a facet from which laser light is output, the window region including another part of the active layer, having a higher band gap energy increased through atomic vacancy diffusion than that in the non-window region, and extending in the deposition direction,
the semiconductor layer portion contains a first impurity having a function of suppressing the atomic vacancy diffusion and a second impurity having a function of promoting the atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the active layer, and
the non-window region has a higher content of the first impurity than in the window region, and contains the second impurity.

2. The semiconductor laser element according to claim 1 , wherein the window region has a content of the first impurity lower by 3.5×10 13 cm −2 or more than in the non-window region.

3. The semiconductor laser element according to claim 1 , wherein the first impurity contains at least one of C, Zn, Mg, and Be.

4. The semiconductor laser element according to claim 1 , wherein the second impurity contains at least one of Si, C, Zn, Ge, Sn, S, and Se.

5. The semiconductor laser element according to claim 1 , wherein a thickness between the topmost surface and the active layer is different between the window region and the non-window region.

6. The semiconductor laser element according to claim 1 , further comprising a current injection area that is positioned on the topmost surface of the non-window region in the semiconductor layer portion and is positioned away from the window region.

7. The semiconductor laser element according to claim 1 , wherein the semiconductor layer portion includes a contact layer containing the first impurity as a topmost layer in the non-window region.

8. The semiconductor laser element according to claim 1 , wherein a topmost layer region of the semiconductor layer portion contains the first impurity and the second impurity, and the topmost layer region has a higher content of one of the first impurity and the second impurity with a lower diffusion coefficient.

9. The semiconductor laser element according to claim 1 , wherein a maximum optical power per micrometer of a current injection width is 80 mW/μm or higher.

10. A semiconductor laser module comprising the semiconductor laser element according to claim 1 , and capable of operating without adjusting temperature of the semiconductor laser element.

11. A semiconductor laser element that is an edge emitting semiconductor laser element, comprising:
a semiconductor layer portion including an active layer, wherein
the semiconductor layer portion has a non-window region including a part of the active layer and extending in a deposition direction, and a window region provided at least in a region adjacent to a facet from which laser light is output, the window region including another part of the active layer, having a higher band gap energy increased through atomic vacancy diffusion than that in the non-window region, and extending in the deposition direction,
the semiconductor layer portion contains a first impurity having a function of suppressing the atomic vacancy diffusion and a second impurity having a function of promoting the atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the active layer, and
the window region has a higher content of the second impurity than in the non-window region, and contains the first impurity.

12. The semiconductor laser element according to claim 11 , wherein the window region has a content of the second impurity higher by 3.5×10 13 cm −2 or more than in the non-window region.

13. A semiconductor laser element that is an edge emitting semiconductor laser element, comprising:
a semiconductor layer portion including an active layer, wherein
the semiconductor layer portion has a non-window region including a part of the active layer, and a window region provided at least in a region adjacent to a facet from which laser light is output, the window region including another part of the active layer and having a higher band gap energy increased through atomic vacancy diffusion than that in the non-window region, and
a topmost layer region of the non-window region in the semiconductor layer portion contains a first impurity of a first conductivity type having a function of suppressing atomic vacancy diffusion and a second impurity of the first conductivity type having a function of promoting atomic vacancy diffusion, and the topmost layer region has a higher content of one of the first impurity and the second impurity with a lower diffusion coefficient.

14. The semiconductor laser element according to claim 13 , wherein one of the first impurity and the second impurity with a higher diffusion coefficient has a concentration distribution declining toward the active layer from the topmost surface in the non-window region, and a gross content of the impurity with a higher diffusion coefficient and the impurity with a lower diffusion coefficient in the topmost layer region of the non-window region is more than an amount of the impurity with a lower diffusion coefficient with which the topmost layer region of the window region is doped.

15. The semiconductor laser element according to claim 13 , wherein the first impurity is contained more in the non-window region than in the window region.

16. The semiconductor laser element according to claim 13 , further comprising a current injection area that is positioned on the topmost surface of the non-window region in the semiconductor layer portion and is positioned away from the window region.

Assignees

• Furukawa Electric Co Ltd

Inventors

• Kinugawa Kouhei
• Taniguchi Hidehiro
• Tajima Masafumi

Classifications

• H01S5/22

  having a ridge or stripe structure · CPC title

• G02B6/122

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B6/1342

  using diffusion (diffusion in single crystals C30B31/00; diffusion in glass C03C23/00) · CPC title

• H01S5/3054

  p-doping · CPC title

• H01S5/0287

  Facet reflectivity · CPC title