Organic photosensitive devices with exciton-blocking charge carrier filters

Patent metadata

Field	Value
Publication number	US-10069095-B2
Application number	US-201414782798-A
Country	US
Kind code	B2
Filing date	Apr 14, 2014
Priority date	Apr 12, 2013
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).

First claim

What is claimed is:

1. An organic photosensitive optoelectronic device comprising:
two electrodes in superposed relation comprising an anode and a cathode;
a photoactive region comprising at least one donor material and at least one acceptor material disposed between the two electrodes to form a donor-acceptor heterojunction, wherein the at least one acceptor material has a Lowest Unoccupied Molecular Orbital energy level (LUMO Acc ) and a Highest Occupied Molecular Orbital energy level (HOMO Acc ), and the at least one donor material has a Lowest Unoccupied Molecular Orbital energy level (LUMO don ) and a Highest Occupied Molecular Orbital energy level (HOMO don ); and
an exciton-blocking electron filter disposed between the cathode and the at least one acceptor material, wherein the electron filter comprises a mixture comprising at least one cathode-side wide energy gap material and at least one electron conducting material, and wherein the at least one cathode-side wide energy gap material has:
a Lowest Unoccupied Molecular Orbital energy level (LUMO CS-WG ) smaller than or equal to the LUMO Acc ;
a Highest Occupied Molecular Orbital energy level (HOMO CS-WG )larger than, equal to, or within 0.3 eV smaller than the HOMO Acc ; and
a HOMO CS-WG -LUMO CS-WG energy gap wider than a HOMO Acc -LUMO Acc energy gap;

wherein the at least one electron conducting material has a Lowest Unoccupied Molecular Orbital energy level (LUMO EC ) larger than, equal to, or within 0.2 eV smaller than the LUMO Acc ;and
wherein the mixture comprises the at least one cathode-side wide energy gap material and the at least one electron conducting material at a ratio ranging from 10:1 to 1:10 by volume.

2. The device of claim 1 , wherein the HOMO CS-WG is larger than the HOMO Acc , and the LUMO CS-WG is smaller than the LUMO Acc .

3. The device of claim 1 , wherein the LUMO EC is equal to the LUMO Acc .

4. The device of claim 1 , wherein the LUMO EC is larger than the LUMO Acc .

5. The device of claim 1 , wherein the LUMO CS-WG is smaller than the LUMO EC .

6. The device of claim 5 , wherein the LUMO CS-WG is more than 0.2 eV smaller than the LUMO Acc .

7. The device of claim 1 , wherein the at least one cathode-side wide energy gap material comprises a material chosen from bathocuproine (BCP), bathophenanthroline (BPhen), p-Bis(triphenylsilyl)benzene (UGH-2), (4,4′-N,N′-dicarbazole)biphenyl (CBP), N,N′-dicarbazolyl-3,5-benzene (mCP), poly(vinylcarbazole) (PVK), phenanthrene, alkyl or aryl substituted benzene, triphenylene, aza-substituted triphenylenes, oxidiazoles, triazoles, aryl-benzimidazoles, adamantane, tetraarylmethane, 9,9-dialkyl-fluorene and oligomers thereof, 9,9-diaryl-fluorene and oligomers thereof, spiro-biphenyl, corannulene, alkyl or aryl substituted corannulene, and derivatives thereof.

8. The device of claim 1 , wherein the at least one acceptor material comprises a material chosen from subphthalocyanines, subnaphthalocyanines, dipyrrin complexes, BODIPY complexes, perylenes, naphthalenes, fullerenes, functionalized fullerene derivatives, and derivatives thereof.

9. The device of claim 1 , wherein the at least one electron conducting material comprises a material chosen from subphthalocyanines, subnaphthalocyanines, dipyrrin complexes, BODIPY complexes, perylenes, naphthalenes, fullerenes, functionalized fullerene derivatives, and derivatives thereof.

10. The device of claim 8 , wherein the at least one acceptor material comprises a material chosen from fullerenes and functionalized fullerene derivatives.

11. The device of claim 9 , wherein the at least one electron conducting material comprises a material chosen from fullerenes and functionalized fullerene derivatives.

12. The device of claim 11 , wherein the at least one electron conducting material comprises a material chosen from C 60 and C 70 .

13. The device of claim 1 , wherein the at least one acceptor material and the at least one electron conducting material comprise the same material.

14. The device of claim 13 , wherein the same material is a fullerene or a functionalized fullerene derivative.

15. The device of claim 14 , wherein the same material is C 60 or C 70 .

16. The device of claim 1 , wherein the at least one acceptor material and the at least one electron conducting material are chosen from different fullerenes and functionalized fullerene derivatives.

17. The device of claim 1 , wherein the ratio of the at least one cathode-side wide energy gap material to the at least one electron conducting material is in a range from 4:1 to 1:4 by volume.

18. The device of claim 1 , wherein the ratio of the at least one cathode-side wide energy gap material to the at least one electron conducting material is in a range from 2:1 to 1:2 by volume.

19. The device of claim 1 , further comprising at least one cap layer disposed between the exciton-blocking electron filter and the cathode.

20. The device of claim 19 , wherein the at least one cap layer and the at least one cathode-side wide energy gap material comprise the same material.

21. The device of claim 19 , wherein the at least one cap layer and the at least one electron conducting material comprise the same material.

22. The device of claim 19 , wherein the at least one cap layer, the at least one electron conducting material, and the at least one acceptor material comprise the same material.

23. The device of claim 1 , wherein the donor-acceptor heterojunction is chosen from a bulk heterojunction, planar heterojunction, mixed heterojunction, and planar-mixed heterojunction.

24. The device of claim 19 , wherein the donor-acceptor heterojunction is a planar-mixed heterojunction.

25. The device of claim 1 , further comprising:
an exciton-blocking hole filter disposed between the anode and the at least one donor material, wherein the hole filter comprises a mixture comprising at least one anode-side wide energy gap material and at least one hole conducting material, and wherein the at least one anode-side wide energy gap material has:
a Highest Occupied Molecular Orbital energy level (HOMO AS-WG ) larger than or equal to the HOMO don ;
a Lowest Unoccupied Molecular Orbital energy level (LUMO AS-WG ) smaller than, equal to, or within 0.3 eV larger than the LUMO don ; and
a HOMO AS-WG -LUMO AS-WG energy gap wider than a HOMO Don -LUMO Don energy gap;

and wherein the at least one hole conducting material has a Highest Occupied Molecular Orbital energy level (HOMO HC ) smaller than, equal to, or within 0.2 eV larger than the HOMO don .

26. The device of claim 25 , wherein the HOMO AS-WG is larger than the HOMO don , and the LUMO AS-WG is smaller than the LUMO don .

27. The device of claim 25 , wherein the HOMO HC is equal to the HOMO don .

28. The device of claim 25 , wherein the HOMO HC is smaller than the HOMO don .

29. The device of claim 25 , wherein the HOMO AS-WG is larger than the HOMO HC .

30. The device of claim 25 , wherein the HOMO AS-WG is more than 0.2 eV larger than the HOMO don .

31. The device of claim 7 , wherein the at least one cathode-side wide energy gap material comprises a material chosen from BCP and BPhen.

32. The device of claim 11 , wherein the at least one cathode-side wide energy gap material comprises a material chosen fr

Assignees

• The Regents Of The Univ
• Univ Southern California
• Univ Michigan Regents

Inventors

• Forrest Stephen R
• Xiao Xin
• Zimmerman Jeramy D
• Bergemann Kevin
• Panda Anurag
• Lassiter Brian E
• Thompson Mark E
• Bartynski Andrew N
• Trinh Cong

Classifications

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/0059

  Electricity · mapped topic

• H01L51/006

  Electricity · mapped topic

• H01L51/0046

  Electricity · mapped topic