Target, method for producing the same, memory, and method for producing the same

Patent metadata

Field	Value
Publication number	US-10069066-B2
Application number	US-201615193907-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Jul 28, 2009
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.

First claim

What is claimed is:

1. A method for producing a memory including a plurality of memory devices, the method comprising the steps of:
forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group;
pulverizing the alloy ingot;
forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te; and
forming an ionization layer of the memory devices by sputtering using the target.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Ohba Kazuhiro
• Kamori Yuichi
• Kimura Hitoshi

Classifications

• C23C14/14

  Metallic material, boron or silicon · CPC title

• Y10T428/31678

  Of metal · CPC title

• B22F9/04 Primary

  starting from solid material, e.g. by crushing, grinding or milling ({C22C1/1084 takes precedence}; crushing, grinding or milling, in general, see the relevant subclasses, e.g. B02C) · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C22C1/05

  Mixtures of metal powder with non-metallic powder (C22C1/08 takes precedence) · CPC title