Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam

Patent metadata

Field	Value
Publication number	US-10069031-B2
Application number	US-201715592421-A
Country	US
Kind code	B2
Filing date	May 11, 2017
Priority date	Oct 25, 2012
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

First claim

The invention claimed is:

1. A method of manufacturing a polycrystalline silicon thin film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method of manufacturing a polycrystalline silicon thin film solar cell comprising:
preparing a substrate;
depositing a type 1+ hydrogenated amorphous silicon layer in which the type 1+ hydrogenated amorphous silicon layer is deposited on the substrate by a plasma enhanced chemical vapor deposition method;
depositing a type 1 hydrogenated amorphous silicon layer in which the type 1 hydrogenated amorphous silicon layer is deposited on the type 1+ hydrogenated amorphous silicon layer by a plasma enhanced chemical vapor deposition method;
forming an absorption layer in which the absorption layer is formed by crystallizing the type 1 hydrogenated amorphous silicon layer and the type 1+ hydrogenated amorphous silicon layer by irradiating the type 1 hydrogenated amorphous silicon layer with a linear electron beam;
depositing a type 2 hydrogenated amorphous silicon layer in which the type 2 hydrogenated amorphous silicon layer is deposited on the absorption layer by a plasma enhanced chemical vapor deposition method; and
forming an emitter layer in which the emitter layer is formed by crystallizing the type 2 hydrogenated amorphous silicon layer by irradiating the type 2 hydrogenated amorphous silicon layer with a linear electron beam,
wherein the linear electron beam is irradiated in a linear scan mode in which the linear electron beam is reciprocated within a predetermined distance on the type 1 and type 2 hydrogenated amorphous silicon layers.

2. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein the linear electron beam comprises electrons that are separated from argon ions by a plasma generated from argon gas.

3. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein the substrate is a glass substrate or a metal foil.

4. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein the hydrogenated amorphous silicon layer is doped with boron.

5. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 4 , wherein a doping concentration of boron in the hydrogenated amorphous silicon layer is controlled by the plasma enhanced chemical vapor deposition method.

6. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein the hydrogenated amorphous silicon layer is formed at a process pressure of 100 mtorr to 500 mtorr, a process power of 25 W to 100 W, and a process temperature of 150° C. to 300° C.

7. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein the linear electron beam has an energy of 1.5 keV to 5 keV.

8. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein an irradiation time of the linear electron beam is in a range of 30 seconds to 120 seconds.

9. The method of manufacturing a polycrystalline silicon thin film solar cell of claim 1 , wherein the linear electron beam is irradiated after the hydrogenated amorphous silicon layer is completely formed on a surface of the substrate.

Assignees

• Korea Inst Ind Tech

Inventors

• Jeong Chae Hwan
• Lee Sun Hwa
• Ryu Sang
• Kim Ho Sung
• Boo Seong Jae

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• Y02E10/546

  Polycrystalline silicon PV cells · CPC title

• C23C14/5806 Primary

  Thermal treatment · CPC title

• H01L31/068

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic