Photoconductive antenna

Patent metadata

Field	Value
Publication number	US-10069024-B2
Application number	US-201414538560-A
Country	US
Kind code	B2
Filing date	Nov 11, 2014
Priority date	Jan 3, 2014
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A PCA is provided including: a semiconductor substrate; a metallic antenna, formed on one surface of the semiconductor substrate; and a first pattern structure, formed on the same surface of the semiconductor substrate as the surface on which the metallic antenna is formed, to obstruct surface waves and/or back-scattered waves.

First claim

What is claimed is:

1. A photoconductive antenna (PCA) comprising:
a semiconductor substrate having a first surface and a second surface opposite the first surface;
a first pattern structure, which is formed as a first Fresnel lens or a first Fresnel zone plate on the first surface, the first pattern structure directing waves incident thereon toward the second surface, the first pattern structure functioning as a negative Fresnel lens configured to obstruct emission of electromagnetic waves through the first surface of the semiconductor substrate;
a metallic antenna, which is formed on a center area of the first Fresnel lens or the first Fresnel zone plate, and configured to transmit electromagnetic waves toward the second surface; and
a second pattern structure, which is formed on the second surface of the semiconductor substrate and configured to collimate incident electromagnetic waves having been transmitted through the semiconductor substrate and incident on the second surface, the second pattern structure transmitting the collimated electromagnetic waves to an outside of the second surface, the second pattern structure functioning as a positive Fresnel lens configured to reduce a degree of divergence of electromagnetic waves emitted through the second surface of the semiconductor substrate,
wherein the second surface passes the incident electromagnetic waves to the second pattern structure.

2. The PCA of claim 1 , wherein the first pattern structure is a negative Fresnel lens.

3. The PCA of claim 1 , wherein the second pattern structure is one among a second Fresnel lens and a second Fresnel zone plate.

4. The PCA of claim 1 , wherein at least one among the first pattern structure and the second pattern structure is patterned on the semiconductor substrate by a lithography process or is produced separately from the semiconductor substrate.

5. The PCA of claim 1 , further comprising:
a first array of first groups disposed on the first surface of the semiconductor substrate; and
a second array of a plurality of second pattern structures disposed on the second surface of the semiconductor substrate,
wherein each of the first groups comprises the first pattern structure and the metallic antenna.

6. The PCA of claim 1 , wherein the first pattern structure is patterned on the semiconductor substrate by a lithography process or is produced separately from the semiconductor substrate.

7. The PCA of claim 1 , further comprising:
an array of groups disposed on the first surface of the semiconductor substrate, each of the groups comprising the first pattern structure and the metallic antenna.

8. The PCA of claim 1 , wherein the semiconductor substrate comprises a III-V-group semiconductor material.

9. The PCA of claim 8 , wherein the semiconductor substrate comprises one among gallium arsenide (GaAs), gallium phosphide (GaP), and indium phosphide (InP).

10. The PCA of claim 1 , wherein the metallic antenna is an electromagnetic wave antenna comprising one among dipole electrodes and multi-pole electrodes.

11. The PCA of claim 1 , wherein
the electromagnetic waves incident onto the first pattern structure include at least one among surface-waves and back-scattered waves which are reflected by the second surface, among the electromagnetic waves transmitted by the metallic antenna.

12. The PCA of claim 1 , wherein the first pattern structure includes the first Fresnel lens that is a negative Fresnel lens configured to diffract the electromagnetic waves incident thereon onto the positive Fresnel lens, which is formed on the second surface and configured to collimate the diffracted electromagnetic waves and transmit the collimated electromagnetic waves to the outside of the second surface, and
the electromagnetic waves incident onto the negative Fresnel lens of the first pattern structure include at least one among surface-waves and back-scattered waves reflected by the second surface, among the electromagnetic waves transmitted by the metallic antenna.

13. The PCA of claim 1 , wherein the first Fresnel lens or at least one element of the first Fresnel zone plate is continuous in a circumferential direction with respect to the metallic antenna.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Baik Chanwook
• Kyoung Jisoo
• Cheon Sangmo

Classifications

• G02B5/1876

  Diffractive Fresnel lenses; Zone plates; Kinoforms (G02B5/1842, G02B5/1847 take precedence; optical systems having diffractive correction means G02B27/0037; Fresnel lenses operating by refraction G02B3/08) · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/0304 Primary

  Electricity · mapped topic

• H01L31/085

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic