Array substrate manufacturing method and array substrate

Patent metadata

Field	Value
Publication number	US-10068933-B2
Application number	US-201615031279-A
Country	US
Kind code	B2
Filing date	Feb 29, 2016
Priority date	Feb 14, 2016
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

The present invention provides an array substrate manufacturing method and an array substrate. The array substrate manufacturing method of the present invention uses an organic photoresist material to form a passivation protection layer (90) for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer (90) and a planarization layer (70) to exposure and development so as to obtain a third via (91) that is located above the first drain electrode (62) and a fourth via (92) that is located above the second drain electrode (64) and, thus, compared the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost. The array substrate of the present invention has a simple structure and low manufacturing cost and possesses excellent electrical performance.

First claim

What is claimed is:

1. An array substrate manufacturing method, comprising the following steps:
(1) providing a base plate, depositing a first metal layer on the base plate, and subjecting the first metal layer to a patterning operation to obtain a light shielding layer;
(2) forming a buffer layer on the light shielding layer and the base plate, forming an amorphous layer on the buffer layer, subjecting the amorphous layer to crystallization treatment so as to form a poly silicon layer, applying a photolithographic process to subject the poly silicon layer to a patterning operation to obtain a first poly silicon section located above and corresponding to the light shielding layer and a second poly silicon section that is spaced from the first poly silicon section;
(3) using a mask to subject a middle area of the first poly silicon section to P type light doping to obtain a first channel zone, and then using a mask to subject two opposite end portions of the first poly silicon section to N type heavy doping to obtain N type heavy doping zones at the two ends;
(4) depositing a gate insulation layer on the first poly silicon section, the second poly silicon section, and the buffer layer, depositing a second metal layer on the gate insulation layer, applying a photolithographic process to subject the gate insulation layer and the second metal layer to a patterning operation to obtain a first gate insulation layer and a second gate insulation layer that are in the gate insulation layer and respectively correspond to the middle areas of the first poly silicon section and the second poly silicon section and a first gate electrode and a second gate electrode that are in the second metal layer and respectively located above the first and second gate insulation layers to align with the first and second gate insulation layers;
(5) using the first gate electrode as a mask to subject portions of the first poly silicon section that are located between the first channel zone and the N type heavy doping zones to N type light doping, so as to obtain N type light doping zones, and using a mask to subject two end portions of the second poly silicon section to P type heavy doping so as to obtain P type heavy doping zones at the two ends and a second channel zone between the two P type heavy doping zones;
(6) depositing an interlayer insulation layer on the first gate electrode, the second gate electrode, the first poly silicon section, the second poly silicon section, and the buffer layer, applying a photolithographic process to subject the interlayer insulation layer to a patterning operation so as to form, in the interlayer insulation layer, first vias located above and corresponding to the N type heavy doping zones and second vias located above and corresponding to the P type heavy doping zones;
(7) depositing a third metal layer on the interlayer insulation layer and subjecting the third metal layer to a patterning operation to obtain a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode that are spaced from each other such that the first source electrode and the first drain electrode are respectively connected, through the first vias, to the N type heavy doping zones and the second source electrode and the second drain electrode are respectively connected, through the second vias, to the P type heavy doping zones;
(8) forming a planarization layer on the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, and the interlayer insulation layer; and depositing a first transparent conductive layer on the planarization layer and subjecting the first transparent conductive layer to a patterning operation to obtain a common electrode;
(9) depositing an organic photoresist material on the common electrode and the planarization layer to form a passivation protection layer;
(10) using a mask to subject the passivation protection layer and the planarization layer to exposure and development so as to obtain a third via located above and corresponding to the first drain electrode and a fourth via located above and corresponding to the second drain electrode; and
(11) depositing a second transparent conductive layer on the passivation protection layer and subjecting the second transparent conductive layer to a patterning operation so as to obtain a pixel electrode, wherein the pixel electrode is connected, through the third via and the fourth via, to the first drain electrode and the second drain electrode, respectively.

2. The array substrate manufacturing method as claimed in claim 1 , wherein in step (2), laser annealing is used for the crystallization treatment of the amorphous layer.

3. The array substrate manufacturing method as claimed in claim 1 , wherein step (6) further comprises: subjecting the interlayer insulation layer to dehydrogenation and activation.

4. The array substrate manufacturing method as claimed in claim 3 , wherein rapid thermal annealing is applied for dehydrogenation and activation of the interlayer insulation layer.

5. The array substrate manufacturing method as claimed in claim 1 , wherein in step (9), an evaporation or jet printing process is applied to deposit the organic photoresist material.

6. The array substrate manufacturing method as claimed in claim 1 , wherein step 9 further comprises: subjecting the passivation protection layer to irradiation of ultraviolet light to thin the passivation protection layer 90 so as to increase light transmittability thereof.

7. The array substrate manufacturing method as claimed in claim 1 , wherein the planarization layer is made of a material comprising organic photoresist and the passivation protection layer has a dielectric constant that is around 3-4.

8. The array substrate manufacturing method as claimed in claim 1 , wherein the base plate is a transparent plate; the first metal layer, the second metal layer, the third metal layer are formed of a material comprising one of molybdenum, titanium, aluminum, and copper or a stacked combination of multiple ones thereof; the buffer layer, the first and second gate insulation layers, and the interlayer insulation layer are each a silicon oxide layer, a silicon nitride layer, or a composite layer of stacked silicon oxide layer and silicon nitride layer; and the first transparent conductive layer and the second transparent conductive layer are made of a material comprising a metal oxide.

9. An array substrate manufacturing method, comprising the following steps:
(1) providing a base plate, depositing a first metal layer on the base plate, and subjecting the first metal layer to a patterning operation to obtain a light shielding layer;
(2) forming a buffer layer on the light shielding layer and the base plate, forming an amorphous layer on the buffer layer, subjecting the amorphous layer to crystallization treatment so as to form a poly silicon layer, applying a photolithographic process to subject the poly silicon layer to a patterning operation to obtain a first poly silicon section located above and corresponding to the light shielding layer and a second poly silicon section that is spaced from the first poly silicon section;
(3) using a mask to subject a middle area of the first poly silicon section to P type light doping to obtain a first channel zone, and then using a mask to subject two opposite end portions of the first poly silicon section to N type heavy doping to obtain N type heavy doping zones at the two ends;
(4) depositing a gate insulation layer on the first poly silicon section, the second poly silicon section, and the buffer layer, depositing a second metal layer on the gate insulation layer, applying a photolithographic proce

Assignees

• Wuhan China Star Optoelectronics Technology Co Ltd

Inventors

• Deng si

Classifications

• H10D84/01

  Manufacture or treatment · CPC title

• G02F2202/104

  poly-Si · CPC title

• G02F1/13439

  characterised by their electrical, optical, physical properties; materials therefor; method of making · CPC title

• G02F1/136227

  Through-hole connection of the pixel electrode to the active element through an insulation layer · CPC title

• G02F1/133345 Primary

  Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title