Faradaic energy storage device structures and associated techniques and configurations

Patent metadata

Field	Value
Publication number	US-10068718-B2
Application number	US-201615184847-A
Country	US
Kind code	B2
Filing date	Jun 16, 2016
Priority date	Apr 26, 2013
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

Embodiments of the present disclosure are directed towards Faradaic energy storage device structures and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a substrate having a plurality of holes disposed in a surface of the substrate, the plurality of holes being configured in an array of multiple rows and an active material for Faradaic energy storage disposed in the plurality of holes to substantially fill the plurality of holes. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. A method comprising:
forming a plurality of holes in a surface of a substrate, wherein the substrate is composed of a photosensitive polymer; and
depositing an active material for Faradaic energy storage to substantially fill the plurality of holes, wherein the active material includes a plurality of discrete particles formed of a pseudo-capacitive material in powder form, an electrically conductive additive mixed with the pseudo-capacitive material, and a binder material;
wherein forming the plurality of holes comprises:
patterning the photosensitive polymer using photolithography;
removing portions of the patterned polymer using a development process; and
converting the polymer to an electrically conductive material.

2. The method of claim 1 , wherein depositing the active material comprises depositing the pseudo-capacitive material using one or more of a doctor-blading, drop-casting, spin-casting or vacuum casting technique.

3. The method of claim 1 , further comprising:
forming a barrier liner on material of the substrate in the plurality of holes prior to depositing the active material, wherein the barrier liner includes an electrically conductive material disposed between the material of the substrate and the active material.

4. The method of claim 1 , wherein the active material is a first active material, the method further comprising:
forming an electrolyte coupled with the first active material; and
depositing a second active material, the second active material being coupled with the electrolyte, wherein
the electrolyte is disposed between the first active material and the second active material to conduct ions between the first active material and the second active material, and
the first active material has a standard electrode potential that is different than a standard electrode potential of the second active material.

5. A method comprising:
forming a plurality of holes in a surface of a substrate; and
depositing an active material for Faradaic energy storage to substantially fill the plurality of holes, wherein the active material includes a plurality of discrete particles formed of a pseudo-capacitive material in powder form, an electrically conductive additive mixed with the pseudo-capacitive material, and a binder material, wherein:
the substrate is composed of silicon;
forming the plurality of holes comprises etching the substrate using an anisotropic wet etch process; and
the plurality of holes are configured in an array of multiple rows.

6. The method of claim 2 , wherein depositing the active material comprises depositing the pseudo-capacitive material using one or more of a doctor-blading, drop-casting, spin-casting or vacuum casting technique.

7. The method of claim 2 , further comprising:
forming a barrier liner on material of the substrate in the plurality of holes prior to depositing the active material, wherein the barrier liner includes an electrically conductive material disposed between the material of the substrate and the active material.

8. A method comprising:
forming a first plurality of holes in a surface of a substrate;
depositing an active material for Faradaic energy storage to substantially fill the first plurality of holes, wherein the active material includes a plurality of discrete particles formed of a pseudo-capacitive material in powder form, an electrically conductive additive mixed with the pseudo-capacitive material, and a binder material;
forming a second plurality of holes in the surface of the substrate; and
forming an ion channel between at least a first hole of the first plurality of holes and a second hole of the second plurality of holes;
depositing a second active material in the second plurality of holes; and
depositing an electrolyte in the ion channel, wherein the first active material has a standard electrode potential that is different than a standard electrode potential of the second active material.

9. The method of claim 8 , wherein:
the substrate is composed of metal or semiconductive material;
forming the first plurality of holes comprises etching the substrate; and
the first plurality of holes are configured in an array of multiple rows.

10. The method of claim 9 , wherein the substrate is composed of silicon and forming the first plurality of holes comprises etching the substrate using an anisotropic wet etch process.

11. The method of claim 8 , wherein the substrate is composed of a photosensitive polymer and forming the first plurality of holes comprises:
patterning the photosensitive polymer using photolithography;
removing portions of the patterned polymer using a development process; and
converting the polymer to an electrically conductive material.

12. The method of claim 8 , wherein depositing the active material comprises depositing the pseudo-capacitive material using one or more of a doctor-blading, drop-casting, spin-casting or vacuum casting technique.

13. The method of claim 8 , further comprising:
forming a barrier liner on material of the substrate in the first plurality of holes prior to depositing the active material, wherein the barrier liner includes an electrically conductive material disposed between the material of the substrate and the active material.

Assignees

• Intel Corp

Inventors

• Pande Priyanka
• Pint Cary L
• Liu Yang
• Jin Wei
• Holzwarth Charles
• Gardner Donald

Classifications

• C23F1/02

  Local etching · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• H01G11/22

  Electrodes · CPC title

• Y02E60/13

  Energy storage using capacitors · CPC title

• H01G11/84 Primary

  Processes for the manufacture of hybrid or EDL capacitors, or components thereof · CPC title