High dielectric film
US-2015368413-A1 · Dec 24, 2015 · US
US10068706B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10068706-B2 |
| Application number | US-201715403838-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 11, 2017 |
| Priority date | Oct 16, 2008 |
| Publication date | Sep 4, 2018 |
| Grant date | Sep 4, 2018 |
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A multilayer polymer dielectric film includes a stack of coextruded, alternating first dielectric layers and second dielectric layers that receive electrical charge. The first dielectric layers include a first polymer material and the second dielectric layers include a second polymer material different from the first polymer material. The first polymer material has a permittivity greater than the second polymer material. The second polymer material has a breakdown strength greater than the first polymer material. Adjoining first dielectric layers and second dielectric layers define an interface between the layers that delocalizes electrical charge build-up in the layers. The stack has substantially the crystallographic symmetry before and during receiving electrical charge.
Opening claim text (preview).
Having described the invention, the following is claimed: 1. A capacitor comprising: a stack of coextruded, alternating first dielectric layers and second dielectric layers, the capacitor receiving and storing an electrical charge, the first dielectric layers comprising a first polymer material and the second dielectric layers comprising a second polymer material different from the first polymer material, the first polymer material having a permittivity greater than the second polymer material, and the second polymer material having a breakdown strength greater than the first polymer material, the stack having substantially the same crystallographic symmetry before and during the capacitor receiving the electrical charge. 2. The capacitor of claim 1 , the stack comprising about 4 to about 500,000 alternating first dielectric layers and second dielectric layers. 3. The capacitor of claim 1 , the first dielectric layers and second dielectric layers being fabricated by multilayer coextrusion forced assembly processes. 4. The capacitor of claim 1 , the stack being axially oriented in at least one direction substantially parallel to a surface of the film at a ratio effective to increase the breakdown strength of the film. 5. The capacitor of claim 1 , at least one of the first polymer layers and the second polymer layers further comprising a filler to improve the dielectric properties of the first polymer material and/or the second polymer material. 6. The capacitor of claim 1 , the stack of coextruded first dielectric layers and second dielectric layers having a breakdown voltage that is greater than the breakdown voltage of the first dielectric layers and the breakdown voltage of the second dielectric layers. 7. The capacitor of claim 1 , the stack of coextruded first dielectric layers and second dielectric layers having an electrical conductivity that is greater than the electrical conductivity of the first dielectric layers and the electrical conductivity of the second dielectric layers. 8. The capacitor of claim 1 , the stack of coextruded first dielectric layers and second dielectric layers having an energy density that is greater than the energy density of the first dielectric layers and the energy density of the second dielectric layers. 9. The capacitor of claim 1 , the stack further comprising tie layers interposed between the first and second dielectric layers. 10. The capacitor of claim 9 , wherein the first dielectric layers and the tie layers define first interfaces between the layers and the second dielectric layers and tie layers define second interfaces between the layers such that the stack exhibits at least one of a higher breakdown strength and a higher energy density than the breakdown strength and energy density of the first and second dielectric layers. 11. The capacitor of claim 10 , wherein the first interfaces and the second interfaces constitute interphase regions in which the tie layers are interdiffused into the first dielectric layers and the second dielectric layers, respectively.
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