Magnetic field sensor and associated method that can establish a measured threshold value and that can store the measured threshold value in a memory device

Patent metadata

Field	Value
Publication number	US-10066965-B2
Application number	US-201715466894-A
Country	US
Kind code	B2
Filing date	Mar 23, 2017
Priority date	Jan 6, 2012
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A magnetic field sensor includes a magnetic field sensing element configured to generate a magnetic field signal; a measured threshold module configured to generate a measured threshold signal in accordance with positive peaks and negative peaks of the magnetic field signal; a memory device coupled to receive and configured to store, at each one of a plurality of storage times, a respective value of the measured threshold signal; a threshold module coupled to receive from the memory device, at a calculation time, a stored value of the measured threshold signal and configured to generate a calculated threshold value; and a comparison circuit coupled to receive the calculated threshold value and to receive the magnetic field signal. The comparison circuit is configured to compare the calculated threshold value with the magnetic field signal to generate an output signal. A corresponding method is associated with the magnetic field sensor.

First claim

What is claimed is:

1. A magnetic field sensor, comprising:
a magnetic field sensing element responsive to a changing magnetic field and configured to generate a magnetic field signal having an amplitude;
a measured threshold module configured to generate a measured threshold signal in accordance with positive peaks and negative peaks of the magnetic field signal;
a memory device coupled to receive and configured to store, at each one of a plurality of storage times, a respective value of the measured threshold signal;
a threshold module coupled to receive from the memory device, at a calculation time, a stored value of the measured threshold signal stored at a selected one of the plurality of storage times prior to the calculation time and configured to process the received stored value of the measured threshold signal to generate a calculated threshold value; and
a comparison circuit coupled to receive the calculated threshold value and also coupled to receive a signal representative of the magnetic field signal, wherein the comparison circuit is configured to compare the calculated threshold value with a signal representative of the magnetic field signal to generate an output signal.

2. The magnetic field sensor of claim 1 , wherein the respective value of the measured threshold signal stored at each one of the plurality of storage times is associated with a predetermined temperature.

3. The magnetic field sensor of claim 1 , wherein the magnetic field sensor is powered off between the selected one of the plurality of storage times and the calculation time, and wherein the memory device is nonvolatile and re-writable.

4. The magnetic field sensor of claim 1 , wherein the memory device is further configured to store, at each one of the plurality of storage times, a respective safety bit indicative of a proper storage of the respective value of the measured threshold signal stored at each respective one of the plurality of storage times.

5. The magnetic field sensor of claim 4 , wherein the memory device is further configured to store, at times proximate to each one of the plurality of storage times, a respective backup value of the measured threshold signal.

6. The magnetic field sensor of claim 5 , wherein, if the stored safety bit, stored at the selected one of the plurality of storage times, is in a first state, the threshold module is configured to generate, at the calculation time, the calculated threshold value in accordance with the received stored value of the measured threshold signal, and wherein, if the stored safety bit stored at the selected one of the plurality of storage times is in a second different state, the threshold module is configured to receive, at the calculation time, the stored backup value of the measured threshold signal, each stored at a time proximate to the selected one of the plurality of storage times prior to the calculation time, and the threshold module is configured to generate the calculated threshold value in accordance with the received stored backup value of the received stored backup value of the measured threshold signal.

7. The magnetic field sensor of claim 4 , wherein, if the stored safety bit, stored at the selected one of the plurality of storage times, is in a first state, the threshold module is configured to generate the calculated threshold value in accordance with the received stored value of the measured threshold signal, and wherein, if the stored safety bit stored at the selected one of the plurality of storage times is in a second different state, the threshold module is configured to generate the calculated threshold value as a predetermined value.

8. The magnetic field sensor of claim 1 , further comprising a diagnostic module configured to compare the calculated threshold value and a stored value of the measured threshold signal stored at one of the plurality of storage times, and configured to generate a fail value if the calculated threshold value and the stored value of the measured threshold signal differ by more than a predetermined amount.

9. The magnetic field sensor of claim 1 , wherein the memory device is further coupled to receive and configured to store, at each one of the plurality of storage times, a respective value of an amplitude signal, the amplitude signal representative of the amplitude of the magnetic field signal, wherein the magnetic field sensor further comprises a diagnostic module configured to compare the amplitude signal and a stored value of the amplitude signal stored at one of the plurality of storage times, and configured to generate a fail value if the amplitude signal and the stored value of the amplitude signal differ by more than a predetermined amount.

10. A method of sensing a magnetic field with a magnetic field sensor, comprising:
generating a magnetic field signal having an amplitude in response to a magnetic field;
generating a measured threshold signal in accordance with positive and negative peaks of the magnetic field signal;
storing, at each one of a plurality of storage times, a respective value of the measured threshold signal;
receiving, at a calculation time, a stored value of the measured threshold signal, each stored at a selected one of the plurality of storage times prior to the calculation time;
processing the received stored value of the measured threshold signal to generate a calculated threshold value; and
comparing the calculated threshold value with a signal representative of the magnetic field signal to generate an output signal.

11. The method of claim 10 , wherein the respective value of the measured threshold signal stored at each one of the plurality of storage times is associated with a predetermined temperature.

12. The method of claim 10 , further comprising powering off between the selected one of the plurality of storage times and the calculation time, and wherein the storing is nonvolatile and re-writable.

13. The method of claim 10 , further comprising:
storing, at each one of the plurality of storage times, a respective safety bit indicative of a proper storage of the respective value of the measured threshold signal stored at each one of the plurality of storage times.

14. The method of claim 13 , further comprising:
storing, at times proximate to each one of the plurality of storage times, a respective backup value of the measured threshold signal.

15. The method of claim 14 , further comprising:
receiving the stored backup value of the measured threshold signal, wherein, if the stored safety bit stored at the selected one of the plurality of storage times is in a first state, the generating the calculated threshold value comprises:
generating the calculated threshold value in accordance with the received stored value of the measured threshold signal, and wherein, if the stored safety bit stored at the selected one of the plurality of storage times is in a second different state, the generating the calculated threshold value comprises:
generating the calculated threshold value in accordance with received stored backup value of the measured threshold signal.

16. The method of claim 14 , wherein, if the stored safety bit stored at the selected one of the plurality of storage times is in a first state, the generating the calculated threshold value comprises:
generating the calculated threshold value in accordance with the received stored value of the measured threshold signal, and wherein, if the stored safety bit stored at the selected one of the plurality of storage times is in a second different state, the generating the calculated threshold value compri

Assignees

• Allegro Microsystems Llc

Inventors

• Foletto Andrea
• Cisar Peter
• Shoemaker Eric

Classifications

• G01D18/008

  with calibration coefficients stored in memory · CPC title

• G01D5/2449

  using hard-stored calibration data · CPC title

• G01D5/247 Primary

  using time shifts of pulses · CPC title

• G01P3/488

  delivered by variable reluctance detectors · CPC title

• G01D5/145 Primary

  influenced by the relative movement between the Hall device and magnetic fields (see G01R33/06) · CPC title