Chemically strengthened bond between thermally stable polycrystalline hard materials and braze material

Patent metadata

Field	Value
Publication number	US-10066443-B2
Application number	US-201414890820-A
Country	US
Kind code	B2
Filing date	Dec 22, 2014
Priority date	Dec 22, 2014
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

Chemical methods, optionally in combination with physical methods, may be used to increase the strength of the bond formed by a braze material between a polycrystalline material and a hard composite. Such polycrystalline materials brazed to hard composites may be found in various wellbore tools include drill bit cutters. An exemplary method may include forming a bonding layer on a bonding surface of a polycrystalline material body that comprises a hard material, the bonding surface opposing a contact surface of the polycrystalline material body, and the bonding layer substantially formed by a [111] crystal structure of the hard material, a [100] crystal structure of the hard material, or a combination thereof; and brazing the bonding layer to a hard composite using a braze material.

First claim

The invention claimed is:

1. A method of making a drill bit cutter, comprising:
forming, by chemical vapor deposition, a bonding layer on a bonding surface of a polycrystalline material body that comprises a hard material, the bonding surface opposing a contact surface of the polycrystalline material body, and the bonding layer substantially formed by the chemical vapor deposition to have a [111] crystal structure of the hard material, a [100] crystal structure of the hard material, or a combination thereof; and
brazing the bonding layer to a hard composite using a braze material to make the drill bit cutter.

2. The method of claim 1 further comprising:
forming the bonding layer to have a thickness of 10 microns to 250 microns at the bonding surface.

3. The method of claim 1 further comprising:
masking the bonding surface of the polycrystalline material body before forming the bonding layer; and
removing the mask after forming the bonding layer and before brazing the bonding layer to the hard composite.

4. The method of claim 1 , wherein the hard material is diamond, the bonding layer is substantially formed by the [111] crystal structure of the diamond, and forming the bonding layer involves:
treating the bonding surface with a hydrogen plasma in the presence of oxygen and a carbon-containing gas at 600° C. to 1100° C. at a total pressure 30 torr or greater and a gas composition of 200 parts to 250 parts hydrogen, 0.5 parts to 3 parts oxygen, and 3 parts to 8 parts carbon-containing gas.

5. The method of claim 1 , wherein the hard material is diamond, the bonding layer is substantially formed by the [100] crystal structure of the diamond, and forming the bonding layer involves:
treating the bonding surface with a hydrogen plasma in the presence of oxygen and a carbon-containing gas at 600° C. to 1100° C. at a total pressure less than 30 torr and a gas composition of 200 parts to 250 parts hydrogen, 0.5 parts to 3 parts oxygen, and 3 parts to 8 parts carbon-containing gas.

6. The method of claim 1 , wherein the hard material is cubic boron nitride.

7. A drilling assembly comprising:
a drill string extendable from a drilling platform and into a wellbore;
a pump fluidly connected to the drill string and configured to circulate a drilling fluid into the drill string and through the wellbore; and
a drill bit attached to an end of the drill string, the drill bit having a matrix bit body and a plurality of cutting cutters according to claim 6 coupled to an exterior portion of the matrix bit body.

8. The method of claim 1 , wherein the hard material is silicon carbide.

9. A method of making a drill bit cutter, comprising:
depositing a refractory nitride layer on a bonding surface of a polycrystalline material body that comprises a hard material, the bonding surface opposing a contact surface of the polycrystalline material body;
forming, by chemical vapor deposition, a bonding layer on the refractory nitride layer, the bonding layer substantially formed by the chemical vapor deposition to have a [111] crystal structure of the hard material, a [100] crystal structure of the hard material, or a combination thereof; and
brazing the bonding layer to a hard composite using a braze material to make the drill bit cutter.

10. The method of claim 9 further comprising:
forming the bonding layer to have a thickness of 10 microns to 250 microns at the bonding surface.

11. The method of claim 9 further comprising:
masking the refractory nitride layer before forming the bonding layer; and
removing the mask after forming the bonding layer and before brazing the bonding layer to the hard composite.

12. The method of claim 9 , wherein the hard material is diamond, the bonding layer is substantially formed by the [111] crystal structure of the diamond, and forming the bonding layer involves:
treating the refractory nitride layer with a hydrogen plasma in the presence of oxygen and a carbon-containing gas at 600° C. to 1100° C. at a total pressure 30 torr or greater and a gas composition of 200 parts to 250 parts hydrogen, 0.5 parts to 3 parts oxygen, and 3 parts to 8 parts carbon-containing gas.

13. The method of claim 9 , wherein the hard material is diamond, the bonding layer is substantially formed by the [100] crystal structure of the diamond, and forming the bonding layer involves:
treating the refractory nitride layer with a hydrogen plasma in the presence of oxygen and a carbon-containing gas at 600° C. to 1100° C. at a total pressure less than 30 torr and a gas composition of 200 parts to 250 parts hydrogen, 0.5 parts to 3 parts oxygen, and 3 parts to 8 parts carbon-containing gas.

14. The method of claim 9 , wherein the hard material is cubic boron nitride.

15. The method of claim 9 , wherein the hard material is silicon carbide.

Assignees

• Halliburton Energy Services Inc
• Haliburton Energy Services Inc

Inventors

• Saini Gagan
• Liang Qi

Classifications

• B23K2101/002

  Drill-bits · CPC title

• B23K35/302

  Cu as the principal constituent · CPC title

• C04B2237/365

  Silicon carbide · CPC title

• B23K2103/52

  Ceramics · CPC title

• B23K1/19

  taking account of the properties of the materials to be soldered · CPC title