Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-10066298-B2
Application number	US-201615011033-A
Country	US
Kind code	B2
Filing date	Jan 29, 2016
Priority date	Feb 25, 2014
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes non-simultaneously performing:
forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by continuously supplying a precursor gas containing the first element, carbon, and a halogen element and having a chemical bond of the first element and carbon to the substrate in a process chamber while keeping an exhaust system sealed and confining the precursor gas within the process chamber, under a condition in which the precursor gas is pyrolyzed and at least a part of the chemical bond of the first element and carbon included in the precursor gas is maintained without being broken;
exhausting the precursor gas in the process chamber through the exhaust system;
forming a second solid layer containing the first element, the carbon and the second element by supplying a first reaction gas containing the second element, which is thermally activated under a non-plasma condition, to the substrate in the process chamber to modify the first solid layer; and
exhausting the first reaction gas in the process chamber through the exhaust system,
wherein the precursor gas is continuously supplied for an entire time of sealing the exhaust system.

2. The method of claim 1 , wherein in the act of forming the first solid layer, an exhaust flow path opening/closing unit installed in the exhaust system is fully closed for the entire time of the act of forming the first solid layer.

3. The method of claim 1 , wherein in the act of forming the first solid layer, at least a part of the chemical bond of the first element and carbon included in the precursor gas is introduced into the first solid layer while the at least a part of the chemical bond of the first element and carbon is maintained without being broken.

4. The method of claim 1 , wherein the first solid layer is a deposition layer in which the first element and carbon are deposited.

5. The method of claim 1 , wherein a thickness of the first solid layer is greater than a thickness of a chemisorption layer which is formed by a chemisorption of the precursor gas being saturated.

6. The method of claim 1 , wherein the act of forming the first solid layer is performed under a condition in which a gas phase reaction occurs.

7. The method of claim 1 , wherein, in the act of forming the second solid layer, the first reaction gas is supplied to the substrate in the process chamber, under a condition in which at least a part of the chemical bond of the first element and carbon included in the first solid layer is maintained without being broken.

8. The method of claim 1 , wherein the cycle further includes:
supplying a second reaction gas containing a third element to the substrate in the process chamber; and
exhausting the second reaction gas in the process chamber through the exhaust system,
wherein the cycle is performed a predetermined number of times to form a film containing the first element, the second element, the third element and carbon on the substrate.

9. The method of claim 1 , wherein the cycle further includes non-simultaneously performing:
forming a third solid layer by supplying a second reaction gas containing a third element to the substrate in the process chamber to modify the second solid layer; and
exhausting the second reaction gas in the process chamber through the exhaust system,
wherein the cycle is performed a predetermined number of times to form a film containing the first element, the second element, the third element and carbon.

10. The method of claim 1 , wherein the precursor gas has at least two chemical bonds of the first element and carbon in one molecule of the precursor gas.

11. The method of claim 1 , wherein the first reaction gas comprises at least one selected from a group consisting of a nitrogen-containing gas, a carbon-containing gas, a nitrogen- and carbon-containing gas, an oxygen-containing gas, a boron-containing gas, and a boron-, nitrogen- and carbon-containing gas.

12. The method of claim 1 , wherein the cycle is performed a predetermined number of times under a non-plasma condition.

13. The method of claim 1 , wherein in the act of forming the first solid layer, an internal pressure of the process chamber is continuously increased for the entire time of the act of forming the first solid layer.

14. The method of claim 1 , wherein an internal pressure of the process chamber in the act of forming the first solid layer is higher than an internal pressure of the process chamber in the act of forming the second solid layer.

15. The method of claim 1 , wherein, in the act of forming the second solid layer, the first reaction gas is supplied into the process chamber while keeping the exhaust system opened, and then the exhaust system is closed to confine the first reaction gas within the process chamber.

16. The method of claim 1 , wherein, in the act of forming the second solid layer, the first reaction gas is supplied into the process chamber while keeping the exhaust system opened, and then the exhaust system is closed while supplying the first reaction gas into the process chamber to confine the first reaction gas within the process chamber.

Assignees

• Hitachi Int Electric Inc

Inventors

• Yamamoto Ryuji
• Shimamoto Satoshi
• Hirose Yoshiro

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• C23C16/52 Primary

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title