Semiconductor device

Patent metadata

Field	Value
Publication number	US-10062747-B2
Application number	US-201615573200-A
Country	US
Kind code	B2
Filing date	Jun 14, 2016
Priority date	Jul 10, 2015
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure portion and a drain electrode and is divided into multiple parts in an arrangement direction in which the gate structure portion and the drain electrode are arranged. A second Al mixed crystal ratio of the second AlGaN layer is less than a first Al mixed crystal ratio of the first AlGaN layer. Accordingly, the semiconductor device is a normally-off-type device and is capable of restricting a decrease of a breakdown voltage and an increase of an on-resistance.

First claim

The invention claimed is:

1. A semiconductor device comprising
a horizontal switching device that includes:
a substrate formed of a semi-insulator or a semiconductor;
a channel forming layer disposed on the substrate and having a hetero-junction structure of a GaN layer and an AlGaN layer, the GaN layer providing an electron transit layer, the AlGaN layer providing an electron donor layer, and the channel forming layer having a recess at which the AlGaN layer is partially removed;
a gate structure portion having a gate insulation film and a gate electrode, the gate insulation film being disposed in the recess, and the gate electrode being disposed on the gate insulation film; and
a source electrode and a drain electrode disposed on the channel forming layer, the gate structure portion being positioned between the source electrode and the drain electrode,

the horizontal switching device generating a current between the source electrode and the drain electrode by a channel formed at a surface layer portion of the GaN layer positioned below a bottom of the recess when a 2-dimensional electron gas carrier is induced in the GaN layer adjacent to an interface between the GaN layer and the AlGaN layer and a voltage is applied to the gate electrode, wherein
the AlGaN layer includes a first AlGaN layer and a second AlGaN layer,
the first AlGaN layer has a first Al mixed crystal ratio determining a 2-dimensional electron gas concentration of the first AlGaN layer,
the second AlGaN layer is positioned between the gate structure portion and the drain electrode,
the second AlGaN layer is divided into multiple parts in an arrangement direction in which the gate structure portion and the drain electrode are arranged,
the second AlGaN layer has a second Al mixed crystal ratio determining a 2-dimensional electron gas concentration of the second AlGaN layer, and
the second Al mixed crystal ratio is less than the first Al mixed crystal ratio so that the second AlGaN layer induces a minus fixed charge.

2. The semiconductor device according to claim 1 , wherein
the gate structure portion, the source electrode and the drain electrode are provided in a line pattern extending in one direction parallel to a surface of the substrate, and
the second AlGaN layer is provided in the line pattern extending in the one direction.

3. The semiconductor device according to claim 1 , wherein
the gate structure portion, the source electrode and the drain electrode are provided in a line pattern extending in one direction parallel to a surface of the substrate, and
the second AlGaN layer is provided in a dot pattern.

4. The semiconductor device according to claim 3 , wherein
the second AlGaN layer is provided in the dot pattern in which the second AlGaN layer is divided into multiple parts along a line extending in the one direction.

5. The semiconductor device according to claim 3 , wherein
the second AlGaN layer is provided in the dot pattern in which the second AlGaN layer is arranged in a staggered pattern.

6. The semiconductor device according to claim 1 , wherein
the AlGaN layer includes a third AlGaN layer positioned between the first AlGaN layer and the second AlGaN layer, and
the third AlGaN layer has a third Al mixed crystal ratio that is greater than the first Al mixed crystal ratio of the first AlGaN layer and greater than the second Al mixed crystal ratio of the second AlGaN layer.

7. The semiconductor device according to claim 1 , comprising:
an operation region in which the horizontal switching device is provided and that operates as an element; and
an element separation region that is positioned out of the operation region, wherein
an area of the second AlGaN layer is increased toward the element separation region.

8. The semiconductor device according to claim 1 , wherein
the 2-dimensional electron gas concentration of the first AlGaN layer is increased as the first Al mixed crystal ratio is increased, and
the 2-dimensional electron gas concentration of the second AlGaN layer is increased as the second Al mixed crystal ratio is increased.

9. The semiconductor device according claim 1 , wherein
the second AlGaN layer is divided into the multiple parts in the arrangement direction of the gate structure portion and the drain electrode, and
the multiple parts are apart from each other.

10. The semiconductor device according to claim 1 , wherein
the first AlGaN layer is disposed on the GaN layer, and
the second AlGaN layer is disposed on the first AlGaN layer.

Assignees

• Denso Corp

Inventors

• Eum Youngshin
• Oyama Kazuhiro
• Higuchi Yasushi
• Hoshi Shinichi

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H01L29/66431

  Electricity · mapped topic

• H01L29/2003

  Electricity · mapped topic

• H01L29/66462

  Electricity · mapped topic

• H01L29/812

  Electricity · mapped topic