Stacked image sensor with shield bumps between interconnects

Patent metadata

Field	Value
Publication number	US-10062722-B2
Application number	US-201615284961-A
Country	US
Kind code	B2
Filing date	Oct 4, 2016
Priority date	Oct 4, 2016
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

First claim

What is claimed is:

1. An image sensor, comprising:
a pixel array including plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die;
a plurality of pixel support circuits arranged in a second semiconductor die, wherein the first and second semiconductor dies are stacked and coupled together;
a plurality of interconnect lines coupled between the first and second semiconductor dies, wherein each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines; and
a plurality of shield bumps disposed proximate to corners of the pixel cells and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array and such that there is an absence of a shield bump between adjacent interconnect lines in a same row of the pixel array causing a coupling capacitance between said adjacent interconnect lines in the same row of the pixel array,
wherein every other pixel cell in two rows of the pixel array are read out at a time such that there is said one of the plurality of shield bumps disposed between said interconnect lines the diagonal that are coupled to said every other pixel cell in said two rows of the pixel array that are read out at the time.

2. The image sensor of claim 1 , wherein each one of the plurality of shield bumps is disposed between adjacent interconnect lines along the diagonal of the pixel array is adapted to shield a coupling capacitance between said adjacent interconnect lines along the diagonal of the pixel array.

3. The image sensor of claim 1 , wherein each one of the plurality of shield bumps is one of a dummy interconnect line, a power supply line, or a ground line.

4. The image sensor of claim 1 , wherein each one of the plurality of pixel cells comprises a photodiode disposed in first semiconductor die and coupled to the corresponding interconnect line coupled to said one of the plurality of pixel cells.

5. The image sensor of claim 4 , wherein each one of the plurality of pixel cells further comprises a transfer transistor disposed in the first semiconductor die and coupled between said photodiode and the corresponding interconnect line coupled to said one of the plurality of pixel cells.

6. The image sensor of claim 1 , wherein each one of the plurality of pixel cells is a shared pixel comprising a plurality of photodiodes disposed in the first semiconductor die and coupled to the corresponding interconnect line coupled to said one of the plurality of pixel cells.

7. The image sensor of claim 6 , wherein each shared pixel further comprises a plurality of transfer transistors, wherein each one of the plurality of transfer transistors is disposed in the first semiconductor die and coupled between one of the plurality of photodiodes and the corresponding interconnect line coupled to said one of the plurality of pixel cells.

8. The image sensor of claim 1 , wherein each one of the pixel support circuits comprises:
an amplifier transistor disposed in second semiconductor die and coupled to the corresponding interconnect line coupled to said one of the plurality of pixel cells; and
a row select transistor disposed in second semiconductor die and coupled between an output of the amplifier transistor and an output bitline.

9. An imaging system, comprising:
a sensor wafer including a first semiconductor layer, wherein the sensor wafer includes a pixel array including plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor layer;
a logic wafer including a second semiconductor layer, wherein the logic wafer includes a plurality of pixel support circuits arranged in a second semiconductor layer, wherein the sensor wafer and the logic wafer are stacked and coupled together;
a plurality of interconnect lines coupled between the pixel array and the plurality of pixel support circuits, wherein each one of the plurality of pixel cells in the sensor wafer is coupled to a corresponding one of the plurality of pixel support circuits in the logic wafer through a corresponding one plurality of interconnect lines; and
a plurality of shield bumps disposed proximate to corners of the pixel cells and between the sensor wafer and logic wafer such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array and such that there is an absence of a shield bump between adjacent interconnect lines in a same row of the pixel array causing a coupling capacitance between said adjacent interconnect lines in the same row of the pixel array,
wherein every other pixel cell in two rows of the pixel array are read out at a time such that there is said one of the plurality of shield bumps disposed between said interconnect lines along the diagonal that are coupled to said every other pixel cell in said two rows of the pixel array that are read out at the time.

10. The imaging system of claim 9 , wherein the logic wafer further includes:
control circuitry disposed in the second semiconductor layer and coupled to the pixel array to control operation of the pixel array;
readout circuitry disposed in the second semiconductor layer and coupled to the plurality of pixel support circuits to readout image data from the pixel array; and
function circuitry disposed in the second semiconductor layer and coupled to the readout circuitry to store the image data readout from the pixel array.

11. The imaging system of claim 9 , wherein each one of the plurality of shield bumps is disposed between adjacent interconnect lines along the diagonal of the pixel array is adapted to shield a coupling capacitance between said adjacent interconnect lines along the diagonal of the pixel array.

12. The imaging system of claim 9 , wherein each one of the plurality of shield bumps is one of a dummy interconnect line, a power supply line, or a ground line.

13. The imaging system of claim 9 , wherein each one of the plurality of pixel cells comprises a photodiode disposed in first semiconductor layer and coupled to the corresponding interconnect line coupled to said one of the plurality of pixel cells.

14. The imaging system of claim 13 , wherein each one of the plurality of pixel cells further comprises a transfer transistor disposed in the first semiconductor layer and coupled between said photodiode and the corresponding interconnect line coupled to said one of the plurality of pixel cells.

15. The imaging system of claim 9 , wherein each one of the plurality of pixel cells is a shared pixel comprising a plurality of photodiodes disposed in the first semiconductor layer and coupled to the corresponding interconnect line coupled to said one of the plurality of pixel cells.

16. The imaging system of claim 15 , wherein each shared pixel further comprises a plurality of transfer transistors, wherein each one of the plurality of transfer transistors is disposed in the first semiconductor layer and coupled between one of the plurality of photodiodes and the corresponding interconnect line coupled to said one of the plurality of pixel cells.

17. The imaging system of claim 9 , wherein each one of the pixel support circuits comprises:
an amplifier transistor disposed in second semiconductor die and coupled to the corresponding interconnect line coupled to said one of the plurality of pixel cells; a

Assignees

• Omnivision Tech Inc

Inventors

• Manabe Sohei
• Mabuchi Keiji
• Goto Takayuki
• Venezia Vincent
• Fowler Boyd Albert
• Webster Eric A G

Classifications

• H01L27/14632

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic

• H01L27/14636

  Electricity · mapped topic

• H01L27/14643

  Electricity · mapped topic

• H01L27/14634 Primary

  Electricity · mapped topic