Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution
US-2015348833-A1 · Dec 3, 2015 · US
Etchant, etching method using same, and method for manufacturing semiconductor substrate product
US10062580B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10062580-B2 |
| Application number | US-201615245593-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2016 |
| Priority date | Feb 26, 2014 |
| Publication date | Aug 28, 2018 |
| Grant date | Aug 28, 2018 |
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Abstract
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Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.
First claim
Opening claim text (preview).
What is claimed is: 1. An etching method comprising: applying an etchant which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water to a semiconductor substrate, wherein the organic cation is selected from the group consisting of lauryl pyridinium, cetyl pyridinium, lauryl trimethyl ammonium, hexadecyl trimethyl ammonium, octadecyl trimethyl ammonium, didecyl dimethyl ammonium, dilauryl dimethyl ammonium, distearyl dimethyl ammonium, dioleyl dimethyl ammonium, lauryl dimethyl benzyl ammonium and cetyl trimethyl ammonium. 2. The etching method according to claim 1 , wherein the concentration of the organic cation is in a range of 0.000001 mol/L to 0.1 mol/L. 3. The etching method according to claim 1 , wherein a semiconductor substrate has a first layer that includes germanium and a second layer that includes a metal species other than germanium. 4. The etching method according to claim 1 , wherein the second layer is a layer including at least one metal species selected from nickel platinum, titanium, nickel, platinum, tungsten, and cobalt. 5. The etching method according to claim 3 , wherein a ratio (R2/R1) of an etching rate R2 of the second layer to an etching rate R1 of the first layer is 10 or greater. 6. A method for manufacturing a semiconductor substrate product, wherein a semiconductor substrate product is manufactured through the etching method according to claim 1 .
Assignees
Inventors
Classifications
by chemical etching · CPC title
Silicon, silicon germanium or germanium · CPC title
- H10P50/667Primary
by liquid etching only · CPC title
Electricity · mapped topic
- H01L21/32134Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10062580B2 cover?
- Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.
- Who is the assignee on this patent?
- Fujifilm Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/667. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 28 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).