Semiconductor device inspection device and semiconductor device inspection method

Patent metadata

Field	Value
Publication number	US-10060975-B2
Application number	US-201715400064-A
Country	US
Kind code	B2
Filing date	Jan 6, 2017
Priority date	Nov 6, 2012
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

A semiconductor device inspection system ( 1 ) includes a laser beam source ( 2 ), for emitting light, an optical sensor ( 12 ) for detecting the light reflected by the semiconductor device ( 10 ) from the light and outputting a detection signal, a frequency band setting unit ( 16 ) for setting a measurement frequency band and a reference frequency band with respect to the detection signal, a spectrum analyzer ( 15 ) for generating a measurement signal and a reference signal from the detection signals in the measurement frequency band and the reference frequency band, and a signal acquisition unit ( 17 ) for calculating a difference between the measurement signal and the reference signal to acquire an analysis signal. The frequency band setting unit ( 16 ) sets the reference frequency band to a frequency domain in which a level of the detection signal is lower than a level obtained by adding 3 decibels to a white noise level serving as a reference.

First claim

The invention claimed is:

1. A system for a semiconductor device serving as a device under test, the system comprising:
a light source configured to generate light to be irradiated to the semiconductor device;
a light detector configured to detect reflected light that is reflected from the semiconductor device and to output a detection signal;
a frequency setting unit configured to set a first frequency and a second frequency;
a signal generating unit electrically coupling the frequency setting unit and configured to generate a first signal based on the detection signal in the first frequency and generate a second signal based on the detection signal in the second frequency;
a controller configured to generate a first image based on the first signal and generate a second image based on the second signal; and
a tester unit electrically coupling the frequency setting unit and configured to apply an electrical signal having a first modulation frequency and a second modulation frequency to the semiconductor device; wherein the frequency setting unit is configured to set the first frequency based on the first modulation frequency and the second frequency based on the second modulation frequency.

2. The system according to claim 1 , wherein the signal generating unit includes a first spectrum analyzer and a second spectrum analyzer.

3. The system according to claim 1 , wherein the signal generating unit includes a first lock-in amplifier and a second lock-in amplifier.

4. The system according to claim 1 , wherein the first frequency includes a frequency N times the first modulation frequency, wherein N is a natural number.

5. The system according to claim 1 , wherein the second frequency includes a frequency N times the second modulation frequency, wherein N is a natural number.

6. The system according to claim 1 , further comprising: a signal acquisition unit electrically coupling the signal generating unit and configured to generate an analysis signal based on the first signal and the second signal.

7. The system according to claim 6 , wherein the controller is configured to generate a third image based on the analysis signal.

8. A method for a semiconductor device serving as a device under test, the method comprising:
irradiating the semiconductor device with light output by a light source;
detecting reflected light that is reflected from the semiconductor device and outputting a detection signal;
setting a first frequency and a second frequency;
generating a first signal based on the detection signal in the first frequency and generating a second signal based on the detection signal in the second frequency by a signal generating unit;
generating a first image based on the first signal and generating a second image based on the second signal by a controller; and
applying an electrical signal having a first modulation frequency and a second modulation frequency to the semiconductor device; wherein the setting sets the first frequency based on the first modulation frequency and the second frequency based on the second modulation frequency.

9. The method according to claim 8 , wherein the first frequency includes a frequency N times the first modulation frequency, wherein N is a natural number.

10. The method according to claim 8 , wherein the second frequency includes a frequency N times the second modulation frequency, wherein N is a natural number.

11. The method according to claim 8 , further comprising: applying heat having a modulation frequency; wherein the setting sets the first frequency based on the modulation frequency.

12. The method according to claim 11 , wherein the first frequency includes a frequency N times the modulation frequency, wherein N is a natural number.

13. The method according to claim 8 , further comprising: generating an analysis signal based on the first signal and the second signal.

14. The method according to claim 13 , further comprising: generating a third image based on the analysis signal.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Nakamura Tomonori

Classifications

• G01R31/2601

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G01R31/2851

  Testing of integrated circuits [IC] (G01R31/317 takes precedence; testing individual devices G01R31/26; testing printed circuits G01R31/2801) · CPC title

• G01R31/311 Primary

  of integrated circuits {(G01R31/31728 takes precedence)} · CPC title

• G01N21/95607

  using a comparative method · CPC title

• G01R1/071

  containing electro-optic elements · CPC title