Micropowder and method for manufacturing the same

US10059631B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10059631-B2
Application numberUS-201615386749-A
CountryUS
Kind codeB2
Filing dateDec 21, 2016
Priority dateNov 15, 2016
Publication dateAug 28, 2018
Grant dateAug 28, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for manufacturing micropowder, comprising: (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at a first temperature of 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at a second temperature of 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the first temperature is higher than the second temperature, wherein the micropowder includes a silicon carbide core covered by a carbon film. 2. The method as claimed in claim 1 , wherein step (b) is repeated several times. 3. The method as claimed in claim 2 , wherein the step (b) is repeated several times for a total of 60 to 120 minutes. 4. The method as claimed in claim 1 , wherein the vacuum and non-oxygen condition in step (a) has a pressure of 0.1 Torr to 50 Torr. 5. The method as claimed in claim 1 , wherein the non-oxygen condition in step (b) includes an argon atmosphere with a pressure of 400 torr to 760 Torr. 6. The method as claimed in claim 1 , wherein the carbon precursor comprises graphite, active carbon, asphalt, resin, alkane, alkene, or a combination thereof. 7. The method as claimed in claim 1 , wherein the silicon precursor comprises silicon powder, silicon oxide powder, tetraethyl silicate, or a combination thereof.

Assignees

Inventors

Classifications

  • Single-crystal growth by condensing evaporated or sublimed materials · CPC title

  • Pyrolysis, carbonisation or auto-combustion reactions · CPC title

  • Treatment time · CPC title

  • Carbides · CPC title

  • characterised by specific heating conditions during heat treatment · CPC title

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What does patent US10059631B2 cover?
A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen cond…
Who is the assignee on this patent?
Ind Tech Res Inst
What technology area does this patent fall under?
Primary CPC classification C04B35/62839. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 28 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).