Method For Producing An Electrode For A Lithium Accumulator And Associated Electrode
US-2015303462-A1 · Oct 22, 2015 · US
US10059631B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10059631-B2 |
| Application number | US-201615386749-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2016 |
| Priority date | Nov 15, 2016 |
| Publication date | Aug 28, 2018 |
| Grant date | Aug 28, 2018 |
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A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing micropowder, comprising: (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at a first temperature of 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at a second temperature of 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the first temperature is higher than the second temperature, wherein the micropowder includes a silicon carbide core covered by a carbon film. 2. The method as claimed in claim 1 , wherein step (b) is repeated several times. 3. The method as claimed in claim 2 , wherein the step (b) is repeated several times for a total of 60 to 120 minutes. 4. The method as claimed in claim 1 , wherein the vacuum and non-oxygen condition in step (a) has a pressure of 0.1 Torr to 50 Torr. 5. The method as claimed in claim 1 , wherein the non-oxygen condition in step (b) includes an argon atmosphere with a pressure of 400 torr to 760 Torr. 6. The method as claimed in claim 1 , wherein the carbon precursor comprises graphite, active carbon, asphalt, resin, alkane, alkene, or a combination thereof. 7. The method as claimed in claim 1 , wherein the silicon precursor comprises silicon powder, silicon oxide powder, tetraethyl silicate, or a combination thereof.
Single-crystal growth by condensing evaporated or sublimed materials · CPC title
Pyrolysis, carbonisation or auto-combustion reactions · CPC title
Treatment time · CPC title
Carbides · CPC title
characterised by specific heating conditions during heat treatment · CPC title
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