Integrated electroacoustic MEMS transducer with improved sensitivity and manufacturing process thereof

Patent metadata

Field	Value
Publication number	US-10057684-B2
Application number	US-201715636423-A
Country	US
Kind code	B2
Filing date	Jun 28, 2017
Priority date	Nov 30, 2016
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

An electroacoustic MEMS transducer, having a substrate of semiconductor material; a through cavity in the substrate; a back plate carried by the substrate through a plate anchoring structure, the back plate having a surface facing the through cavity; a fixed electrode, extending over the surface of the back plate; a membrane of conductive material, having a central portion facing the fixed electrode and a peripheral portion fixed to the surface of the back plate through a membrane anchoring structure; and a chamber between the membrane and the back plate, peripherally delimited by the membrane anchoring structure.

First claim

The invention claimed is:

1. An electroacoustic MEMS transducer, comprising:
a substrate of semiconductor material;
a through cavity in the substrate;
a plate anchoring structure;
a back plate coupled to the substrate by the plate anchoring structure, the back plate having a surface facing the through cavity;
a fixed electrode coupled to the surface of the back plate;
a membrane anchoring structure;
a membrane of conductive material, the membrane having a central portion facing the fixed electrode and a peripheral portion fixed to the surface of the back plate by the membrane anchoring structure such that the membrane anchoring structure is in contact with the membrane and is between the back plate and the membrane; and
a chamber between the membrane and the back plate, the chamber being peripherally delimited by the membrane anchoring structure.

2. The electroacoustic MEMS transducer according to claim 1 , wherein the semiconductor material is silicon, wherein the plate anchoring structure and the membrane anchoring structure are silicon nitride, and wherein the membrane and the fixed electrode are silicon.

3. The electroacoustic MEMS transducer according to claim 1 , wherein the membrane and the fixed electrode are of semiconductor material.

4. The electroacoustic MEMS transducer according to claim 1 , wherein the membrane anchoring structure is arranged externally with respect to the fixed electrode.

5. The electroacoustic MEMS transducer according to claim 1 , wherein the back plate and the fixed electrode are perforated, and wherein the membrane has an equalization opening in the central portion.

6. An electroacoustic MEMS transducer, comprising:
a substrate of semiconductor material;
a through cavity in the substrate;
a plate anchoring structure;
a back plate coupled to the substrate by the plate anchoring structure, the back plate having a surface facing the through cavity;
a fixed electrode coupled to the surface of the back plate;
a membrane of conductive material, the membrane having a central portion facing the fixed electrode and a peripheral portion; and
a membrane anchoring structure, the membrane being fixed to the surface of the back plate by the membrane anchoring structure, the membrane anchoring structure comprising at least two bumps extending at a distance from each other along the peripheral portion of the membrane and accommodating an insulating structure in between the at least two bumps, the insulating structure accommodating a membrane contact of conductive material, the membrane contact being in direct contact with the membrane.

7. The electroacoustic MEMS transducer according to claim 6 , wherein the back plate, the plate anchoring structure, and the membrane anchoring structure are a monolithic structural layer of insulating material, wherein the plate anchoring structure surrounds the membrane anchoring structure.

8. The electroacoustic MEMS transducer according to claim 7 , comprising a decoupling structure arranged between the back plate and the plate anchoring structure.

9. The electroacoustic MEMS transducer according to claim 8 , wherein the decoupling structure comprises an elastic region.

10. The electroacoustic MEMS transducer according to claim 9 , wherein the elastic region comprises a plurality of structural layer portions extending at different levels and with a substantially zigzag pattern.

11. The electroacoustic MEMS transducer according to claim 1 , wherein at least the central portion of the membrane is arranged to completely face the cavity.

12. The electroacoustic MEMS transducer according to claim 1 , wherein the electroacoustic MEMS transducer is a microphone.

13. An electronic device, comprising:
a microprocessor control unit; and
an acoustic MEMS transducer, the acoustic MEMS transducer including:
a substrate of semiconductor material, the substrate including a through cavity;
a back plate coupled to the substrate, the back plate including a fixed electrode facing the through cavity;
a membrane having a central portion and a peripheral portion, the peripheral portion coupled to the back plate, the central portion facing the through cavity;
a membrane anchoring structure extending from the back plate, an end of the membrane anchoring structure in contact with the peripheral portion of the membrane; and
a chamber between the membrane and the back plate, the chamber being peripherally delimited by the membrane anchoring structure.

14. The electronic device according to claim 13 , wherein the peripheral portion of the membrane is coupled to the back plate at a location that faces the through cavity.

15. The electronic device according to claim 13 , wherein the peripheral portion of the membrane is coupled to the back plate at a location that is outward of the through cavity.

16. The electronic device according to claim 13 , wherein the back plate has a surface facing the substrate, the acoustic MEMS transducer further including a membrane anchoring structure, wherein the peripheral portion of the membrane is coupled to the surface of the substrate by the membrane anchoring structure.

17. A process comprising:
forming a first sacrificial layer on a body of semiconductor material;
forming a membrane on the first sacrificial layer;
forming a second sacrificial layer on the membrane;
forming at least one plate anchor opening and at least one membrane anchor opening in the second sacrificial layer by removing at least one first selective portion and at least one second selective portion of the second sacrificial layer, the at least one plate anchor opening surrounding the at least one membrane anchor opening;
forming a fixed electrode on the second sacrificial layer over the membrane;
forming a structural layer of insulating material, the structural layer entering the at least one plate anchor opening and the at least one membrane anchor opening and forming at least one plate anchoring structure and at least one membrane anchoring structure;
patterning the structural layer to form a back plate;
forming a through cavity in the body, the through cavity facing the membrane; and
removing exposed portions of the first and second sacrificial layers and releasing the membrane and forming a chamber between the membrane and the fixed electrode.

18. The process according to claim 17 , comprising:
before forming a fixed electrode, forming at least one membrane electrical contact opening in the second sacrificial layer by removing at least one third selective portion of the second sacrificial layer; and
forming at least one membrane electrical contact region in the membrane electrical contact openings and in direct electrical contact with the membrane.

19. The process according to claim 18 , wherein forming the at least one membrane electrical contact opening is carried out separately from forming the at least one plate anchor opening and the at least one membrane anchor opening.

20. The process according to claim 18 , comprising, simultaneously with forming the at least one membrane electrical contact opening, forming at least one plate electrical contact opening in the second sacrificial layer by removing at least one fourth selective portion of the second sacrificial layer and, simultaneously with forming the at least one membrane electrical contact region, forming at least one plate electrical contact region in the plate electrical contact opening.

21. The process according to claim 17 , further comprising forming an el

Assignees

• St Microelectronics Srl

Inventors

• Perletti Matteo
• Losa Stefano
• Tentori Lorenzo
• Turi Maria Carolina

Classifications

• H04R7/18 Primary

  at the periphery · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• B81B2203/0315

  Cavities · CPC title

• H04R19/04

  Microphones (H04R19/01 takes precedence) · CPC title

• H04R19/005 Primary

  using semiconductor materials · CPC title