Cone-shaped holes for high efficiency thin film solar cells

Patent metadata

Field	Value
Publication number	US-10056510-B2
Application number	US-201514728658-A
Country	US
Kind code	B2
Filing date	Jun 2, 2015
Priority date	May 10, 2012
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.

First claim

What is claimed is:

1. A method for fabricating a substrate for photovoltaic device applications, comprising:
applying a resist on a first surface of the substrate of a photovoltaic device;
lithographically exposing and developing the resist to create a pattern of cross-linked areas in the resist;
depositing a metal on the pattern and on exposed portions of the substrate;
removing the pattern of cross-linked areas in the resist by a lift-off process to leave the metal on the substrate in the exposed portions of the substrate;
dry etching the substrate using the metal on the substrate as an etch mask to form a plurality of hole shapes in the substrate, the plurality of hole shapes each having a hole opening extending from a first surface of the substrate and narrowing with depth into the substrate, wherein each of the hole openings has a pitch which changes depending on a position of the hole opening on the substrate;
removing the metal to expose flat areas separating the hole shapes on the first surface; and
depositing a photovoltaic device stack on the substrate.

2. The method as recited in claim 1 , wherein dry etching includes tuning a reactive ion etch (RIE) to form a tapered structure in the hole openings.

3. The method as recited in claim 2 , wherein tuning includes regulating pressure between about 100 mTorr and about 300 mTorr and power between about 200 Watts to about 400 Watts.

4. The method as recited in claim 1 , wherein the plurality of hole shapes includes an opening dimension of 500 nm or greater.

5. The method as recited in claim 1 , wherein depositing a metal includes evaporative deposition of at least one of Aluminum or Chromium.

6. The method as recited in claim 1 , further comprising: forming a photovoltaic device stack on the substrate.

7. The method as recited in claim 6 , wherein forming the photovoltaic device stack on the substrate includes:
forming a first conductive layer disposed on the substrate;
forming a p-i-n or n-i-p stack disposed on the first conductive layer; and
forming a second conductive layer formed on the p-i-n or n-i-p stack.

8. The method as recited in claim 1 , wherein the pitch increases as position from an origin point increases.

9. The method as recited in claim 1 , wherein the pitch alternately changes across the substrate between at least two pitch sizes.

10. A method for fabricating a photovoltaic device, comprising:
applying a resist on a first surface of a substrate for the photovoltaic device;
lithographically exposing and developing the resist to create a pattern of cross-linked areas in the resist;
depositing a metal on the pattern and on exposed portions of the substrate;
removing the pattern of cross-linked areas in the resist by a lift-off process to leave the metal on the substrate in the exposed portions of the substrate;
dry etching the substrate using the metal on the substrate as an etch mask to form a plurality of hole shapes in the substrate, the plurality of hole shapes each having a hole opening extending from a first surface of the substrate and narrowing with depth into the substrate, wherein each of the hole openings has a pitch which changes depending on a position of the hole opening on the substrate;
removing the metal to expose flat areas separating the hole shapes on the first surface; and
depositing a photovoltaic device stack on the substrate.

11. The method as recited in claim 10 , wherein dry etching includes tuning a reactive ion etch (RIE) to form a tapered structure in the hole openings, and the tuning includes regulating pressure between about 100 mTorr and about 300 mTorr and power between about 200 Watts to about 400 Watts.

12. The method as recited in claim 10 , wherein the plurality of hole shapes include an opening dimension of 500 nm or greater.

13. The method as recited in claim 10 , wherein forming the photovoltaic device stack on the substrate includes:
forming a first conductive layer disposed on the substrate;
forming a p-i-n or n-i-p stack disposed on the first conductive layer; and
forming a second conductive layer formed on the p-i-n or n-i-p stack.

14. The method as recited in claim 10 , wherein the pitch increases as position from an origin point increases.

15. The method as recited in claim 10 , wherein the pitch alternately changes across the substrate between at least two pitch sizes.

Assignees

• IBM

Inventors

• Fogel Keith E
• Hong Augustin J
• Kim Jeehwan
• Sadana Devendra K

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• Y10T428/24479

  including variation in thickness · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/075

  Electricity · mapped topic

• H01L31/047

  Electricity · mapped topic