Vacuum drying apparatus and method of manufacturing film using the same

Patent metadata

Field	Value
Publication number	US-10052657-B2
Application number	US-201615236805-A
Country	US
Kind code	B2
Filing date	Aug 15, 2016
Priority date	Apr 27, 2016
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

A method of manufacturing a film includes disposing a substrate under one side of a baffle plate in a film manufacturing space, the baffle plate having a plurality of through-holes, and spraying an inert gas toward the substrate through a plurality of nozzle tips branched from a gas distribution pipe that is disposed over an other side of the baffle plate such that the inert gas penetrates the baffle plate through the through-holes.

First claim

What is claimed is:

1. A method of manufacturing a film, the method comprising:
disposing a substrate under one side of a baffle plate in a film manufacturing space, the baffle plate having a plurality of through-holes and baffle slits; and
spraying an inert gas toward the substrate through a plurality of nozzle tips branched from each of a plurality of gas distribution pipes that is disposed over another side of the baffle plate such that the inert gas penetrates the baffle plate through the through-holes, wherein
the plurality of gas distribution pipes extend along the another side of the baffle plate in a first direction, and are adjacently arranged in a second direction crossing the first direction, and wherein
the sprayed inert gas is exhausted through the baffle slits of the baffle plate.

2. The method as claimed in claim 1 , wherein:
the substrate is a base substrate that has an organic material layer thereon, and
spraying the inert gas dries the organic material layer to form the film, the film being an organic film.

3. The method as claimed in claim 1 , further comprising:
reducing a pressure in the film manufacturing space, wherein:
reducing the pressure includes reducing the pressure from a first pressure to a second pressure, the second pressure being lower than the first pressure, for a first period of time, and maintaining the second pressure for second period of time, the second period of time being longer than the first period of time,
spraying the inert gas includes spraying the inert gas for third period of time while reducing a flow rate of the inert gas from a first flow rate to a second flow rate, the second flow rate being lower than the first flow rate, and spraying the inert gas for a fourth period of time, the fourth period of time being longer than the third period of time, while maintaining the second flow rate,
the first period of time overlaps the third period of time, and the second period of time overlaps the fourth period of time, and
beginning of maintaining the second pressure for the second period of time precedes beginning of maintaining the second flow rate of spraying the inert gas for the fourth period of time.

4. The method as claimed in claim 3 , wherein:
reducing the pressure further includes reducing the pressure from the second pressure to a third pressure, the third pressure being lower than the second pressure, after maintaining of second pressure, and
a change rate of pressure per unit time in reducing the pressure from the first pressure to the second pressure is greater than a change rate of pressure per unit time in reducing the pressure from the second pressure to the third pressure.

5. The method as claimed in claim 1 , further comprising:
heating the baffle plate;
heating a heating plate that is located on an opposite side of the substrate from the baffle plate; and
heating a lateral heating plate that is located on a lateral side of a substrate drying space defined between the substrate and the baffle plate,
wherein:
a heating temperature of the heating plate is higher than a heating temperature of the baffle plate,
the heating temperature of the baffle plate is higher than a heating temperature of the lateral heating plate, and
the heating temperature of the baffle plate is 250° C. or higher.

6. The method as claimed in claim 1 , further comprising:
spraying a curtain gas using a curtain gas injection nozzle that surrounds a substrate drying space defined between the substrate and the baffle plate, the curtain gas injection nozzle including injection holes,
wherein a flow rate of the inert gas sprayed through the injection holes of the nozzle tips is 1 to 3 times the flow rate of the curtain gas sprayed through the injection holes of the curtain gas injection nozzle.

7. The method as claimed in claim 1 , wherein:
the inert gas is supplied from a gas supply source through a gas supply pipe connected with the gas supply source, the gas distribution pipes connected with the gas supply pipe, and the plurality of nozzle tips branched from the gas distribution pipes, and
a length of a first flow path extending from a point at which the gas supply pipe is directly connected with each of the gas distribution pipes to one end of each of the gas distribution pipes is equal to a length of a second flow path extending from the point at which the gas supply pipe is directly connected with each of the gas distribution pipes to another end of each of the gas distribution pipes.

8. The method as claimed in claim 7 , wherein:
a number of the gas distribution pipes is 2″, where n is an integer of 1 or more,
different ones of the gas distribution pipes are spaced apart from each other in the second direction, and
the lengths of first and second flow paths from the gas supply source to the gas distribution pipes are equal to each other.

9. The method as claimed in claim 1 , wherein:
the plurality of nozzle tips includes a first nozzle tip located at one end of each of the gas distribution pipes extending in the first direction, and a second nozzle tip located nearer to a center of each of the gas distribution pipes than the first nozzle tip,
each of the first nozzle tip and the second nozzle tip has at least one injection hole that sprays gas, and
a flow rate of the inert gas sprayed through the injection hole of the first nozzle tip is greater than a flow rate of the inert gas sprayed through the injection hole of the second nozzle tip.

10. The method as claimed in claim 1 , wherein:
each of the nozzle tips includes a first injection hole and a second injection hole that spray the inert gas, and
a flow rate of the inert gas sprayed through the first injection hole is different from a flow rate of the inert gas sprayed through the second injection hole.

11. The method as claimed in claim 1 , wherein
each of the nozzle tips includes an injection hole that sprays the inert gas, and
an angle between a gas spraying direction of the injection hole and one side of the substrate is 30° to 45°.

12. A method of manufacturing an organic light-emitting device, the method comprising:
providing a substrate including a base substrate and an organic material layer to form at least one of a hole injection layer, a hole transport layer, and an organic luminescent layer on the base substrate,
disposing the substrate on a substrate mounting plate in a film manufacturing space such that the substrate is spaced apart from and facing a baffle plate, the baffle plate having a plurality of through-holes and a plurality of baffle slits, with nozzle tips penetrating respective ones of the through-holes, the nozzle tips being configured to spray a gas toward the substrate mounting plate and being branched from each of a plurality of gas distribution pipes, the plurality of gas distribution pipes extending along one side of the baffle plate in a first direction, and are adjacently arranged in a second direction crossing the first direction,
positioning the substrate mounting plate with respect to a gas flow blocking frame and a curtain gas injection nozzle such that an isolated substrate drying space is defined between the substrate mounting plate and the baffle plate,
spraying an inert process gas toward the substrate through the nozzle tips such that the organic material layer is dried to form the at least one of a hole injection layer, a hole transport layer, and an organic luminescent layer on the base substrate, wherein
the sprayed inert process gas is exhausted through the baffle slits of the baffle plate.

13. The method as claimed in claim 12 , further including, during spraying the pro

Assignees

• Samsung Display Co Ltd

Inventors

• Kishimoto Katsushi

Classifications

• H01L51/0026

  Electricity · mapped topic

• H01L2227/323

  Electricity · mapped topic

• B05D3/0466

  the gas being a non-reacting gas (B05D3/0406 takes precedence) · CPC title

• B05D1/60 Primary

  Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00) · CPC title

• H01L51/56

  Electricity · mapped topic