Radio frequency field immersed ultra-low temperature electron source

US10051720B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-10051720-B1
Application numberUS-201615205981-A
CountryUS
Kind codeB1
Filing dateJul 8, 2016
Priority dateJul 8, 2015
Publication dateAug 14, 2018
Grant dateAug 14, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed below are representative embodiments of methods, apparatus, and systems for generating electrons. For example, certain embodiments comprise a charge gating diamond QED based electron source, which can be suspended within the RF cavity of an electron injection system in a superconducting radiofrequency (SRF) electron accelerator. Embodiments of the disclosed technology are capable of producing low temperature (cold) electron beams, where “temperature” refers to the transverse energy in the extracted electron beam (or beam emittance). Embodiments of the disclosed technology can also exhibit enhanced charge replenishment capabilities by virtue of the material selected to suspend the electron source within the RF cavity of the electron injection system.

First claim

Opening claim text (preview).

What is claimed is: 1. An electron injection system for a superconducting radiofrequency (SRF) accelerator system, comprising: a liquid-cooled vessel defining a radio frequency (RF) cavity in which an electron source is located; an electron source located within the RF cavity, but not in direct contact with any surface of the RF cavity; one or more support structures that extend from a back wall of the RF cavity and mechanically connect with a back plane of the electron source; and one or more light guides surrounding respective ones of the support structures, the one or more light guides also extending from the back wall of the RF cavity. 2. The system of claim 1 , wherein the electron source is suspended within the RF cavity such that a back plane of the electron source does not make any direct contact with a back wall of the RF cavity. 3. The system of claim 1 , wherein the support structures comprise one or more boron filaments. 4. The system of claim 1 , wherein the support structures comprise one or more filaments having variable semiconductivity. 5. An electron injection system for a superconducting radiofrequency (SRF) accelerator system, comprising: a liquid-cooled vessel defining a radio frequency (RF) cavity in which an electron source is located; an electron source located within the RF cavity, but not in direct contact with any surface of the RF cavity; and one or more light guides configured to transmit photons from a photon source external the RF cavity to a back plane of the electron source, thus causing electron emission from the electron source. 6. The system of claim 5 , wherein the photon source is a UV laser source or a soft x-ray source. 7. The system of claim 5 , wherein the photon source is further configured to transmit photons through the light guides at a time during which a periodic electric field in the RF cavity causes electron beam emission from a front surface of the electron source opposite of the back plane of the electron source. 8. An electron injection system for a superconducting radiofrequency (SRF) accelerator system, comprising: a liquid-cooled vessel defining a radio frequency (RF) cavity in which an electron source is located; and an electron source located within the RF cavity, but not in direct contact with any surface of the RF cavity, wherein the electron source comprises a diamond structure or a diamond QED based electron source. 9. The system of claim 8 , wherein the electron source is a diamond QED based electron source that further comprises: a carbon nanotube structure adjacent to which a diamond structure is located; and a platinum coating at an end of the carbon nanotube structure. 10. The system of claim 1 , wherein the liquid-cooled vessel contains a volume of liquid helium. 11. A method, comprising: suspending an electron source within an injector cavity of a superconducting radiofrequency (SRF) accelerator system such that the electron source is located within an RF cavity, but not in direct contact with any surface of the RF cavity; and selectively transmitting photons to a back plane of the electron source at times synchronized with the periodic RF field generated in the RF cavity, the photons being generated from a light source external to the RF cavity, wherein the selectively transmitting photons is performed by transmitting photons toward the back plane of the electron source through one or more light guides that have respective transmission ends that are located at the back wall of the RF cavity or extend into the RF cavity. 12. The method of claim 11 , wherein the suspending is performed by one or more support structures having selective semiconductivity and wherein the method comprises selectively adjusting the semiconductivity of the support structure in order to alter the electronic replenishment within the RF cavity. 13. A system, comprising: a superconducting radiofrequency (SRF) accelerator system, comprising: a liquid-cooled vessel defining a radio frequency (RF) cavity in which an electron source is located; and a photon-activated electron source located within the RF cavity, the photon-activated electron source being suspended in an interior of the RF cavity distal from an end wall of the RF cavity, wherein the photon-activated electron source is suspended within the RF cavity by one or more support structures comprising one or more filaments having variable semiconductivity. 14. The system of claim 13 , wherein the electron source comprises a diamond QED based electron source.

Assignees

Inventors

Classifications

  • Diamond-like carbon [DLC] · CPC title

  • Semiconductor cathodes, e.g. cathodes with PN junction layers · CPC title

  • Photo-emissive cathodes (H01J1/35 takes precedence) · CPC title

  • H05H7/20Primary

    with superconductive walls · CPC title

  • Electron sources · CPC title

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What does patent US10051720B1 cover?
Disclosed below are representative embodiments of methods, apparatus, and systems for generating electrons. For example, certain embodiments comprise a charge gating diamond QED based electron source, which can be suspended within the RF cavity of an electron injection system in a superconducting radiofrequency (SRF) electron accelerator. Embodiments of the disclosed technology are capable of p…
Who is the assignee on this patent?
Los Alamos Nat Security Llc
What technology area does this patent fall under?
Primary CPC classification H05H7/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 14 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).