Quantum dot light emitting element including water/alcohol soluble conjugated polymer based electron injection/electron transporting layer, manufacturing method thereof and liquid crystal display device

Patent metadata

Field	Value
Publication number	US-10050220-B2
Application number	US-201615033623-A
Country	US
Kind code	B2
Filing date	Feb 18, 2016
Priority date	Jan 25, 2016
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

The present invention provides a quantum dot light emitting element, a manufacture method thereof and a liquid crystal display device. The quantum dot light emitting element comprises a substrate, an anode, a Hole Injection and Hole Transporting Layer, a quantum dot light emitting layer, an Electron Injection and Electron Transporting layer and a cathode, and the anode is located on the substrate, and the anode and the cathode are located at the same side of the substrate, and are opposite and separately located, and the Hole Injection and Hole Transporting Layer, the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer are sequentially sandwiched between the anode and the cathode, and one surface of the Hole Injection and Hole Transporting Layer is connected with the anode, wherein the Electron Injection and Electron Transporting layer comprises water/alcohol soluble conjugated polymer.

First claim

What is claimed is:

1. A quantum dot light emitting element, wherein the quantum dot light emitting element comprises a substrate, an anode, a Hole Injection and Hole Transporting Layer, a quantum dot light emitting layer, an Electron Injection and Electron Transporting layer and a cathode, and the anode is located on the substrate, and the anode and the cathode are located at the same side of the substrate, and the anode and the cathode are opposite and separately located, and the Hole Injection and Hole Transporting Layer, the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer are sandwiched between the anode and the cathode, and one surface of the Hole Injection and Hole Transporting Layer is connected with the anode, and the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer sequentially stack up at one surface of the Hole Injection and Hole Transporting Layer away from the anode, and one surface of the Electron Injection and Electron Transporting layer away from the quantum dot light emitting layer is connected with the cathode, and the anode is employed to provide holes, and the cathode is employed to provide electrons, and the Hole Injection and Hole Transporting Layer is employed to transport the holes to the quantum dot light emitting layer, and the Electron Injection and Electron Transporting layer is employed to transport the electrons to the quantum dot light emitting layer, and the holes and the electrons recombine in the quantum dot light emitting layer to emit light, wherein the Electron Injection and Electron Transporting layer comprises water/alcohol soluble conjugated polymer;
wherein the water/alcohol soluble conjugated polymer comprises one of PFNBr (Bromine Polyfluorene) and PFNSO (Sulfo-Polyfluorene).

2. The quantum dot light emitting element according to claim 1 , wherein the anode comprises Indium Tin Oxide.

3. The quantum dot light emitting element according to claim 1 , wherein the Hole Injection and Hole Transporting Layer comprises PEDOT:PSS or P type metal oxide nano particles, wherein the P type metal oxide nano particle comprises any one or more of MoO3, NiO, V2O5 and WoO3.

4. The quantum dot light emitting element according to claim 1 , wherein a thickness of the Hole Injection and Hole Transporting Layer is 10-15 nm.

5. The quantum dot light emitting element according to claim 1 , wherein a thickness of the quantum dot light emitting layer is 30-40 nm.

6. The quantum dot light emitting element according to claim 1 , wherein the quantum dot light emitting layer comprises a single layer or more layers of quantum dots.

7. The quantum dot light emitting element according to claim 1 , wherein the cathode comprises Aluminum, and a thickness of the cathode is 100-150 nm.

8. A manufacture method of a quantum dot light emitting element, wherein the manufacture method of the quantum dot light emitting element comprises:
providing a substrate;
forming a cathode on a surface of the substrate;
coating Hole Injection and Hole Transporting material on a surface of an anode away from the substrate to form a Hole Injection and Hole Transporting layer;
coating quantum dot light emitting material on a surface of the Hole Injection and Hole Transporting layer away from the anode to form a quantum dot light emitting layer;
coating Electron Injection and Electron Transporting material on a surface of the quantum dot light emitting layer away from the Hole Injection and Hole Transporting layer to form an Electron Injection and Electron Transporting layer, wherein the Electron Injection and Electron Transporting layer comprises water/alcohol soluble conjugated polymer;
depositing metal on a surface of the Electron Injection and Electron Transporting layer away from the quantum dot light emitting layer to form the cathode;
wherein the water/alcohol soluble conjugated polymer comprises one of PFNBr (Bromine Polyfluorene) and PFNSO (Sulfo-Polyfluorene).

9. A liquid crystal display device, wherein the liquid crystal display device comprises a quantum dot light emitting element, and the quantum dot light emitting element comprises a substrate, an anode, a Hole Injection and Hole Transporting Layer, a quantum dot light emitting layer, an Electron Injection and Electron Transporting layer and a cathode, and the anode is located on the substrate, and the anode and the cathode are located at the same side of the substrate, and the anode and the cathode are opposite and separately located, and the Hole Injection and Hole Transporting Layer, the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer are sandwiched between the anode and the cathode, and one surface of the Hole Injection and Hole Transporting Layer is connected with the anode, and the quantum dot light emitting layer and the Electron Injection and Electron Transporting layer sequentially stack up at one surface of the Hole Injection and Hole Transporting Layer away from the anode, and one surface of the Electron Injection and Electron Transporting layer away from the quantum dot light emitting layer is connected with the cathode, and the anode is employed to provide holes, and the cathode is employed to provide electrons, and the Hole Injection and Hole Transporting Layer is employed to transport the holes to the quantum dot light emitting layer, and the Electron Injection and Electron Transporting layer is employed to transport the electrons to the quantum dot light emitting layer, and the holes and the electrons recombine in the quantum dot light emitting layer to emit light, wherein the Electron Injection and Electron Transporting layer comprises water/alcohol soluble conjugated polymer;
wherein the water/alcohol soluble conjugated polymer comprises one of PFNBr (Bromine Polyfluorene) and PFNSO (Sulfo-Polyfluorene).

10. The liquid crystal display device according to claim 9 , wherein the anode comprises Indium Tin Oxide.

11. The liquid crystal display device according to claim 9 , wherein the Hole Injection and Hole Transporting Layer comprises PEDOT:PSS or P type metal oxide nano particles, wherein the P type metal oxide nano particle comprises any one or more of MoO3, NiO, V2O5 and WoO3.

12. The liquid crystal display device according to claim 9 , wherein a thickness of the Hole Injection and Hole Transporting Layer is 10-15 nm.

13. The liquid crystal display device according to claim 9 , wherein a thickness of the quantum dot light emitting layer is 30-40 nm.

14. The liquid crystal display device according to claim 9 , wherein the quantum dot light emitting layer comprises a single layer or more layers of quantum dots.

15. The liquid crystal display device according to claim 9 , wherein the cathode comprises Aluminum, and a thickness of the cathode is 100-150 nm.

Assignees

• Shenzhen China Star Optoelect
• Shenzhen China Star Optoelect

Inventors

• Xu Chao

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• G02F2202/36

  Micro- or nanomaterials · CPC title

• G02F1/1333

  Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence) · CPC title

• H01L33/06

  Electricity · mapped topic

• H01L49/006

  Electricity · mapped topic