Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10050056-B2
Application number	US-201715821435-A
Country	US
Kind code	B2
Filing date	Nov 22, 2017
Priority date	May 4, 2016
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

Provided herein is a semiconductor device including: a channel layer; a data storage layer surrounding the channel layer and extending along the channel layer; interlayer insulating layers surrounding the data storage layer and stacked along the channel layer, wherein the interlayer insulating layers are spaced apart from each other, wherein a conductive area is disposed between the interlayer insulating layers; a conductive pattern disposed in the conductive area and surrounding the data storage layer; buffer patterns disposed between the interlayer insulating layers and the data storage layer and surrounding the data storage layer, wherein each of the buffer patterns includes a densified area, wherein the buffer patterns are separated from each other by the conductive area; and a blocking insulating pattern disposed between the conductive pattern and the data storage layer and surrounding the data storage layer.

First claim

What is claimed is:

1. A manufacturing method for a semiconductor device, comprising:
alternately stacking first layers and second layers;
forming a hole passing through the first layers and the second layers;
forming a buffer layer over a sidewall of the hole;
curing dangling bonds in the buffer layer to form a first densified area in the buffer layer;
forming a data storage layer over the first densified area; and
forming a channel layer over the data storage layer,
wherein curing is controlled such that a non-densified area is defined in the buffer layer between the first densified area and the sidewall of the hole.

Assignees

• Sk Hynix Inc

Inventors

• Park In Su
• Lee Ki Hong
• Cheon Hye Jeong

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6516

  of treatments performed after formation of the materials · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H01L21/0228

  Electricity · mapped topic

• H01L21/02164

  Electricity · mapped topic