Semiconductor device

Patent metadata

Field	Value
Publication number	US-10049968-B2
Application number	US-201715858493-A
Country	US
Kind code	B2
Filing date	Dec 29, 2017
Priority date	Jul 31, 2015
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

To improve the reliability of a semiconductor device. A chip mounting portion TAB 5 is arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP 1 (LV) and a pad of a semiconductor chip CHP 3 are electrically coupled by a wire W 1 a and a wire W 1 b through a relay lead RL 1 . Likewise, a gate electrode pad of a semiconductor chip CHP 1 (LW) and the pad of the semiconductor chip CHP 3 are electrically coupled by a wire W 1 c and a wire W 1 d through a relay lead RL 2 . At this time, the structures of parts of the relay leads RL 1 and RL 2 , which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LD 1 and LD 2 which function as external terminals.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first semiconductor chip provided with a first power transistor and having a first surface over which a first control pad electrically coupled to a first control electrode of the first power transistor is arranged;
a second semiconductor chip provided with a second power transistor and having a second surface over which a second control pad electrically coupled to a second control electrode of the second power transistor is arranged;
a control semiconductor chip provided with a control circuit controlling the first control electrode of the first power transistor of the first semiconductor chip and the second control electrode of the second power transistor of the second semiconductor chip, and having a surface over which a first electrode pad and a second electrode pad electrically coupled to the control circuit is arranged;
a plurality of first leads electrically coupled to the control semiconductor chip;
a plurality of second leads electrically coupled to the first semiconductor chip;
a first relay lead electrically coupled to the first semiconductor chip and the control semiconductor chip; and
a sealing body including a first surface having a first side, a second side opposite to the first side, and a third side extending in a direction intersecting with the first side and the second side, and a second surface being a surface located on the side opposite to the first surface, the sealing body sealing the first semiconductor chip, the control semiconductor chip, respective parts of the first leads, respective parts of the second leads, and a part of the first relay lead,
wherein the first control pad of the first semiconductor chip and the first electrode pad of the control semiconductor chip are electrically coupled by a first conductive member through the first relay lead to each other,
wherein the second control pad of the second semiconductor chip and the second electrode pad of the control semiconductor chip are directly, electrically coupled by a wire, and
wherein a structure of a part of the first relay lead, which is exposed from the sealing body, is different from structures of respective parts of the first leads and the second leads, which are exposed from the sealing body.

2. The semiconductor device according to claim 1 ,
wherein when viewed from the first surface side of the sealing body, the first leads are arranged along the first side of the sealing body,
wherein when viewed from the first surface side of the sealing body, the second leads are arranged along the second side of the sealing body, and
wherein when viewed from the first surface side of the sealing body, the first relay lead is arranged over the third side of the sealing body and extends to the inside of the sealing body.

3. The semiconductor device according to claim 2 , wherein when viewed from the first surface side of the sealing body, the first relay lead is closer to the first side than the second side of the sealing body.

4. The semiconductor device according to claim 2 , wherein the first relay lead has a bent portion.

5. The semiconductor device according to claim 2 , further comprising:
a third semiconductor chip provided with a third power transistor and having a third surface over which a third control pad electrically coupled to a third control electrode of the third power transistor is arranged; and
a second relay lead electrically coupled to the third semiconductor chip and the control semiconductor chip,
wherein a third electrode pad electrically coupled to the control circuit is arranged over the surface of the control semiconductor chip,
wherein the third control pad of the third semiconductor chip and the third electrode pad of the control semiconductor chip are electrically coupled by a second conductive member through the second relay lead to each other, and
wherein a structure of a part of the second relay lead, which is exposed from the sealing body is different from the structures of the respective parts of the first leads and the second leads, which are exposed from the sealing body.

6. The semiconductor device according to claim 5 ,
wherein the first surface of the sealing body has a fourth side opposite to the third side, and
wherein when viewed from the first surface side of the sealing body, the second relay lead is arranged over the fourth side of the sealing body and extends to the inside of the sealing body.

7. The semiconductor device according to claim 1 , wherein a length of a part of the first relay lead, which protrudes from the sealing body is shorter than a length of each of parts of the first leads and the second leads, which protrude from the sealing body.

8. The semiconductor device according to claim 1 ,
wherein the first conductive member has a first wire and a second wire,
wherein one end of the first wire is electrically coupled to the first electrode pad of the control semiconductor chip,
wherein another end of the first wire located on the side opposite to the one end of the first wire is electrically coupled to the first relay lead,
wherein one end of the second wire is electrically coupled to the first relay lead, and
wherein another end of the second wire located on the side opposite to the one end of the second wire is electrically coupled to the first control pad of the first semiconductor chip.

9. The semiconductor device according to claim 1 , wherein a distance from the first semiconductor chip to the control semiconductor chip is greater than a distance from the second semiconductor chip to the control semiconductor chip.

10. A semiconductor device comprising:
a first semiconductor chip provided with a first power transistor and having a first surface over which a first control pad electrically coupled to a first control electrode of the first power transistor is arranged;
a control semiconductor chip provided with a control circuit controlling the first control electrode of the first power transistor of the first semiconductor chip and having a surface over which a first electrode pad electrically coupled to the control circuit is arranged;
a plurality of first leads electrically coupled to the control semiconductor chip;
a plurality of second leads electrically coupled to the first semiconductor chip;
a first relay lead electrically coupled to the first semiconductor chip and the control semiconductor chip; and
a sealing body including a first surface having a first side, a second side opposite to the first side, and a third side extending in a direction intersecting with the first side and the second side, and a second surface being a surface located on the side opposite to the first surface, the sealing body sealing the first semiconductor chip, the control semiconductor chip, respective parts of the first leads, respective parts of the second leads, and a part of the first relay lead,
wherein the first control pad of the first semiconductor chip and the first electrode pad of the control semiconductor chip are electrically coupled by a first conductive member through the first relay lead to each other,
wherein a structure of a part of the first relay lead, which is exposed from the sealing body is different from structures of respective parts of the first leads and the second leads, which are exposed from the sealing body,
wherein the first surface of the first semiconductor chip further has a first chip mounting portion over which the first semiconductor chip is mounted so as to be opposite to the first surface of the sealing body, and
wherein when the semiconductor device is mounted over a mounting board, the first surface of the sealing body is a surface opposite to a surface

Assignees

• Renesas Electronics Corp

Inventors

• Sato Yukihiro
• Muto Akira
• Kanda Ryo
• Kanazawa Takamitsu

Classifications

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title

• H10W72/5475

  multiple bond wires connected to common bond pads at both ends of the wires · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title