Quantum dot color filter substrate and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10048412-B2
Application number	US-201514915890-A
Country	US
Kind code	B2
Filing date	Dec 28, 2015
Priority date	Nov 13, 2015
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses high power UV light irradiation on the QD material in the QD gel for prolonged period of time to perform selective quenching to obtain a selectively quenched QD layer, i.e., patterning the QD layer without etching process, achieve simplifying the QD CF substrate manufacturing process and reduce production cost. The QD CF substrate uses selectively quenched QD layer obtain by UV light irradiation technology to achieve improve the color gamut of display as well as simplifying manufacturing process. Moreover, the QD layer comprises no blue QD material, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency as well as reduce material cost.

First claim

What is claimed is:

1. A manufacturing method for quantum dot (QD) color filter (CF) substrate, which comprises:
Step 1 : providing a substrate, the substrate comprising: red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
Step 2 : forming a patterned red color-resist layer and a green color-resist layer, and an organic transparent color-resist layer respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas of the substrate to obtain a CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer;
Step 3 : coating a layer of QD gel on the CF substrate, and curing the QD gel;
the QD gel being a heat-curing gel comprising therein a red QD material and a green QD material; and
Step 4 : providing a mask, the mask comprising an opaque portion corresponding to the red and green sub-pixel areas, and a transparent portion corresponding to the blue sub-pixel areas; using ultraviolet (UV) light to perform irradiation on the portion of the mask corresponding to blue sub-pixel areas for 3-40 hours, so that the irreversible fluorescence quenching occurring for the QD material in the QD gel located on the blue sub-pixel areas under long time UV light irradiation, and the QD material in the QD gel located on red sub-pixel areas and green sub-pixel areas not affected by the UV light due to shielding from the mask, thus, obtaining a selectively quenched QD layer; so as to obtain a QD CF film comprising the substrate, the CF film, and the QD layer; the QD layer comprising: a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;
the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light; and the QD material in the second QD layer not emitting light when excited.

2. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein in Step 3 , the coating thickness of the QD gel on the CF layer is 0.5-20 um.

3. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein the QD material in the QD gel is one or more of the II-VI group QD material and I-III-VI group QD material.

4. The manufacturing method for QD CF substrate as claimed in claim 3 , wherein the QD material in the QD gel is one or more of ZnCdSe 2 , CdSe, CdTe, CuInS 2 , and ZnCuInS 3 .

5. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein the QD CF substrate is used to a display using blue backlight.

6. A quantum dot (QD) color filter (CF) substrate, which comprises: a substrate, a CF layer disposed on the substrate, and a QD layer disposed on the CF layer;
the substrate comprising: red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas; the CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer disposed respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
the QD layer comprising: a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;
the QD layer being formed by QD gel, and the QD gel being obtained by mixing and curing a gel with a red QD material and a green QD material; the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light; irreversible fluorescence quenching occurring for the QD material in the second QD layer under long time UV light irradiation for 3-40 hours, and the QD material in the second QD layer not emitting light when excited;
the QD CF substrate being used to a display using blue backlight.

7. The QD CF substrate as claimed in claim 6 , wherein the display is an liquid crystal display (LCD), an organic light-emitting diode (OLED) display, or a quantum dot light-emitting diode (QLED) display.

8. The QD CF substrate as claimed in claim 6 , wherein the thickness of the QD layer is 0.5-20 um.

9. The QD CF substrate as claimed in claim 6 , wherein the QD material in the QD gel is one or more of the II-VI group QD material I-III-VI and group QD material.

10. The QD CF substrate as claimed in claim 9 , wherein the QD material in the QD gel is one or more of ZnCdSe 2 , CdSe, CdTe, CuInS 2 , and ZnCuInS 3 .

11. A quantum dot (QD) color filter (CF) substrate, which comprises: a substrate, a CF layer disposed on the substrate, and a QD layer disposed on the CF layer;
the substrate comprising: red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas; the CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer disposed respectively on the corresponding red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
the QD layer comprising: a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas;
the QD layer being formed by QD gel, and the QD gel being obtained by mixing and curing a gel with a red QD material and a green QD material; the red QD material and the green QD material in the first QD layer emitting red and green light respectively under the excitement by blue light; irreversible fluorescence quenching occurring for the QD material in the second QD layer under long time UV light irradiation for 3-40 hours, and the QD material in the second QD layer not emitting light when excited;
the QD CF substrate being used to a display using blue backlight;
wherein the display is an liquid crystal display (LCD), an organic light-emitting diode (OLED) display, or a quantum dot light-emitting diode (QLED) display;
wherein the thickness of the QD layer is 0.5-20 um;
wherein the QD material in the QD gel is one or more of the II-VI group QD material and I-III-VI group QD material;
wherein the QD material in the QD gel is one or more of ZnCdSe 2 , CdSe, CdTe, CuInS 2 , and ZnCuInS 3 .

Assignees

• Shenzhen China Star Optoelect
• Sehnzhen China Star Optoelectronics Tech Co Ltd

Inventors

• Li Dongze

Classifications

• G02F1/133514

  Colour filters · CPC title

• G02B5/206

  comprising particles embedded in a solid matrix · CPC title

• G02F1/133621

  providing coloured light (G02F1/133617, G02F1/133533 take precedence) · CPC title

• G02F1/133512 Primary

  Light shielding layers, e.g. black matrix (G02F1/136209 takes precedence) · CPC title

• G03F7/0007

  Filters, e.g. additive colour filters; Components for display devices · CPC title